NTE2902
N-Channel Silicon Junction
Field Effect Transistor
Description:
The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier
applications.
Absolute Maximum Ratings:
(Note 1)
Drain-Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate-Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Forward Gate Current, I
GF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
°
to +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
°
to +150°C
Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress values (not normal operating conditions) and are not
valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
-25
-
-
-2.0
24
-
Typ
-
-
-
-
-
-
Max
-
-1.0
-1.0
-6.5
60
1.0
Unit
V
nA
μA
V
mA
V
OFF Characteristics
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
V
(BR)GSS
I
G
= 1.0μA, V
DS
= 0
I
GSS
V
GS(off)
I
DSS
V
GS(f)
V
GS
= 15V,
V
DS
= 0
T
A
= +25°C
T
A
= +125°C
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0, Note 2
V
DS
= 0, I
G
= 1mA
ON Characteristics
Zero-Gate Voltage Drain Current
Gate-Source Forward Voltage
Note 2. Pulse test: Pulse Width
≤
300μs, Duty Cycle
≤
3%.
Electrical Characteristics (Cont'd):
(T
A
= +25°C unless otherwise specified)
Parameter
Symbol
Re(y
is
)
Re(y
os
)
g
os
G
pg
Re(y
fs
)
g
fs
Re(y
ig
)
g
fg
g
og
C
gd
C
gs
e
n
V
DS
= 0, V
GS
= -10V,
f = 1MHz
Test Conditions
f = 100MHz
f = 100MHz
f = 1kHz
f = 100MHz
f = 100MHz
f = 1kHz
f = 100MHz
V
DS
= 10V, I
D
= 10mA,
f = 1kHz
Min
-
-
-
-
-
8000
-
-
-
-
-
-
Typ
0.5
0.25
-
16
12
-
12
150
150
1.8
4.3
10
Max
-
-
250
-
-
-
-
-
2.5
5.0
-
Unit
mmhos
mmhos
μmhos
dB
mmhos
mmhos
μmhos
μmhos
pF
pF
nV/√Hz
Small-Signal Characteristics
Common- Source Input Conductance
Common-Source Output
Conductance
Common-Gate Power Gain
Common-Source Forward
Transconductance
Common-Gate Input Conductance
Common-Gate Forward
Transconductance
Common-Gate Output Conductance
Gate-Drain Capacitance
Gate-Source Capacitance
V
DS
= 10V,
I
D
= 10mA
18000
μmhos
Functional Characteristics
Equivalent Short-Circuit Input
Noise Voltage
V
DS
= 10V, I
D
= 10mA,
f = 100Hz
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
G S D
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
PCB设计
