NTGD3149C
Complementary, 20 V, +3.5/−2.7 A,
TSOP−6 Dual
Features
Power MOSFET
•
•
•
•
•
•
Complementary N−Channel and P−Channel MOSFET
Small Size (3 x 3 mm) Dual TSOP−6 Package
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
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V
(BR)DSS
N−Ch
20 V
P−Ch
−20
V
R
DS(on)
MAX
60 mW @ 4.5 V
90 mW @ 2.5 V
110 mW @ 4.5 V
145 mW @ 2.5 V
I
D
MAX
(Note 1)
3.5 A
Applications
−2.7
A
•
DC−DC Conversion Circuits
•
Load/Power Switching with Level Shift
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain
Current
(N−Ch & P−Ch)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
, T
STG
I
S
T
L
I
D
Steady
State
t
≤
5s
Steady
State
t
≤
5s
Steady State
t
≤
5s
N−Ch
P−Ch
Symbol
V
DSS
V
GS
I
D
Value
20
±8
3.2
2.3
3.5
2.4
1.7
2.7
0.9
1.1
11
8.0
−55
to
150
0.8
260
°C
A
°C
A
W
A
Unit
V
V
A
D1
S2
G1
S1
N−CHANNEL MOSFET
G2
D2
P−CHANNEL MOSFET
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 13
CC MG
G
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
CC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
Symbol
R
qJA
R
qJA
Value
140
110
Unit
°C/W
°C/W
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t
≤
5 s (Note 1)
G1
S2
G2
1
2
3
6 D1
5 S1
4 D2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
May, 2008
−
Rev. 0
1
Publication Order Number:
NTGD3149C/D
NTGD3149C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
N
P
N
P
N
P
N
P
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
GS(TH)
R
DS(on)
N
P
N
P
N
P
N
P
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
C
ISS
C
OSS
C
RSS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
P
V
GS
=
−4.5
V, V
DS
=
−10
V, I
D
=
−1.0
A
R
G
= 6
W
N
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.0 A
R
G
= 6
W
P
N
f = 1 MHz, V
GS
= 0 V
V
DS
=
−10
V
V
DS
= 10 V
387
73
43
509
76
40
4.6
0.3
0.7
1.2
5.2
0.4
1.0
1.2
5.5
nC
5.5
pF
g
FS
N
P
V
GS
= V
DS
I
D
= 250
mA
I
D
=
−250
mA
0.4
−0.4
41
83
51
104
67
143
4.7
5.1
1.0
−1.0
60
110
90
145
150
220
S
mW
V
I
GSS
N
P
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
=
−16
V
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
=
−16
V
T
J
= 25
°C
T
J
= 85
°C
V
GS
= 0 V
I
D
= 250
mA
I
D
=
−250
mA
20
−20
1.1
1.1
1.0
−1.0
10
−10
±100
±100
nA
mA
mV/°C
V
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±8
V
V
DS
= 0 V, V
GS
=
±8
V
V
GS
= 4.5 V , I
D
= 3.5 A
V
GS
=
−4.5
V , I
D
=
−2.7
A
V
GS
= 2.5 V , I
D
= 2.9 A
V
GS
=
−2.5
V , I
D
=
−2.4
A
V
GS
= 1.8 V , I
D
= 2.2 A
V
GS
=
−1.8
V , I
D
=
−1.9
A
V
DS
= 10 V , I
D
= 3.5 A
V
DS
=
−10
V , I
D
=
−2.7
A
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NTGD3149C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Symbol
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
t
RR
t
a
t
b
Q
RR
P
V
GS
= 0 V, dI
S
/ dt = 100 A/ms
N
V
GS
= 0 V, dI
S
/ dt = 100 A/ms
N
P
I
S
= 0.8 A
I
S
=
−0.8
A
P
V
GS
=
−4.5
V, V
DD
=
−10
V,
I
D
=
−1.0
A, R
G
= 6.0
W
N
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 1.0 A, R
G
= 6.0
W
N/P
Test Conditions
Min
Typ
6.5
3.8
16.4
2.4
7.0
5.3
33.3
29.5
0.7
−0.7
7.7
4.5
3.2
1.9
11.4
7.5
3.9
4.7
nC
nC
ns
1.2
−1.2
ns
V
Max
Unit
ns
SWITCHING CHARACTERISTICS
(Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
V
GS
= 0 V, T
J
= 25
°C
2. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTGD3149CT1G
Package
TSOP6
(Pb−Free)
Shipping
†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTGD3149C
TYPICAL CHARACTERISTICS (N−CHANNEL)
6.0
I
D
, DRAIN CURRENT (A)
5.0
4.0
3.0
2.0
1.0
0
0
0.5
1.0
1.5
2.0
1.4 V
4.5 V
2.2 V
1.8 V
6.0
2.5 V
1.6 V
I
D
, DRAIN CURRENT (A)
2.0 V
5.0
4.0
3.0
T
J
= 125°C
2.0
T
J
= 25°C
1.0
0
T
J
=
−55°C
0
0.5
1.0
1.5
2.0
2.5
V
DS
≥
10 V
V
GS
= 1.2 V
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. Nch On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.0
Figure 2. Nch Transfer Characteristics
0.38
0.34
0.30
0.26
0.22
0.18
0.14
0.10
0.06
0.02
1.0
2.0
3.0
4.0
5.0
6.0
I
D
= 3.5 A
T = 25°C
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
2.0
3.0
4.0
5.0
6.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. Nch On−Resistance vs. Gate Voltage
1.5
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
2.0
I
D
= 3.5 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
1000
10,000
Figure 4. Nch On−Resistance vs. Drain
Current and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
4.0
6.0
8.0
10
12
14
16
18
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Nch On−Resistance Variation with
Temperature
Figure 6. Nch Drain−to−Source Leakage
Current vs. Voltage
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4
NTGD3149C
TYPICAL CHARACTERISTICS (N−CHANNEL)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
600
550
500
C, CAPACITANCE (pF)
450
400
350
300
250
200
150
100
50
0
C
oss
C
rss
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
iss
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
2.0
3.0
Q1
Q2
I
D
= 3.5 A
T
J
= 25°C
4.0
5.0
V
GS
= 0 V
T
J
= 25°C
QT
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Nch Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
V
DD
= 10 V
I
D
= 3.5 A
V
GS
= 4.5 V
t, TIME (ns)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Figure 8. Nch Gate−to−Source Voltage vs.
Total Charge
V
GS
= 0 V
T
J
= 25°C
t
d(off)
10
t
d(on)
t
r
1.0
t
f
1.0
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Nch Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Nch Diode Forward Voltage vs.
Current
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