NTHS5445T1
Power MOSFET
P−Channel ChipFETE
5.2 Amps, 8 Volts
Features
•
Low R
DS(on)
for Higher Efficiency
•
Logic Level Gate Drive
•
Miniature ChipFET Surface Mount Package Saves Board Space
Applications
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•
Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
5.2 AMPS
8 VOLTS
R
DS(on)
= 35 mW
S
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
(T
J
= 150°C) (Note 1.)
T
A
= 25°C
T
A
= 85°C
Pulsed Drain Current
Continuous Source Current
(Note 1.)
Maximum Power Dissipation
(Note 1.)
T
A
= 25°C
T
A
= 85°C
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
"7.1
"5.2
I
DM
I
S
P
D
2.5
1.3
T
J
, T
stg
1.3
0.7
°C
−2.1
"20
−1.1
"5.2
"3.7
A
A
W
5 secs
Steady
State
G
Unit
V
V
A
D
P−Channel MOSFET
−8.0
"8.0
ChipFET
CASE 1206A
STYLE 1
−55
to +150
1. Surface Mounted on 1″ x 1″ FR4 Board.
PIN CONNECTIONS
D
D
D
S
8
7
6
5
1
2
3
4
MARKING
DIAGRAM
1
2
3
4
A5
8
7
6
5
D
D
D
G
A5 = Specific Device Code
ORDERING INFORMATION
Device
NTHS5445T1
Package
ChipFET
Shipping
3000/Tape & Reel
©
Semiconductor Components Industries, LLC, 2005
February, 2005
−
Rev. XXX
1
Publication Order Number:
NTHS5445T1/D
NTHS5445T1
THERMAL CHARACTERISTICS
Characteristic
Maximum Junction−to−Ambient (Note 2.)
t
v
5 sec
Steady State
Maximum Junction−to−Foot (Drain)
Steady State
Symbol
R
thJA
Typ
40
80
15
Max
50
95
20
Unit
°C/W
R
thJF
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Static
Gate Threshold Voltage
Gate−Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
=
−250
µA
V
DS
= 0 V, V
GS
=
"8.0
V
V
DS
=
−6.4
V, V
GS
= 0 V
V
DS
=
−6.4
V, V
GS
= 0 V,
T
J
= 85°C
On−State Drain Current (Note 3.)
Drain−Source On−State Resistance (Note 3.)
I
D(on)
r
DS(on)
( )
V
DS
v
−5.0
V, V
GS
=
−4.5
V
V
GS
=
−4.5
V, I
D
=
−5.2
A
V
GS
=
−2.5
V, I
D
=
−4.5
A
V
GS
=
−1.8
V, I
D
=
−2.0
A
Forward Transconductance (Note 3.)
Diode Forward Voltage (Note 3.)
Dynamic
(Note 4.)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Source−Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1.1
A, di/dt = 100 A/µs
V
DD
=
−4.0
V, R
L
= 4
Ω
I
D
^
−1.0
A V
GEN
=
−4.5
V
1 0 A,
4 5 V,
R
G
= 6
Ω
−
V
DS
=
−4.0
V V
GS
=
−4.5
V
4 0 V,
4 5 V,
I
D
=
−5.2
A
−
−
−
−
−
−
−
17
2.8
2.6
15
45
110
65
30
26
−
−
25
70
165
100
60
ns
nC
g
fs
V
SD
V
DS
=
−5.0
V, I
D
=
−5.2
A
I
S
=
−1.1
A, V
GS
= 0 V
−0.45
−
−
−
−20
−
−
−
−
−
−
−
−
−
−
0.030
0.040
0.052
18
−0.8
−
"100
−1.0
−5.0
−
0.035
0.047
0.062
−
−1.2
S
V
A
Ω
V
nA
µA
Symbol
Test Condition
Min
Typ
Max
Unit
2. Surface Mounted on 1″ x 1″ FR4 Board.
3. Pulse Test: Pulse Width
v
300
µs,
Duty Cycle
v
2%.
4. Guaranteed by design, not subject to production testing.
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2
NTHS5445T1
TYPICAL ELECTRICAL CHARACTERISTICS
20
V
GS
= 5 thru 2.5 V
16
ID,Drain Current (A)
ID,Drain Current (A)
2V
16
20
T
C
=
−55°C
25°C
125°C
12
8
1.5 V
4
0
1V
0
0.5
1.0
1.5
2.0
2.5
V
DS
, Drain−to−Source Voltage (V)
3.0
12
8
4
0
0
0.5
1.0
1.5
2.0
V
GS
, Gate−to−Source Voltage (V)
2.5
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.10
r DS(on),On−Resistance (
Ω )
0.08
0.06
V
GS
= 2.5 V
0.04
0.02
0
V
GS
= 4.5 V
V
GS
= 1.8 V
C, Capacitance (pF)
3000
2500
2000
1500
1000
500
0
C
oss
C
iss
C
rss
0
2
4
6
V
DS
, Drain−to−Source Voltage (V)
8
0
4
8
12
I
D
, Drain Current (A)
16
20
Figure 3. On−Resistance vs. Drain Current
Figure 4. Capacitance
5
VGS,Gate−to−Source Voltage (V)
r DS(on),On−Resistance (
Ω )
(Normalized)
V
DS
= 4 V
I
D
= 5.2 A
1.6
1.4
1.2
1.0
0.8
0.6
−50
V
GS
= 4.5 V
I
D
= 5.2 A
4
3
2
1
0
0
4
8
12
Q
g,
Total Gate Charge (nC)
16
20
−25
0
25
50
75
100
T
J
, Junction Temperature (°C)
125
150
Figure 5. Gate Charge
Figure 6. On−Resistance vs. Junction
Temperature
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3
NTHS5445T1
TYPICAL ELECTRICAL CHARACTERISTICS
20
rDS(on),
On−Resistance (
Ω )
T
J
= 150°C
I S,
Source Current (A)
10
0.10
0.08
0.06
0.04
0.02
I
D
= 5.2 A
T
J
= 25°C
1
0
0.2
0.4
0.6
0.8
1.0
V
DS
, Drain−to−Source Voltage (V)
1.2
0
0
1
2
3
4
V
GS
, Gate−to−Source Voltage (V)
5
Figure 7. Source−Drain Diode Forward Voltage
Figure 8. On−Resistance vs. Gate−to−Source
Voltage
50
40
Power (W)
30
20
10
0
10
−3
0.4
0.3
V GS (th),
Varience (V)
0.2
0.1
I
D
= 250
µA
0.0
−0.1
−0.2
−50
−25
0
25
50
75
100
T
J
, Temperature (°C)
125
150
10
−2
10
−1
1
Time (sec)
10
100
600
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
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NTHS5445T1
TYPICAL ELECTRICAL CHARACTERISTICS
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
Notes:
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
PDM
t1
t2
t1
1. Duty Cycle, D = t
2
2. Per Unit Base = R
thJA
= 80°C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Foot
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5
stm32/stm8
