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SO
T6
NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
66
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel)
and 1 kV (P-channel)
AEC-Q101 qualified
1.3 Applications
Level shifter
Power supply converter
Load switch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 500 mA;
pulsed; t
p
≤
300 µs;
δ ≤
0.01 ; T
j
= 25 °C
V
GS
= -10 V; I
D
= -100 mA;
T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
V
GS
= -10 V; T
amb
= 25 °C
T
j
= 25 °C
[1]
Min
-
-20
-
-
-20
-
-
Typ
-
-
-
-
-
-
1
Max Unit
-50
20
V
V
TR2 (P-channel)
-170 mA
60
20
330
1.6
V
V
mA
Ω
TR1 (N-channel)
TR1 (N-channel), Static characteristics
TR2 (P-channel), Static characteristics
R
DSon
drain-source on-state
resistance
-
4.5
7.5
Ω
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
NXP Semiconductors
NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
1
2
3
S1
S2
G1
G2
Simplified outline
6
5
4
Graphic symbol
D1
D2
SOT666 (SOT666)
017aaa262
3. Ordering information
Table 3.
Ordering information
Package
Name
NX1029X
SOT666
Description
plastic surface-mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
NX1029X
[1]
% = placeholder for manufacturing site code.
Marking codes
Marking code
[1]
AD
Type number
NX1029X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
2 of 20
NXP Semiconductors
NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
TR1 (N-channel)
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
Per device
P
tot
T
j
T
amb
T
stg
I
S
I
S
V
ESD
V
ESD
[1]
[2]
[3]
[2]
[1]
[1]
[1]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-20
-
-
-
-
-
-
[2]
Max
-50
20
-170
-110
-0.7
330
390
1090
60
20
330
210
1.2
330
390
1090
500
150
150
150
330
-170
2000
1000
Unit
V
V
mA
mA
A
mW
mW
mW
V
V
mA
mA
A
mW
mW
mW
mW
°C
°C
°C
mA
mA
V
V
TR2 (P-channel)
T
j
= 25 °C
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
source current
electrostatic discharge voltage
electrostatic discharge voltage
T
amb
= 25 °C
-
-55
-55
-65
TR1 (N-channel), Source-drain diode
T
amb
= 25 °C
T
amb
= 25 °C
HBM
HBM
[2][1]
-
-
-
-
TR2 (P-channel), Source-drain diode
[1]
TR1 N-channel), ESD maximum rating
[3]
TR2 (P-channel), ESD maximum rating
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Measured between all pins.
NX1029X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
3 of 20
NXP Semiconductors
NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
120
P
der
(%)
80
001aao121
120
I
der
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
T
j
(°C)
175
0
-75
-25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
10
Fig 2.
Normalized continuous drain current as a
function of junction temperature
017aaa059
I
D
(A)
Limit R
DSon
= V
DS
/I
D
1
(1)
(2)
10
−1
(3)
(4)
(5)
(6)
10
−2
10
−3
10
−1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
(1) t
p
= 100
μs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25 °C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3.
Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
NX1029X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
4 of 20
