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NX3V1G384GM,132

IC ANALOG SWITCH SPST XSON6

器件类别:模拟混合信号IC    信号电路   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
Brand Name
NXP Semiconductor
是否Rohs认证
符合
零件包装代码
SON
包装说明
SON, SOLCC6,.04,20
针数
6
制造商包装代码
SOT886
Reach Compliance Code
compliant
JESD-30 代码
R-PDSO-N6
JESD-609代码
e3
湿度敏感等级
1
正常位置
NC
功能数量
1
端子数量
6
最大通态电阻 (Ron)
2.1 Ω
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SON
封装等效代码
SOLCC6,.04,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
电源
1.5/3.3 V
认证状态
Not Qualified
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Tin (Sn)
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
NX3V1G384
Low-ohmic single-pole single-throw analog switch
Rev. 6 — 4 November 2011
Product data sheet
1. General description
The NX3V1G384 is a low-ohmic single-pole single-throw analog switch. It has two
input/output terminals (Y and Z) and an active LOW enable input pin (E). When pin E is
HIGH, the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times. The NX3V1G384 allows signals with amplitude up to V
CC
to be transmitted
from Y to Z or from Z to Y. Its ultra-low ON resistance (0.3
)
and flatness (0.1
)
ensures
minimal attenuation and distortion of transmitted signals.
2. Features and benefits
Wide supply voltage range from 1.4 V to 4.3 V
Very low ON resistance (peak):
0.8
(typical) at V
CC
= 1.4 V
0.5
(typical) at V
CC
= 1.65 V
0.3
(typical) at V
CC
= 2.3 V
0.25
(typical) at V
CC
= 2.7 V
0.25
(typical) at V
CC
= 4.3 V
High noise immunity
ESD protection:
HBM JESD22-A114F Class 3A exceeds 7500 V
MM JESD22-A115-A exceeds 200 V
CDM AEC-Q100-011 revision B exceeds 1000 V
IEC61000-4-2 contact discharge exceeds 6000 V for switch ports
CMOS low-power consumption
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
Direct interface with TTL levels at 3.0 V
Control input accepts voltages above supply voltage
High current handling capability (500 mA continuous current under 3.3 V supply)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Applications
Cell phone
PDA
Portable media player
NXP Semiconductors
NX3V1G384
Low-ohmic single-pole single-throw analog switch
4. Ordering information
Table 1.
Ordering information
Package
Temperature range
NX3V1G384GW
NX3V1G384GM
40 C
to +125
C
40 C
to +125
C
Name
Description
Version
SOT353-1
SOT886
TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
XSON6
plastic extremely thin small outline package; no leads;
6 terminals; body 1
1.45
0.5 mm
Type number
5. Marking
Table 2.
Marking codes
[1]
Marking code
eL
eL
Type number
NX3V1G384GW
NX3V1G384GM
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
6. Functional diagram
E
Z
Y
001aag476
Y
Z
E
001aai598
Fig 1.
Logic symbol
Fig 2.
Logic diagram
7. Pinning information
7.1 Pinning
NX3V1G384
NX3V1G384
Y
Z
1
2
GND
GND
3
001aai611
Y
5
V
CC
1
6
V
CC
Z
2
5
n.c.
3
4
E
4
E
001aai612
Transparent top view
Fig 3.
Pin configuration SOT353-1 (TSSOP5)
Fig 4.
Pin configuration SOT886 (XSON6)
NX3V1G384
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 4 November 2011
2 of 18
NXP Semiconductors
NX3V1G384
Low-ohmic single-pole single-throw analog switch
7.2 Pin description
Table 3.
Symbol
Y
Z
GND
E
n.c.
V
CC
Pin description
Pin
SOT353-1
1
2
3
4
-
5
SOT886
1
2
3
4
5
6
independent input or output
independent output or input
ground (0 V)
enable input (active LOW)
not connected
supply voltage
Description
8. Functional description
Table 4.
Input E
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Switch
ON
OFF
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
SW
I
IK
I
SK
I
SW
Parameter
supply voltage
input voltage
switch voltage
input clamping current
switch clamping current
switch current
V
I
<
0.5
V
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
SW
>
0.5
V or V
SW
< V
CC
+ 0.5 V;
source or sink current
V
SW
>
0.5
V or V
SW
< V
CC
+ 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
T
stg
P
tot
[1]
[2]
[3]
Conditions
enable input E
[1]
[2]
Min
0.5
0.5
0.5
50
-
-
-
Max
+4.6
+4.6
-
50
500
750
Unit
V
V
mA
mA
mA
mA
V
CC
+ 0.5 V
storage temperature
total power dissipation
T
amb
=
40 C
to +125
C
[3]
65
-
150
250
C
mW
The minimum input voltage rating may be exceeded if the input current rating is observed.
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
For TSSOP5 package: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 package: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
NX3V1G384
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 4 November 2011
3 of 18
NXP Semiconductors
NX3V1G384
Low-ohmic single-pole single-throw analog switch
10. Recommended operating conditions
Table 6.
V
CC
V
I
V
SW
T
amb
t/V
[1]
Recommended operating conditions
Conditions
enable input E
[1]
Symbol Parameter
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
Min
1.4
0
0
40
-
Typ
-
-
-
-
-
Max
4.3
4.3
V
CC
+125
200
Unit
V
V
V
C
ns/V
V
CC
= 1.4 V to 3.6 V
[2]
To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
Applies to control signal levels.
[2]
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
Conditions
T
amb
= 25
C
Min
V
IH
HIGH-level
input voltage
V
CC
= 1.4 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 3.6 V to 4.3 V
V
IL
LOW-level
input voltage
V
CC
= 1.4 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 3.6 V to 4.3 V
I
I
input leakage
current
OFF-state
leakage
current
ON-state
leakage
current
enable input E;
V
I
= GND to 4.3 V;
V
CC
= 1.4 V to 4.3 V
Y port; see
Figure 5;
V
CC
= 1.4 V to 3.6 V
V
CC
= 3.6 V to 4.3 V
Z port; see
Figure 6;
V
CC
= 1.4 V to 3.6 V
V
CC
= 3.6 V to 4.3 V
-
-
-
-
-
-
-
-
-
-
5
10
100
100
150
-
-
-
-
-
50
50
690
690
800
500
500
6000
6000
7000
nA
nA
nA
nA
nA
-
-
-
-
5
10
-
-
50
50
500
500
nA
nA
0.65V
CC
1.7
2.0
0.7V
CC
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
0.35V
CC
0.7
0.8
0.3V
CC
-
T
amb
=
40 C
to +125
C
Min
0.65V
CC
1.7
2.0
0.7V
CC
-
-
-
-
-
Max
Max
(85
C)
(125
C)
-
-
-
-
0.7
0.8
0.3V
CC
0.5
-
-
-
-
0.7
0.8
1
V
V
V
V
V
V
A
Unit
0.35V
CC
0.35V
CC
V
0.3V
CC
V
I
S(OFF)
I
S(ON)
I
CC
supply current V
I
= V
CC
or GND;
V
SW
= GND or V
CC
V
CC
= 3.6 V
V
CC
= 4.3 V
NX3V1G384
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 4 November 2011
4 of 18
NXP Semiconductors
NX3V1G384
Low-ohmic single-pole single-throw analog switch
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
Conditions
T
amb
= 25
C
Min
C
I
C
S(OFF)
C
S(ON)
input
capacitance
OFF-state
capacitance
ON-state
capacitance
-
-
-
Typ
1.0
70
205
Max
-
-
-
T
amb
=
40 C
to +125
C
Min
-
-
-
Max
Max
(85
C)
(125
C)
-
-
-
-
-
-
pF
pF
pF
Unit
11.1 Test circuits
V
CC
V
IH
E
Z
GND
Y
V
IL
I
S
VO
VI
V
CC
E
Z
GND
Y
I
S
VI
VO
001aag479
001aag480
V
I
= 0.3 V or V
CC
0.3 V; V
O
= V
CC
0.3 V or 0.3 V.
V
I
= 0.3 V or V
CC
0.3 V; V
O
= open circuit.
Fig 5.
Test circuit for measuring OFF-state leakage
current
Fig 6.
Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8.
Resistance R
ON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see
Figure 8
to
Figure 14.
Symbol
R
ON(peak)
Parameter
ON resistance
(peak)
Conditions
V
I
= GND to V
CC
;
I
SW
= 100 mA; see
Figure 7
V
CC
= 1.4 V
V
CC
= 1.65 V
V
CC
= 2.3 V
V
CC
= 2.7 V
V
CC
= 4.3 V
R
ON(flat)
ON resistance
(flatness)
V
I
= GND to V
CC
;
I
SW
= 100 mA
V
CC
= 1.4 V
V
CC
= 1.65 V
V
CC
= 2.3 V
V
CC
= 2.7 V
V
CC
= 4.3 V
NX3V1G384
T
amb
=
40 C
to +85
C
T
amb
=
40 C
to +125
C
Unit
Min
Typ
[1]
Max
Min
Max
-
-
-
-
-
[2]
0.8
0.5
0.3
0.25
0.25
1.9
0.8
0.5
0.45
0.45
-
-
-
-
-
2.1
0.9
0.6
0.5
0.5
-
-
-
-
-
0.5
0.25
0.1
0.1
0.1
1.7
0.6
0.2
0.2
0.25
-
-
-
-
-
1.8
0.7
0.2
0.2
0.25
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 4 November 2011
5 of 18
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参数对比
与NX3V1G384GM,132相近的元器件有:NX3V1G384GW,125、NX3V1T384GM,115。描述及对比如下:
型号 NX3V1G384GM,132 NX3V1G384GW,125 NX3V1T384GM,115
描述 IC ANALOG SWITCH SPST XSON6 IC SWITCH SPST 450 MOHM 5TSSOP IC ANALOG SWITCH SPST XSON6
Brand Name NXP Semiconductor NXP Semiconductor NXP Semiconductor
零件包装代码 SON TSSOP SON
包装说明 SON, SOLCC6,.04,20 TSSOP, TSSOP5/6,.08 SON, SOLCC6,.04,20
针数 6 5 6
制造商包装代码 SOT886 SOT353 SOT886
Reach Compliance Code compliant compliant compliant
JESD-30 代码 R-PDSO-N6 R-PDSO-G5 R-PDSO-N6
JESD-609代码 e3 e3 e3
湿度敏感等级 1 1 1
正常位置 NC NC NC
功能数量 1 1 1
端子数量 6 5 6
最大通态电阻 (Ron) 2.1 Ω 2.1 Ω 2.1 Ω
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SON TSSOP SON
封装等效代码 SOLCC6,.04,20 TSSOP5/6,.08 SOLCC6,.04,20
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 NOT SPECIFIED
电源 1.5/3.3 V 1.5/3.3 V 1.4/4.3 V
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 NO LEAD GULL WING NO LEAD
端子节距 0.5 mm 0.635 mm 0.5 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
是否Rohs认证 符合 符合 -
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