Reflective Photosensors (Photo Reflectors)
CNB1009
(ON2173)
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Fast response : t
r
, t
f
= 6
µs
(typ.)
Small size, light weight
9.5±0.3
6.5±0.3
4.0±0.2
Unit : mm
12.0±0.3
(4.0)
LED
2-ø2.3
T.R
1.0
7.4±0.2
1.0
(1.0)
19.0±0.3
2-9.5±0.2
1.0
Features
ø2.2
(2.54)
Detection of paper, film and cloth
Detection of coin and bill
Optical mark reading
2
Detection of position and edge
1
Start, end mark detection of magnetic tape
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector to emitter voltage
Output (Photo Emitter to collector voltage
transistor)
Collector current
Collector power dissipation
Temperature
Operating ambient temperature
Storage temperature
Symbol Ratings
V
R
I
F
P
D*1
V
CEO
V
ECO
I
C
P
C*2
T
opr
3
50
75
20
5
30
100
–25 to +85
Unit
V
mA
mW
V
V
mA
mW
˚C
˚C
(Note) ( ) Dimension is reference
*1
T
stg
–30 to +100
Input power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is
1.34 mW/˚C at Ta
≥
25˚C.
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between pins
Output characteristics Collector cutoff current
Collector to emitter capacitance
Collector current
Transfer
characteristics Response time
*1
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C*1
I
F
= 50mA
V
R
= 3V
Conditions
min
V
R
= 0V, f = 1MHz
V
CE
= 10V
V
CE
= 10V, f= 1MHz
V
CC
= 10V, I
F
= 20mA, R
L
= 100Ω
100
t
r*2
, t
f*3
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
*2
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
I
C
V
CC
I
F
*3
;;
;
;;
;;
;
;;
;;
d = 5 mm
Time required for the collector current to increase from
10% to 90% of its final value.
Time required for the collector
90%
10%
current to decrease from 90%
to 10% of its initial value.
t
r
t
f
R
L
;;
Standard white paper (Reflective ratio 90%)
Note) The part number in the parenthesis shows conventional part number.
;
;;
3
4
1
2 3
4
Pin connection
Applications
2.5 min.
(15.5)
typ
1.2
50
max
1.5
10
0.2
Unit
V
µA
pF
µA
pF
µA
µs
5
500
6
0.3
V
1
Reflective Photosensors (Photo Reflectors)
CNB1009
I
F
, I
C
— Ta
60
60
I
F
— V
F
1.6
Ta = 25˚C
V
F
— Ta
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
Forward current, collector current
40
I
C
40
V
F
(V)
1.2
I
F
= 50mA
10mA
Forward current
Forward voltage
30
30
0.8
1mA
20
20
0.4
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Ambient temperature Ta (˚C )
I
C
— I
F
10
2
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
10
2
I
C
— V
CE
160
Ta = 25˚C
I
C
— Ta
V
CC
= 10V
I
F
= 20mA
R
L
= 100Ω
120
I
C
(mA)
10
I
C
(mA)
10
I
F
= 30mA
1
20mA
10mA
1
Relative output current
10
2
Collector current
Collector current
I
C
(%)
80
10
–1
10
–1
40
10
–2
10
–1
1
10
10
2
10
–2
10
–1
1
10
0
– 40 – 20
0
20
40
60
80
100
Forward current I
F
(mA)
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
V
CE
= 10V
10
3
t
r
— I
C
V
CC
= 10V
Ta = 25˚C
800
I
C
— d
V
CC
= 10V
Ta = 25˚C
R
L
= 100Ω
I
F
= 20mA
I
CEO
(µA)
1
10
2
I
C
(µA)
600
t
r
(µs)
Dark current
Rise time
10
–1
Collector current
10
500Ω
100Ω
400
10
–2
1
200
10
–3
– 40 – 20
0
20
40
60
80
100
10
–1
10
–2
10
–1
1
10
0
0
4
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
2
;
;
d
8
12
16
R
L
= 1kΩ
Distance d (mm)
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
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applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
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Consult our sales staff in advance for information on the following applications:
•
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•
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2001 MAR
