ON5088
NPN wideband silicon germanium RF transistor
Rev. 3 — 12 December 2012
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
High maximum stable gain 27 dB at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd and 3rd LNA stage in DBS LNBs
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and WiMAX applications
Analog/digital cordless applications
1.4 Quick reference data
Table 1.
V
CB
V
CE
V
EB
I
C
P
tot
h
FE
C
CBS
Quick reference data
Conditions
open emitter
open base
shorted base
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base
capacitance
T
sp
90
C
I
C
= 10 mA; V
CE
= 2 V;
T
j
= 25
C
V
CB
= 2 V; f = 1 MHz
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
Min
-
-
-
-
-
-
160
-
Typ
-
-
-
-
25
-
280
70
Max
10
3.0
10
1.0
40
136
400
-
Unit
V
V
V
V
mA
mW
open collector
fF
NXP Semiconductors
ON5088
NPN wideband silicon germanium RF transistor
Quick reference data
…continued
Conditions
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V;
f = 12 GHz; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 2 V;
f = 12 GHz;
S
=
opt
;
T
amb
= 25
C
[2]
Table 1.
f
T
G
p(max)
NF
Symbol Parameter
transition frequency
maximum power gain
noise figure
Min
-
-
-
Typ
55
13
1.1
Max
-
-
-
Unit
GHz
dB
dB
[1]
[2]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Graphic symbol
4
2
3. Ordering information
Table 3.
Ordering information
Package
Name
ON5088
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
4. Marking
Table 4.
ON5088
Marking
Marking
*6N
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
Type number
ON5088
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 12 December 2012
2 of 9
NXP Semiconductors
ON5088
NPN wideband silicon germanium RF transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CB
V
CE
V
EB
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
shorted base
open collector
T
sp
90
C
[1]
Min
-
-
-
-
-
-
65
-
Max
10
3.0
10
1.0
40
136
+150
150
Unit
V
V
V
V
mA
mW
C
C
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
440
Unit
K/W
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)CBO
collector-base breakdown
voltage
V
(BR)CEO
collector-emitter breakdown
voltage
I
C
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.8 GHz
f = 12 GHz
s
21
2
insertion power gain
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.8 GHz
f = 12 GHz
-
-
25.4 -
9.3
-
dB
dB
[1]
Conditions
I
C
= 2.5
A;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
Min Typ Max Unit
10
3.0
-
-
-
-
-
-
-
-
-
-
25
-
268
400
70
55
27
13
-
-
40
400
-
-
-
-
-
-
fF
fF
fF
GHz
dB
dB
V
V
mA
100 nA
160 280
ON5088
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 12 December 2012
3 of 9
NXP Semiconductors
ON5088
NPN wideband silicon germanium RF transistor
Table 7.
Characteristics
…continued
T
j
= 25
C unless otherwise specified.
Symbol Parameter
NF
noise figure
Conditions
I
C
= 5 mA; V
CE
= 2 V;
S
=
opt
; T
amb
= 25
C
f = 1.8 GHz
f = 12 GHz
G
ass
associated gain
I
C
= 5 mA; V
CE
= 2 V;
S
=
opt
; T
amb
= 25
C
f = 1.8 GHz
f = 12 GHz
P
L(1dB)
IP3
output power at 1 dB gain
compression
third-order intercept point
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C;
f = 1.8 GHz
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C;
f
2
= f
1
+ 1 MHz; f
1
= 1.8 GHz
-
-
-
-
22
10
9
17
-
-
-
-
dB
dB
dBm
dBm
-
-
0.43 -
1.1
-
dB
dB
Min Typ Max Unit
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
ON5088
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 12 December 2012
4 of 9
NXP Semiconductors
ON5088
NPN wideband silicon germanium RF transistor
8. Package outline
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
SOT343F
D
A
E
y
H
E
X
e
3
4
A
c
L
p
w
M
2
1
w
M
A
b
p
e
1
b
1
A
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
max
0.75
0.65
b
p
0.4
0.3
b
1
0.7
0.5
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e
1
1.15
H
E
2.2
2.0
L
p
0.48
0.38
w
0.2
y
0.1
OUTLINE
VERSION
SOT343F
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-07-12
06-03-16
Fig 1.
ON5088
Package outline SOT343F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 12 December 2012
5 of 9
