P0120003P
800mW GaAs Power FET (Pb-Free Type)
♦Features
· Up to 2.7 GHz frequency band
· Beyond +27 dBm output power
· Up to +43dBm Output IP3
· High Drain Efficiency
· 12dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
Technical Note
♦Functional
Diagram
Pin No.
1
2, 4
3
Function
Input/Gate
Ground
Output/Drain
4
1
Number
of devices
2
3
Container
7” Reel
Anti-static
Bag
♦Ordering
Information
Part No
P0120003P
KP023J
Description
GaAs Power FET
2.11-2.17GHz
Application Circuit
♦Applications
·Wireless communication system
·Cellular, PCS, PHS, W-CDMA, WLAN
1000
1
♦Description
P0120003P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance.
The lead frame is plated with Sn-Bi to
make the device Pb-free.
Eudyna’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
♦Absolute
Maximum Ratings (@Tc=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power
(continuous)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Vds
Vgs
Ids
Pin
Pt
Tj
Tstg
Value
8
-4
Idss
20
(*)
2.2
125
- 40 to +125
Units
V
V
---
dBm
W
°C
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to OIP3.
♦Electrical
Specifications (@Tc=25°C)
Parameter
DC
Saturated Drain Current
Transconductance
Pinchoff Voltage
Gate-Source Breakdown Voltage
Thermal Resistance
RF
Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Output IP3
Power Added Efficiency
Symbol
Idss
gm
Vp
|Vgs0|
Rth
f
P1dB
G
OIP3
?
add
Vds=6V
Ids=220mA
f=2.1GHz
29
12
---
---
43
56
Test Conditions
Vds=3V, Vg=0V
Vds=6V, Ids=300mA
Vds=6V, Ids=30mA
Igso= - 30µA
Channel-Case
Min.
---
250
- 3.0
3.0
---
Values
Typ.
---
---
---
---
---
Max.
850
---
- 1.7
---
45
2.7
---
---
---
---
Units
mA
mS
V
V
°C/W
GHz
dBm
dB
dBm
%
Specifications and information are subject to change without notice.
Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan
Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com
-1-
2006-11
Web Site : www.eudyna.com
P0120003P
800mW GaAs Power FET (Pb-Free Type)
♦Typical
Characteristics
Technical Note
4
Total Power Dissipation(W)
Power Derating Curve
Drain Current(mA)
1000
750
500
250
0
Transfer Curve
Vgs=0V
-0.5V
3
2
1
0
-1.0V
-1.5V
-2.0V
0
50
100
Tc (°C)
150
200
0
2
4
Vds (V)
6
8
♦Load-pull
Characteristics (Typical Data)
Tc=25°C, Vds=6V,
Ids=220mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
1.0
0.6
0.8
2.0
6.0
5
1
13
3.0
4.0
5.0
90
1.2GHz
45
4.0
5.0
10.0
0.2
0.6
0.8
2.0
3.0
0.4
1.0
0
- 0.
6
.0
-2
-1
35
4
- 0.
Scale for |S21|
-0.8
Specifications and information are subject to change without notice.
Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan
Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com
-2-
-1.0
-4.
40
- 5.0
5
-0.2
1.2GHz
-10
-10 .0
-3.
.0
0..4
2.4GHz
0
0.2
4.0
1.2GHz 2.4GHz
2.0
S21
S12
2.4GHz
0
S11
2.4GHz
1 0.0
Scale for |S12|
-180
0
0
S22
0.02
0.04
0.06
1.2GHz
45
-4
Web Site : www.eudyna.com
-90
-90
2006-11
P0120003P
800mW GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V,
Ids=180mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
Technical Note
1.0
0.6
0.8
2.0
6.0
35
13
90
1.2GHz
45
10.0
0.6
0.8
1.0
3.0
4.0
5.0
0.2
0.4
2.0
0
- 0.6
-0.8
.0
-2
-1
35
.4
-0
Scale for |S21|
Ids=220mA Freq (GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.760
0.756
0.754
0.754
0.755
0.755
0.754
-1.0
S11 Ang
-161.1
-172.5
178.0
169.6
162.0
154.9
148.0
S11 Ang
-161.1
-172.5
178.0
169.6
162.0
154.9
148.0
Ids=180mA Freq (GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.758
0.754
0.753
0.753
0.753
0.753
0.752
[Note]
You can download the S-parameter list from our web site:
www.eudyna.com
Specifications and information are subject to change without notice.
Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan
Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com
-3-
- .0
- 4.0
- .0
-5.0
-0.2
1.2GHz
S21 M ag
5.548
4.827
4.263
3.812
3.454
3.163
2.925
S21 M ag
5.539
4.820
4.256
3.805
3.449
3.158
2.920
-10
-10.0
-
-3
.0
04
0..4
3.0
4.0
5.0
2.4GHz
02
0.2
4.0
1.2GHz 2.4GHz
2.0
Scale for |S12|
-180
S21
2.4GHz
0
0.02
S11
2.4GHz
10.0
S12
0
0
0.04
0.06
S22
1.2GHz
5
5
-
-4
-90
S21 Ang
77.6
69.3
61.7
54.6
47.9
41.3
34.8
S21 Ang
77.7
69.3
61.8
54.7
48.0
41.4
34.9
S12 M ag
0.049
0.052
0.056
0.060
0.063
0.067
0.072
S12 M ag
0.051
0.054
0.057
0.061
0.065
0.069
0.073
S12 Ang
36.8
34.4
32.3
30.0
27.7
25.2
22.4
S12 Ang
35.5
33.1
30.9
28.6
26.3
23.8
21.0
S22 M ag
0.204
0.212
0.219
0.225
0.229
0.233
0.238
S22 M ag
0.215
0.223
0.229
0.235
0.239
0.243
0.248
S22 Ang
-160.1
-166.9
-172.7
-178.1
176.5
171.2
164.9
S22 Ang
-161.3
-168.2
-174.0
-179.5
175.0
169.6
163.4
2006-11
Web Site : www.eudyna.com
P0120003P
800mW GaAs Power FET (Pb-Free Type)
Ids=220mA
80
60
IP3
40
20
Pout (dBm)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
?
add (%)
0
?add
-20
IM3
-40
-60
-80
-100
-20
-15
-10
-5
0
5
10
15
20
Pin (dBm)
IM3/Pout
Gain
Pout
Pout (dBm)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
?
add (%)
40
20
0
Gain
80
60
IP3
Technical Note
Ids=180mA
Pout
?add
-20
IM3
-40
-60
-80
-100
-20
-15
-10
-5
0
5
10
15
20
Pin (dBm)
IM3/Pout
Device: P0120003P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=220mA
Source Matching: Mag 0.61 Ang -159.3°
Load Matching: Mag 0.48 Ang -155.4°
Device:P0120003P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias:Vds=6V,Ids=180mA
Source Matching:Mag 0.61 Ang -159.3°
Load Matching: Mag 0.437 Ang -160.7°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=220mA
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
Pout
(dBm)
-2.0
3.2
8.1
13.1
18.0
23.1
27.6
Pout
(dBm)
-1.7
3.5
8.4
13.4
18.4
23.4
27.6
Gain
(dB)
13.0
13.2
13.1
13.1
13.0
13.1
12.6
Gain
(dB)
13.3
13.5
13.4
13.4
13.4
13.4
12.6
IM3
(dBm)
-75.0
-70.2
-59.5
-46.0
-28.5
-2.5
11.1
IM3
(dBm)
-75.4
-68.7
-56.1
-41.3
-23.0
0.6
11.1
IM3/Pout
(dBc)
-73.0
-73.3
-67.7
-59.0
-46.5
-25.7
-16.5
IM3/Pout
(dBc)
-73.7
-72.2
-64.5
-54.7
-41.3
-22.8
-16.5
IP3
(dBm)
34.5
39.9
42.1
42.6
41.0
35.2
33.8
IP3
(dBm)
35.1
39.6
40.7
40.7
39.0
33.9
34.0
Id
(mA)
220.5
219.1
216.4
212.0
205.3
207.5
252.6
Id
(mA)
178.2
177.1
174.8
171.2
165.1
173.1
216.4
?add
(%)
0.0
0.2
0.5
1.5
4.9
15.7
35.8
?add
(%)
0.1
0.2
0.6
2.0
6.6
20.1
41.9
Id=180mA
Specifications and information are subject to change without notice.
Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan
Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com
-4-
2006-11
Web Site : www.eudyna.com
P0120003P
800mW GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V, Ids=220mA, Pin=0dBm
[Pout-Lstate]
f = 2.1GHz
G
pout
: 0.46∠ 135.5
Source : 0.76∠ -166.1
Pout max : 14.4dBm
+j50
+j25
+j100
+j25
Technical Note
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
G
IP 3
: 0.52∠ -155.9
Source : 0.73∠ -170.1
IP3 max : 40.45dBm
+j50
+j100
13.15
14.4
39.2
50O
100O
25O
25O
50O
100O
40.45
-j25
-j50
-j100
-j25
-j50
-j100
Tc=25°C, Vds=6V, Ids=180mA, Pin=0dBm
[Pout-Lstate]
f = 2.1GHz
G
pout
: 0.46∠ 138.7
Source : 0.76∠ -166.1
Pout max : 14.4dBm
+j50
+j25
+j100
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
G
IP 3
: 0.42∠ -160.2
Source : 0.73∠ -170.1
IP3 max : 39.3dBm
+j50
+j25
+j100
13.9
14.4
36.8
50O
100O
25O
25
O
39.3
50
O
100
O
-j25
-j50
-j100
-j25
-j50
-j100
Specifications and information are subject to change without notice.
Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan
Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com
-5-
2006-11
Web Site : www.eudyna.com
