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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
PBSS4140DPN
40 V low V
CEsat
NPN/PNP
transistor
Product data sheet
2001 Dec 13
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
FEATURES
•
600 mW total power dissipation
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation
•
Replaces two SOT23 packaged low V
CEsat
transistors
on same PCB area
•
Reduces required PCB area
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and muting
•
LCD backlighting
•
Supply line switching circuits
•
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
handbook, halfpage
5
4
PBSS4140DPN
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
TR1
TR2
R
CEsat
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
PARAMETER
collector-emitter voltage
peak collector current
peak collector current
NPN
PNP
equivalent on-resistance
MAX.
40
1
2
−
−
<500
UNIT
V
A
A
−
−
mΩ
6
5
4
DESCRIPTION
TR2
NPN/PNP low V
CEsat
transistor pair in an SC-74 (SOT457)
plastic package.
1
2
3
MAM445
TR1
1
2
3
MARKING
TYPE NUMBER
PBSS4140DPN
MARKING CODE
M2
Fig.1
Top view
Simplified outline SC74 (SOT457) and
symbol.
2001 Dec 13
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
PBSS4140DPN
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
208
UNIT
K/W
total power dissipation
600
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
40
40
5
1
2
1
370
+150
150
+150
V
V
V
A
A
A
mW
°C
°C
°C
2001 Dec 13
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
300
−
−
−
PBSS4140DPN
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
260
−
−
−
−
−
−
−
300
−
−
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
V
CB
= 40 V; I
E
= 0
V
CB
= 40 V; I
E
= 0; T
j
= 150
°C
V
CE
= 30 V; I
B
= 0
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 mA
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
NPN transistor
h
FE
V
BEsat
V
BEon
R
CEsat
f
T
C
c
h
FE
DC current gain
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
collector capacitance
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
I
C
= 1 A; I
B
= 100 mA
V
CE
= 5 V; I
C
= 1 A
I
C
= 500 mA; I
B
= 50 mA; note 1
V
CE
=10 V; I
C
= 50 mA; f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
V
CE
=
−5
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
BEsat
V
BEon
R
CEsat
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
collector capacitance
I
C
=
−1
A; I
B
=
−50
mA
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−500
mA; I
B
−50
mA; note 1
V
CE
=
−10
V; I
C
=
−50
mA;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f =1 MHz
300
200
−
−
−
150
−
900
−
1.2
1.1
<500
−
10
V
V
mΩ
MHz
pF
100
50
100
100
−
200
250
500
mV
mV
mV
nA
μA
nA
nA
PNP transistor
DC current gain
300
250
160
−
−
−
150
−
800
−
−
−1.1
−1.0
<500
−
12
V
V
mΩ
MHz
pF
2001 Dec 13
4
模拟电子
