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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS4350X
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
Product specification
Supersedes data of 2003 Nov 21
2004 Nov 04
Philips Semiconductors
Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
FEATURES
•
SOT89 (SC-62) package
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability: I
C
and I
CM
•
Higher efficiency leading to less heat generation
•
Reduced printed-circuit board requirements.
APPLICATIONS
•
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
•
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT89 plastic package.
PNP complement: PBSS5350X.
MARKING
TYPE NUMBER
PBSS4350X
S43
MARKING CODE
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
emitter
collector
base
PARAMETER
PBSS4350X
MAX. UNIT
50
3
5
130
V
A
A
mΩ
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
DESCRIPTION
2
3
1
sym042
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
2004 Nov 04
2
Philips Semiconductors
Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS4350X
SC-62
DESCRIPTION
PBSS4350X
VERSION
SOT89
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
T
amb
≤
25
°C
note 1
note 2
note 3
note 4
T
stg
T
j
T
amb
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
2
.
4. Device mounted on a ceramic printed-circuit board 7 cm
2
, single-sided copper, tin-plated.
storage temperature
junction temperature
ambient temperature
−
−
−
−
−65
−
−65
550
1
1.4
1.6
+150
150
+150
mW
W
W
W
°C
°C
°C
CONDITIONS
open emitter
open base
open collector
note 4
limited by T
j(max)
−
−
−
−
−
−
MIN.
MAX.
50
50
5
3
5
0.5
V
V
V
A
A
A
UNIT
2004 Nov 04
3
Philips Semiconductors
Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
handbook, halfpage
2
MLE186
Ptot
(W)
1.6
(1)
(2)
1.2
(3)
0.8
(4)
0.4
0
0
40
80
120
160
Tamb (°C)
(1) Ceramic PCB; 7 cm
2
mounting pad for collector.
(2) FR4 PCB; 6 cm
2
copper
mounting pad for collector.
(3) FR4 PCB; 1 cm
2
copper
mounting pad for collector.
(4) Standard footprint.
Fig.2 Power derating curves.
2004 Nov 04
4
