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256Mb and 512Mb (256Mb/256Mb),

P33-65nm

Features

Micron Parallel NOR Flash Embedded

Memory (P33-65nm)

RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF,

PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF,

PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE,

PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE

Features

• High performance

– 95ns initial access for Easy BGA

– 105ns initial access for TSOP

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– 4-, 8-, 16-, and continuous word options for burst

mode

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 3.0V buffered programming at 1.14 MB/s (TYP)

using a 512-word buffer

• Architecture

– MLC: highest density at lowest cost

– Asymmetrically blocked architecture

– Four 32KB parameter blocks: top or bottom con-

figuration

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

– V

(core) voltage: 2.3V to 3.6V

– V

CCQ

(I/O) voltage: 2.3V to 3.6V

– Standy current: 65µA (TYP) for 256Mb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

• Security

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

– Absolute write protection: V

= V

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 25μs (TYP) program suspend

– 25μs (TYP) erase suspend

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Density and Packaging

– 56-lead TSOP package (256Mb only)

– 64-ball Easy BGA package (256Mb, 512Mb)

– QUAD+ and SCSP packages (256Mb, 512Mb)

– 16-bit wide data bus

• Quality and reliabilty

– JESD47 compliant

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

PDF: 09005aef845667ad

p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

256Mb and 512Mb (256Mb/256Mb),

P33-65nm

Features

Discrete and MCP Part Numbering Information

Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-

ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi-

cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con-

tact the factory for devices not found.

Note:

Not all part numbers listed here are available for ordering.

Table 1: Discrete Part Number Information

Part Number Category

Package

Category Details

JS = 56-lead TSOP, lead free

PC = 64-ball Easy BGA, lead-free

RC = 64-ball Easy BGA, leaded

Product Line

Density

Product Family

Parameter Location

Lithography

Features

Note:

28F = Micron Flash memory

256 = 256Mb

P33 (V

= 2.3 to 3.6V; V

CCQ

= 2.3 to 3.6V)

B/T = Bottom/Top parameter

F = 65nm

1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-

mation. Sample part number: JS28F256P33BF*

PDF: 09005aef845667ad

p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

256Mb and 512Mb (256Mb/256Mb),

P33-65nm

Features

Table 2: MCP Part Number Information

Part Number Category

Package

Product Line

Density

Product Family

IO Voltage and Chip Configuration

Category Details

RC = 64-ball Easy BGA, leaded

PC = 64-ball Easy BGA, lead-free

48F = Micron Flash memory only

0 = No die

4 = 256Mb

P = Micron Flash memory (P33)

0 = No die

X = Individual Chip Enables

T = Virtual Chip Enables

= 2.3 to 3.6V; V

CCQ

= 2.3 to 3.6V

Parameter Location

Ballout

Lithography

Features

Note:

B/T = Bottom/Top parameter

0 = Discrete

E = 65nm

1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-

mation. Sample part number: RC48F4400P0TB0E*

Table 3: Standard Part Numbers

Density

256Mb

Configuration

Bottom boot

Top boot

512Mb

(256Mb/256Mb)

Top/bottom boot

–

Medium

Tray

Tape and reel

Tray

Tape and reel

Tray

Tape and reel

JS28F256P33BFE

–

JS28F256P33TFE

–

PC28F256P33BFE

PC28F256P33BFF

PC28F256P33TFE

–

PC48F4400P0TB0EE

–

RC28F256P33BFE

RC28F256P33BFF

RC28F256P33TFE

–

RC48F4400P0TB0EJ

–

Table 4: OTP Feature Part Numbers

Density

256Mb

Configuration

Bottom boot

Top boot

512Mb

(256Mb/256Mb)

Note:

Top/bottom boot

–

Medium

Tray

Tape and reel

Tray

Tape and reel

Tray

Tape and reel

PC28F256P33BFR

–

PC48F4400P0TB0EH

–

1. This data sheet covers only standard parts. For OTP parts, contact your local Micron representative.

PDF: 09005aef845667ad

p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

256Mb and 512Mb (256Mb/256Mb),

P33-65nm

Features

Contents

Important Notes and Warnings ......................................................................................................................... 8

General Description ......................................................................................................................................... 9

Virtual Chip Enable Description ........................................................................................................................ 9

Memory Map ................................................................................................................................................. 11

Package Dimensions ....................................................................................................................................... 12

Pinouts and Ballouts ....................................................................................................................................... 14

Signal Descriptions ......................................................................................................................................... 16

Bus Operations ............................................................................................................................................... 18

Read .......................................................................................................................................................... 18

Write .......................................................................................................................................................... 18

Output Disable ........................................................................................................................................... 18

Standby ..................................................................................................................................................... 18

Reset .......................................................................................................................................................... 19

Device Command Codes ................................................................................................................................. 20

Device Command Bus Cycles .......................................................................................................................... 23

Read Operations ............................................................................................................................................. 25

Asynchronous Page Mode Read ................................................................................................................... 25

Asynchronous Single Word Read ................................................................................................................. 25

Synchronous Burst Mode Read ................................................................................................................... 26

Read CFI .................................................................................................................................................... 26

Read Device ID ........................................................................................................................................... 26

Device ID Codes ............................................................................................................................................. 27

Program Operations ....................................................................................................................................... 28

Word Programming (40h) ........................................................................................................................... 28

Buffered Programming (E8h, D0h) .............................................................................................................. 28

Buffered Enhanced Factory Programming (80h, D0h) ................................................................................... 29

Program Suspend ....................................................................................................................................... 31

Program Resume ........................................................................................................................................ 32

Program Protection .................................................................................................................................... 32

Erase Operations ............................................................................................................................................ 33

BLOCK ERASE Command ........................................................................................................................... 33

BLANK CHECK Command .......................................................................................................................... 33

ERASE SUSPEND Command ....................................................................................................................... 34

ERASE RESUME Command ........................................................................................................................ 34

Erase Protection ......................................................................................................................................... 34

Security Operations ........................................................................................................................................ 35

Block Locking ............................................................................................................................................. 35

BLOCK LOCK Command ............................................................................................................................ 35

BLOCK UNLOCK Command ....................................................................................................................... 35

BLOCK LOCK DOWN Command ................................................................................................................. 35

Block Lock Status ....................................................................................................................................... 35

Block Locking During Suspend ................................................................................................................... 36

Selectable OTP Blocks ................................................................................................................................. 37

Password Access ......................................................................................................................................... 37

Status Register ................................................................................................................................................ 38

Read Status Register ................................................................................................................................... 38

Clear Status Register ................................................................................................................................... 39

Configuration Register .................................................................................................................................... 40

Read Configuration Register ....................................................................................................................... 40

Read Mode ................................................................................................................................................. 40

PDF: 09005aef845667ad

p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

256Mb and 512Mb (256Mb/256Mb),

P33-65nm

Features

Latency Count ............................................................................................................................................

End of Wordline Considerations ..................................................................................................................

WAIT Signal Polarity and Functionality ........................................................................................................

WAIT Delay ................................................................................................................................................

Burst Sequence ..........................................................................................................................................

Clock Edge .................................................................................................................................................

Burst Wrap .................................................................................................................................................

Burst Length ..............................................................................................................................................

One-Time Programmable Registers .................................................................................................................

Read OTP Registers .....................................................................................................................................

Program OTP Registers ...............................................................................................................................

Lock OTP Registers .....................................................................................................................................

Common Flash Interface ................................................................................................................................

READ CFI Structure Output ........................................................................................................................

Flowcharts .....................................................................................................................................................

Power and Reset Specifications .......................................................................................................................

Power Supply Decoupling ...........................................................................................................................

Maximum Ratings and Operating Conditions ..................................................................................................

AC Test Conditions and Capacitance ...............................................................................................................

DC Electrical Specifications ............................................................................................................................

AC Read Specifications ...................................................................................................................................

AC Write Specifications ...................................................................................................................................

Program and Erase Characteristics ..................................................................................................................

Revision History .............................................................................................................................................

Rev. D – 2/18 ..............................................................................................................................................

Rev. C – 9/15 ...............................................................................................................................................

Rev. B – 12/13 .............................................................................................................................................

Rev. A – 8/13 ...............................................................................................................................................

PDF: 09005aef845667ad

p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

参数对比

与PC28F256P33BFE相近的元器件有：PC48F4400P0TB0EE、PC48F4400P0TB0EH、JS28F256P33BFE、JS28F256P33TFE、PC28F256P33BFR、PC28F256P33TFE、RC28F256P33BFE、RC28F256P33TFE、PC28F256P33BFF TR。描述及对比如下：

型号	PC28F256P33BFE	PC48F4400P0TB0EE	PC48F4400P0TB0EH	JS28F256P33BFE	JS28F256P33TFE	PC28F256P33BFR	PC28F256P33TFE	RC28F256P33BFE	RC28F256P33TFE	PC28F256P33BFF TR
描述	IC FLASH 256M PARALLEL 64EASYBGA	IC FLASH 512M PARALLEL 64EASYBGA	IC FLASH 512M PARALLEL 64EASYBGA	IC FLASH 256M PARALLEL 56TSOP	IC FLASH 256M PARALLEL 56TSOP	IC FLASH 256M PARALLEL 64EASYBGA	IC FLASH 256M PARALLEL 64EASYBGA	IC FLASH 256M PARALLEL 64EASYBGA	IC FLASH 256M PARALLEL 64EASYBGA	IC FLASH 256M PARALLEL 64EASYBGA
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	FLASH - NOR
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	不符合	不符合	-
包装说明	TBGA, BGA64,8X8,40	TBGA,	TBGA,	TSSOP, TSSOP56,.8,20	TSSOP, TSSOP56,.8,20	TBGA, BGA64,8X8,40	TBGA, BGA64,8X8,40	BGA-64	BGA-64	-
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	not_compliant	unknown	-
最长访问时间	95 ns	95 ns	95 ns	105 ns	105 ns	95 ns	95 ns	95 ns	95 ns	-
其他特性	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	-
启动块	BOTTOM	BOTTOM	BOTTOM	BOTTOM	TOP	BOTTOM	TOP	BOTTOM	TOP	-
命令用户界面	YES	-	-	YES	YES	YES	YES	YES	YES	-
通用闪存接口	YES	-	-	YES	YES	YES	YES	YES	YES	-
数据轮询	NO	-	-	NO	NO	NO	NO	NO	NO	-
JESD-30 代码	R-PBGA-B64	R-PBGA-B64	R-PBGA-B64	R-PDSO-G56	R-PDSO-G56	R-PBGA-B64	R-PBGA-B64	R-PBGA-B64	R-PBGA-B64	-
JESD-609代码	e1	e1	e1	e3	e3	e1	e1	e1	e1	-
长度	13 mm	13 mm	13 mm	18.4 mm	18.4 mm	13 mm	13 mm	13 mm	13 mm	-
内存密度	268435456 bit	536870912 bit	536870912 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	-
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	-
内存宽度	16	16	16	16	16	16	16	16	16	-
功能数量	1	1	1	1	1	1	1	1	1	-
部门数/规模	4,255	-	-	4,255	4,255	4,255	4,255	4,255	4,255	-
端子数量	64	64	64	56	56	64	64	64	64	-
字数	16777216 words	33554432 words	33554432 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	-
字数代码	16000000	32000000	32000000	16000000	16000000	16000000	16000000	16000000	16000000	-
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	-
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-
组织	16MX16	32MX16	32MX16	16MX16	16MX16	16MX16	16MX16	16MX16	16MX16	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装代码	TBGA	TBGA	TBGA	TSSOP	TSSOP	TBGA	TBGA	TBGA	TBGA	-
封装等效代码	BGA64,8X8,40	-	-	TSSOP56,.8,20	TSSOP56,.8,20	BGA64,8X8,40	BGA64,8X8,40	BGA64,8X8,40	BGA64,8X8,40	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	-
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	NOT SPECIFIED	260	260	NOT SPECIFIED	260	NOT SPECIFIED	-
电源	2.5/3.3 V	-	-	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	-
编程电压	3 V	3 V	3 V	2.7 V	3 V	3 V	3 V	2.7 V	3 V	-
认证状态	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-
部门规模	16K,64K	-	-	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K	-
最大待机电流	0.00021 A	-	-	0.00021 A	0.00021 A	0.00021 A	0.00021 A	0.00021 A	0.00021 A	-
最大压摆率	0.031 mA	-	-	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA	-
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	-
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	-
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	-
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	-
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn)	Matte Tin (Sn)	TIN SILVER COPPER	Tin/Silver/Copper (Sn/Ag/Cu)	TIN SILVER COPPER	TIN SILVER COPPER	-
端子形式	BALL	BALL	BALL	GULL WING	GULL WING	BALL	BALL	BALL	BALL	-
端子节距	1 mm	1 mm	1 mm	0.5 mm	0.5 mm	1 mm	1 mm	1 mm	1 mm	-
端子位置	BOTTOM	BOTTOM	BOTTOM	DUAL	DUAL	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	30	30	NOT SPECIFIED	30	30	NOT SPECIFIED	30	NOT SPECIFIED	-
切换位	NO	-	-	NO	NO	NO	NO	NO	NO	-
类型	NOR TYPE	-	-	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	-
宽度	10 mm	10 mm	10 mm	14 mm	14 mm	10 mm	10 mm	10 mm	10 mm	-
厂商名称	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	-	Micron Technology	-	Micron Technology	-