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PDTA114EM

PNP resistor-equipped transistor

器件类别：分立半导体    晶体管   

厂商名称：NXP(恩智浦)

厂商官网：https://www.nxp.com

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SC-101
包装说明
1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
30
JESD-30 代码
R-PBCC-N3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
峰值回流温度（摄氏度）
260
极性/信道类型
PNP
最大功率耗散 (Abs)
0.25 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
NO LEAD
端子位置
BOTTOM
处于峰值回流温度下的最长时间
30
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA114E series
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Product data sheet
Supersedes data of 2003 Apr 10
2004 Aug 02
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PDTA114E series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
TYP.
−
−
10
10
MAX.
−50
−100
−
−
UNIT
V
mA
kΩ
kΩ
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
03
03
03
E5
TA114E
*03
(1)
*03
(1)
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
MARKING CODE
NPN COMPLEMENT
2004 Aug 02
2
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTA114E series
PINNING
TYPE NUMBER
PDTA114ES
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
2
R1
1
R2
3
MAM338
DESCRIPTION
base
collector
emitter
1
2
3
3
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114ET
PDTA114EU
1
Top view
2
MDB271
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
R2
3
3
2
PDTA114EM
handbook, halfpage
1
2
3
R1
3
1
Bottom view
MDB267
base
emitter
collector
3
2
1
R2
2
2004 Aug 02
3
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
2004 Aug 02
4
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
−
−
−
−
−
−
−
−65
−
−65
−
−
−
−
CONDITIONS
open emitter
open base
open collector
−
−
−
PDTA114E series
MIN.
MAX.
−50
−50
−10
+10
−40
−100
−100
500
250
250
200
150
250
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
VALUE
250
500
500
625
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
CONDITIONS
V
CB
=
−50
V; I
E
= 0
V
CE
=
−30
V; I
B
= 0
V
CE
=
−30
V; I
B
= 0; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−5
mA
I
C
=
−100 μA;
V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−0.3
V
PDTA114E series
MIN.
−
−
−
−
30
−
−
−2.5
7
0.8
TYP.
−
−
−
−
−
−
−1.1
−1.8
10
1
−
MAX.
−100
−1
−50
−400
−
−150
−0.8
−
13
1.2
3
UNIT
nA
μA
μA
μA
mV
V
V
kΩ
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−0.5
mA
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
−
pF
2004 Aug 02
5
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参数对比
与PDTA114EM相近的元器件有：PDTA114E、PDTA114EE、PDTA114EEF、PDTA114EK、PDTA114ES、PDTA114ET、PDTA114EU。描述及对比如下：
型号 PDTA114EM PDTA114E PDTA114EE PDTA114EEF PDTA114EK PDTA114ES PDTA114ET PDTA114EU
描述 PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor
是否Rohs认证 符合 - 符合 符合 符合 符合 符合 符合
厂商名称 NXP(恩智浦) - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) - NXP(恩智浦)
零件包装代码 SC-101 - SC-75 SC-89 SOT-23 TO-92 SOT-23 SC-70
包装说明 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN - PLASTIC, SC-75, 3 PIN PLASTIC, SC-89, 3 PIN SMALL OUTLINE, R-PDSO-G3 PLASTIC, SC-43A, 3 PIN SMALL OUTLINE, R-PDSO-G3 PLASTIC, SC-70, 3 PIN
针数 3 - 3 3 3 3 3 3
Reach Compliance Code compli - compli unknow compli unknow compli compli
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 1 - BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V - 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 30 - 30 30 30 30 30 30
JESD-30 代码 R-PBCC-N3 - R-PDSO-G3 R-PDSO-F3 R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 - e3 e3 e3 e3 e3 e3
元件数量 1 - 1 1 1 1 1 1
端子数量 3 - 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 - 260 NOT SPECIFIED 260 NOT SPECIFIED 260 260
极性/信道类型 PNP - PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.25 W - 0.15 W 0.25 W 0.25 W 0.5 W 0.25 W 0.2 W
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES - YES YES YES NO YES YES
端子面层 Tin (Sn) - Tin (Sn) Tin (Sn) Tin (Sn) Matte Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 NO LEAD - GULL WING FLAT GULL WING THROUGH-HOLE GULL WING GULL WING
端子位置 BOTTOM - DUAL DUAL DUAL BOTTOM DUAL DUAL
处于峰值回流温度下的最长时间 30 - 30 NOT SPECIFIED 40 NOT SPECIFIED 30 30
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON SILICON
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