描述 |
Small Signal Bipolar Transistor |
Small Signal Bipolar Transistor |
Small Signal Bipolar Transistor |
Small Signal Bipolar Transistor |
Small Signal Bipolar Transistor |
是否Rohs认证 |
符合 |
符合 |
符合 |
符合 |
符合 |
包装说明 |
SMALL OUTLINE, R-PDSO-F6 |
SMALL OUTLINE, R-PDSO-F6 |
SMALL OUTLINE, R-PDSO-G6 |
SMALL OUTLINE, R-PDSO-G6 |
SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code |
compliant |
compliant |
compliant |
compliant |
compliant |
其他特性 |
BUILT IN BIAS RESISTOR RATIO IS 1 |
BUILT IN BIAS RESISTOR RATIO IS 1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC) |
0.1 A |
0.1 A |
0.1 A |
0.1 A |
0.1 A |
集电极-发射极最大电压 |
50 V |
50 V |
50 V |
50 V |
50 V |
配置 |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) |
80 |
80 |
80 |
80 |
80 |
JESD-30 代码 |
R-PDSO-F6 |
R-PDSO-F6 |
R-PDSO-G6 |
R-PDSO-G6 |
R-PDSO-G6 |
JESD-609代码 |
e3 |
e3 |
e3 |
e3 |
e3 |
湿度敏感等级 |
1 |
1 |
1 |
1 |
1 |
元件数量 |
2 |
2 |
2 |
2 |
2 |
端子数量 |
6 |
6 |
6 |
6 |
6 |
封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
封装形状 |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
封装形式 |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
峰值回流温度(摄氏度) |
260 |
NOT SPECIFIED |
260 |
NOT SPECIFIED |
NOT SPECIFIED |
极性/信道类型 |
PNP |
PNP |
PNP |
PNP |
PNP |
表面贴装 |
YES |
YES |
YES |
YES |
YES |
端子面层 |
Tin (Sn) |
Tin (Sn) |
Tin (Sn) |
Tin (Sn) |
Tin (Sn) |
端子形式 |
FLAT |
FLAT |
GULL WING |
GULL WING |
GULL WING |
端子位置 |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
处于峰值回流温度下的最长时间 |
30 |
NOT SPECIFIED |
30 |
NOT SPECIFIED |
NOT SPECIFIED |
晶体管应用 |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
晶体管元件材料 |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
厂商名称 |
Nexperia |
- |
Nexperia |
Nexperia |
Nexperia |