型号
- 型号
- 关键词
TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Small Signal
厂商名称：NXP(恩智浦)
厂商官网：https://www.nxp.com
下载文档| 型号 | PHN103/T3 | PHN103T/R | PHN103 |
|---|---|---|---|
| 描述 | TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Small Signal | TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET General Purpose Small Signal | TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| Reach Compliance Code | unknown | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 8.5 A | 8.5 A | 8.5 A |
| 最大漏源导通电阻 | 0.03 Ω | 0.03 Ω | 0.03 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | MS-012AA | MS-012AA | MS-012AA |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 零件包装代码 | SOIC | - | SOIC |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 | - | SMALL OUTLINE, R-PDSO-G8 |
| 针数 | 8 | - | 8 |
| 最高工作温度 | - | 150 °C | 150 °C |
| 功耗环境最大值 | - | 4 W | 4 W |
| 最大功率耗散 (Abs) | - | 2.7 W | 4 W |