Philips Semiconductors
Objective Specification
PowerMOS transistor
Isolated version of PHP1N60E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a full
pack, plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
PHX1N60E
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
600
1.3
25
6
UNIT
V
A
W
Ω
PINNING - SOT186A
PIN
1
2
3
gate
drain
source
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DS
V
DGR
±V
GS
I
D
I
DM
I
DR
I
DRM
P
tot
T
stg
T
j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
R
GS
= 20 kΩ
T
hs
= 25 ˚C
T
hs
= 100 ˚C
T
hs
= 25 ˚C
T
hs
= 25 ˚C
T
hs
= 25 ˚C
T
hs
= 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
600
600
30
1.3
0.83
5.2
1.3
5.2
25
150
150
UNIT
V
V
V
A
A
A
A
A
W
˚C
˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
CONDITIONS
MIN.
MAX.
UNIT
Drain-source non-repetitive I
D
= 1.9 A; V
DD
≤
50 V; V
GS
= 10 V;
unclamped inductive turn-off R
GS
= 50
Ω
energy
T
j
= 25˚C prior to surge
T
j
= 100˚C prior to surge
Drain-source repetitive
I
D
= 1.9 A; V
DD
≤
50 V; V
GS
= 10 V;
unclamped inductive turn-off R
GS
= 50
Ω;
T
j
≤
150 ˚C
energy
W
DSR1
-
-
-
120
20
3.6
mJ
mJ
mJ
1. Pulse width and frequency limited by T
j(max)
November 1996
1
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX1N60E
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
-
TYP.
-
55
MAX.
5
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
V
SD
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
V
DS
= V
GS
; I
D
= 0.25 mA
V
DS
= 600 V; V
GS
= 0 V; T
j
= 25 ˚C
V
DS
= 480 V; V
GS
= 0 V; T
j
= 125 ˚C
V
GS
=
±30
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 0.9 A
I
F
= 1.9 A ;V
GS
= 0 V
MIN.
600
2.0
-
-
-
-
-
TYP.
-
3.0
10
0.1
10
5.3
1.1
MAX.
-
4.0
100
1.0
100
6
1.4
UNIT
V
V
µA
mA
nA
Ω
V
November 1996
2
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX1N60E
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL
g
fs
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
t
rr
Q
rr
L
d
L
s
PARAMETER
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-drain diode reverse
recovery time
Source-drain diode reverse
recovery charge
Internal drain inductance
Internal source inductance
CONDITIONS
V
DS
= 15 V; I
D
= 0.9 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.8
224
27
6
10
1
5
10
30
30
20
350
3.5
4.5
7.5
MAX.
-
310
40
10
-
-
-
15
45
40
30
-
-
-
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
µC
nH
nH
V
GS
= 10 V; I
D
= 1.9 A; V
DS
= 480 V
V
DD
= 30 V; I
D
= 1.9 A;
V
GS
= 10 V; R
GS
= 50
Ω;
R
GEN
= 50
Ω
I
F
= 1.9 A; -dI
F
/dt = 100 A/µs;
V
GS
= 0 V; V
R
= 100 V
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
November 1996
3
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX1N60E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
November 1996
4
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX1N60E
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1996
5
Rev 1.000
