™
Peripheral
Imaging
Corporation
PI3034A
200DPI CIS Sensor Chip
Engineering Data Sheet
Description:
Peripheral Imaging Corporation PI3034A CIS sensor chip is a 200 dot per inch resolution
linear array image sensor chip, which uses PIC’s proprietary CMOS Image Sensing
Technology. This image sensor’s intended applications are to fabricate Contact Image Sensor,
CIS modules with various lengths. This is accomplished by mounting them on a printed circuit
board (PCB) through an end-to-end butting process. This process is generally referred to as
the chip-on-board technology. Its typical circuit implementation in an A4 size 1728 elements
CIS module is shown in a schematic diagram on page 6. The schematic demonstrates its
operational implementation and interfacing circuits. They are used in facsimile, scanner, check
reader, and office automation equipment.
Figure 1 is a block diagram of the sensor chip. Each sensor chip consists of 64 detector elements,
their associated multiplexing switches, buffers, and a chip selector. The detector element-to-element
spacing is approximately 125 um. The size of each chip without scribe lines is 7950 um by 290 um.
Each sensor chip has 6 bonding pads. The pad symbols and functions are described in Table 1.
7950 µm
1
2
3
4
Row of 64 Sensors
and Video Signal
Line Multiplexer
Read Out Shift Register
61
62
63
64
290
µm
Buffer
SI
Buffer
CLK
VDD
VSS
Chip
Select
SIG
Buffer
SO
Figure 1. PI3034A Sensor Chip Block Diagram
Page 1 of 7 - PI3034A, 06/15/03
SYMBOL
SI
CLK
VDD
VSS
SIG
SO
FUNCTION
Start Pulse: Input to start the line scan.
Clock Pulse: Input to clock the Shift Register.
Positive Supply: +5 volt supply connected to substrate.
Digital Ground: Connection topside common.
Signal Current Output: Output for video signal current
End of Scan Pulse: Output from the shift register at end of scan.
Table 1. Pad Symbols and Functions
Bonding pad layout diagram:
Figure 2 shows the bonding pad locations for PI3034A Sensor Chip relative to the lower left corner
of the die.
7950 µm
SENSOR DIE
Y
290 µm
SIG
SO
SI
X
X
CLK
VDD
GRD
NOTE: ALL PAD OPENINGS ARE 140 X 80 µm.
NOTES:
1. THE DRAWING IS NOT TO SCALE.
2. THE DIE LENGTH AND WIDTH
ARE GIVEN AS SHOWN.
3. THE PAD LOCATION ARE GIVEN
IN THE TABLE.
4. THERE ARE TWO EXAMPLES
OF THE X AND Y LOCATIONS
SHOWN ON THE FIRST TWO PADS.
THEY ARE MEASURED TO THE LEFT
BOTTOM CORNER OF THE PAD OPENING.
5. ALL DIMENSIONS ARE IN µm.
PAD
SI
CLK
VDD
VSS
SIG
SO
FUNCTION
START INPUT
CLOCK INPUT
+5 SUPPLY
GROUND
VIDEO SIGNAL OUT
SCAN OUTPUT
Y
67.5
67.5
67.5
67.5
67.5
67.5
X
737.0
1546.5
2356.0
3156.5
3975.0
7213.0
PI3034A IMAGE SENSOR
Figure 2. Bonding Pad Layout Diagram
Electro-Optical Characteristics (25 °C)
Table 2, below, lists the electro-optical characteristics of PI3034A sensor chip at 25 °C.
Parameters
Number of Photo-elements
Pixel-to-pixel spacing
Line scanning rate
Clock frequency
Video Output Voltage
Amplitude
Output voltage non-uniformity
Symbols
Typical
64
125
3.45
0.5
1.0
±
7.5
Tint
(1)
f
(2)
Vp
(3)
Up
(4)
Units
elements
µm
ms/line
MHz
Volts
%
Notes
Vp depends the output
circuits. See note 3.
Page 2 of 7 - PI3034A, 06/15/03
Chip-to-chip non-uniformity
Dark output voltage
Dark output non-uniformity
Ud
Vd
Ud
(5)
(6)
±
7.5
<50
<50
%
mV
mV
Table 2. Electro-Optical Characteristic
Notes: (1) Tint stands for the line scanning rate or the integration time. It is determined
by the time interval between two start pulses.
(2) f stands for the input clock frequency:
@ 500 kHz the total active line scan time for a A4 CIS module is 3.45 ms
of the line integration time.
(3) Vp is an average of the pixel amplitudes in one complete line scan. These
video pixels are converted from signal currents produced by the
phototransistor at each pixel site. The signal current charges the video line
capacitance that is isolated with amplifier buffer. The output current is
proportional to the charges that have been collected on the phototransistor’s
base through a photon-to-electron conversion process. These charges on
the base draw signal current through the emitter proportionally to the Beta of
the phototransistor. Then the emitter current flows out onto the output video
line capacitance where it is integrated and converted to signal voltage. This
is the signal voltage that the host receiver senses. Before accessing the
subsequent pixel, this video signal on the video line capacitance is reset
through a shunt switch on the video line. Then the next pixel in sequence is
readout onto the video line. This video buffer amplifier terminating the video
line provides the necessary amplification. Most user generally set their
operating output signal to ~ 1.0 V peak average with the saturation level of ~
1.5 V. For the circuit reference see the attached schematic diagram on
page 6. Typical amplification (adjustable) gain is between 4 to 5 times the
voltage that is measured on the video line.
(4) Up = [( Vpmax-Vp)/ Vp]x100%
Or [( Vp-Vpmin)/ Vp]x100%
Where Vp =
∑
Vpn
/
N
n
N
Vpmax is the maximum pixel output voltage in the light.
Vpmin is the minimum pixel output voltage in the light.
In the light means module exposed a uniform light.
(5) Vd = ( Vdmax+Vdmin)/2
Vdmax is the maximum pixel output voltage in the dark.
Vdmin is the minimum pixel output voltage in the dark.
In the dark means that sensor has no exposure to the light.
(6) Ud = [( Vdmax-Vdmin)/ Vd]x100%
Absolute Maximum Ratings (not operational conditions):
Parameters
Power Supply Voltage
Power Supply Current
Input clock pulse (high level)
Input clock pulse (low level)
Symbol
VDD
IDD
Vih
Vil
Maximum Rating
10
<2.0
Vdd + 0.5
-0.25
Units
Volts
ma
Volts
Volts
Table 3. Maximum Specification
Page 3 of 7 - PI3034A, 06/15/03
Operating Conditions at Room Temperature
Parameters
Power Supply
Input clock pulses high level
Input clock pulse low level
Operating high level exposed output
Clock Frequency
Clock pulse duty cycle
Clock pulse high durations
Integration time
Operating Temperature
Symbol
VDD
Vih
(1)
Vil
(1)
Vsig
(Isig)
(2)
f
tw
Tint
Top
Min.
4.5
3.0
0
Typical
5.0
5.0
0
1.0
0.5
25
0.5
3.45
25
Max.
5.5
VDD
0.8
Units
Volts
Volts
Volts
Volts
MHz
%
µsec
ms
o
C
Notes
1
1
2
1.0
10
50
Table 4. Operating Specifications
Note: (1) Applies to both CLK and SI.
(2) See note 3 under Table 2. Electro-Optical Characteristics. See the schematic on page 6.
Switching Characteristics @ 25 °C
to
CLK
tprh
tdh
SI
tds
Vsig
tsh
tdl
tw
Figure 3. Timing Diagram of the PI3034A Sensor
Page 4 of 7 - PI3034A, 06/15/03
Item
Clock cycle time
Clock pulse width
(1)
Clock duty cycle
Data setup time
Data hold time
Prohibit crossing time
(2)
EOS rise delay
EOS fall delay
Signal delay time
(3)
Signal settling time
(3)
Symbol
to
tw
tds
tdh
tprh
terdl
tefdl
tdl
tsh
Minimum
1000
250
25
50
20
Mean
Maximum
10000
Units
ns
ns
%
ns
ns
ns
ns
ns
ns
ns
50
75
30
60
70
100
200
Table 5. Timing Symbols and Definition
Notes:
1. Clock pulse width varies with frequency, as it was explained foregoing paragraphs.
2. Prohibit crossing time to insure that two start pulses are not locked into the shift register
during any single scan time.
3. Pixel delay times and settling time depend on the output amplifier. The numbers, which are
given, are measured with an EL2044 amplifier. The faster the amplifier, the faster the signal
will respond. In other words, faster rise and settle times are faster.
Output Circuits for Video Signal
The circuit in following page shows the PI3034A in a CIS module application. It also serves not only a
reference for the above operational explanation given in note 3 under Table 2. Electro-Optical
Characteristics; it further exemplifies a method for interfacing the device in developing a 1728 element,
A4 size CIS module.
Page 5 of 7 - PI3034A, 06/15/03
