DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PLVA2600A series
Low-voltage avalanche regulator
double diodes
Product data sheet
Supersedes data of 1999 May 10
2001 Oct 15
NXP Semiconductors
Product data sheet
Low-voltage avalanche regulator double
diodes
FEATURES
•
Very low dynamic impedance at
low currents: approximately
1
⁄
20
of
conventional series
•
Hard breakdown knee
•
Low noise: approximately
1
⁄
10
of
conventional series
•
Total power dissipation:
max. 250 mW
•
Small tolerances of V
Z
•
Working voltage range:
nom. 5.0 to 6.8 V
•
Non-repetitive peak reverse power
dissipation: max. 30 W.
APPLICATIONS
•
Low current, low power, low noise
applications
•
CMOS RAM back-up circuits
•
Voltage stabilizers
•
Voltage limiters
•
Smoke detector relays.
2
1
PLVA2600A series
MARKING
TYPE NUMBER
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W: Made in China.
PINNING
PIN
1
2
3
cathode (k1)
cathode (k2)
common anode
DESCRIPTION
MARKING CODE
(1)
∗9J
∗9K
∗9L
∗9M
∗9N
∗9O
∗9P
DESCRIPTION
The PLVA2600A series consists of
two high performance voltage
regulator diodes with common
anodes, in small SOT23 plastic SMD
packages.
The series consists of PLVA2650A to
PLVA2668A.
Top view
2
3
3
MAM245
1
Fig.1 Simplified outline (SOT23) and symbol.
2001 Oct 15
2
NXP Semiconductors
Product data sheet
Low-voltage avalanche regulator double
diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZRM
P
ZSM
P
tot
PARAMETER
continuous forward current
repetitive peak working current
non-repetitive peak reverse power
dissipation
total power dissipation
t
p
= 100
μs; δ
= 10%
t
p
= 100
μs;
T
j
= 150
°C
single diode loaded;
T
amb
= 25
°C;
note 1
double diode loaded;
T
amb
= 25
°C;
note 1
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
storage temperature
junction temperature
CONDITIONS
PLVA2600A series
MIN.
−
−
−
−
−
−65
−
MAX.
250
250
30
250
180
+150
150
UNIT
mA
mA
W
mW
mW
°C
°C
2001 Oct 15
3
NXP Semiconductors
Product data sheet
Low-voltage avalanche regulator double
diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
Z
PARAMETER
forward voltage
working voltage
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
working voltage
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
R
Z
dynamic resistance
PLVA2650A
PLVA2653A
PLVA2656A to PLVA2668A
S
Z
temperature coefficient
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
I
R
reverse current
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
V
R
= 80%; V
Z
nominal
−
−
−
−
−
−
−
I
Z
= 250
μA
−
−
−
−
−
−
−
1 kHz superimposed;
I
ZAC
is 10% of I
ZDC
; I
Z
= 250
μA
I
Z
= 10
μA
−
−
−
−
−
−
−
−
−
−
CONDITIONS
I
F
= 10 mA
I
Z
= 250
μA
4.80
5.10
5.40
5.70
6.00
6.30
6.60
−
PLVA2600A series
MIN.
−
TYP.
MAX.
0.9
5.20
5.50
5.80
6.10
6.40
6.70
7.00
−
−
−
−
−
−
−
700
250
100
−
−
−
−
−
−
−
20 000
5 000
1 000
500
100
50
10
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Ω
Ω
Ω
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
nA
nA
nA
nA
nA
nA
nA
5.00
5.30
5.60
5.90
6.20
6.50
6.80
4.30
5.20
5.51
5.85
6.19
6.49
6.80
−
−
−
0.20
1.60
1.90
2.40
2.65
2.90
3.40
−
−
−
−
−
−
−
2001 Oct 15
4
NXP Semiconductors
Product data sheet
Low-voltage avalanche regulator double
diodes
SYMBOL
I
R
PARAMETER
reverse current
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
reverse current
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
ΔV
Z
line regulation
PLVA2659A to PLVA2668A I
LO
= 10
μA;
I
Hi
= 1 mA
PLVA2656A
PLVA2650A
PLVA2653A
V
n
noise voltage density
I
LO
= 50
μA;
I
Hi
= 1 mA
I
LO
= 100
μA;
I
Hi
= 1 mA
I
LO
= 100
μA;
I
Hi
= 1 mA
f = 1 kHz; B = 1 kHz; I
Z
= 250
μA
−
−
−
−
−
V
R
= 90%; V
Z
nominal
−
−
−
−
−
−
−
CONDITIONS
V
R
= 50%; V
Z
nominal
−
−
−
−
−
−
−
PLVA2600A series
MIN.
TYP.
34
22
1.1
0.9
0.9
0.9
0.8
21
3.5
1.3
1.0
0.05
0.04
0.006
−
−
−
−
−
MAX.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
0.1
0.4
0.2
1.0
UNIT
nA
nA
nA
nA
nA
nA
nA
μA
μA
μA
μA
μA
μA
μA
V
V
V
V
μV
-----------
-
Hz
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed circuit-board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2001 Oct 15
5
