PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093
PN4091
PN4092
PN4093
MMBF4091
MMBF4092
MMBF4093
G
D
G
S
TO-92
D
SOT-23
S
Mark: 61J / 61K / 61L
NOTE: Source & Drain
are interchangeable
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabalized amplifiers. Sourced
from Process 51. See J111 for characteristics.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
40
- 40
50
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN4091-4093
625
5.0
125
357
Max
*MMBF4091-4093
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093
N-Channel Switch
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
I
G
= 1.0
µA,
V
DS
= 0
V
DS
= 20 V, I
D
= 1.0 nA
4091
4092
4093
- 40
- 5.0
- 2.0
- 1.0
- 10
- 7.0
- 5.0
- 200
- 400
200
200
200
400
400
400
V
V
V
V
pA
nA
pA
pA
pA
nA
nA
nA
I
DGO
I
D(off)
Drain-Gate Leakage Current
Drain Cutoff Leakage Current
V
DG
= 20 V, I
S
= 0
V
DG
= 20 V, I
S
= 0, T
A
= 150°C
4091
V
DS
= 20 V, V
GS
= - 12 V
4092
V
DS
= 20 V, V
GS
= - 8.0 V
4093
V
DS
= 20 V, V
GS
= - 6.0 V
V
DS
= 20 V, V
GS
= -12 V,
4091
T
A
= 150°C
V
DS
= 20 V, V
GS
= - 8.0 V,
4092
T
A
= 150°C
V
DS
= 20 V, V
GS
= - 6.0 V,
4093
T
A
= 150°C
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 20 V, V
GS
= 0
4091
4092
4093
4091
4092
4093
4091
4092
4093
30
15
8.0
0.2
0.2
0.2
30
50
80
mA
mA
mA
V
V
V
Ω
Ω
Ω
V
DS(
on
)
Drain-Source On Voltage
r
DS(
on
)
Drain-Source On Resistance
I
D
= 6.6 mA, V
GS
= 0
I
D
= 4.0 mA, V
GS
= 0
I
D
= 2.5 mA, V
GS
= 0
I
D
= 1.0 mA, V
GS
= 0
SMALL-SIGNAL CHARACTERISTICS
r
ds(on)
Drain-Source On Resistance
V
DS
= V
GS
= 0, f= 1.0 kHz
4091
4092
4093
V
DS
= 20, V
GS
= 0, f = 1.0 MHz
V
GS
= - 20 V, f = 1.0 MHz
30
50
80
16
5.0
Ω
Ω
Ω
pF
pF
5
C
iss
C
rss
Input Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
t
on
Turn-On Time
I
D(
on)
= 12 mA
I
D(
on)
= 6.0 mA
I
D(
on)
= 3.0 mA
V
GS(
off)
= 12 V
V
GS(
off)
= 6.0 V
V
GS(
off)
= 3.0 V
4091
4092
4093
4091
4092
4093
25
35
60
40
60
80
ns
ns
ns
ns
ns
ns
t
off
Turn-Off Time
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
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failure to perform when properly used in accordance
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effectiveness.
reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G