PSMN013-100BS
21 February 2014
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Product data sheet
1. General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
•
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
3. Applications
•
•
•
•
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 2
T
mb
= 25 °C;
Fig. 1
[1]
Min
-
-
-
-55
Typ
-
-
-
-
Max
100
68
170
175
Unit
V
A
W
°C
Static characteristics
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
Fig. 12; Fig. 13
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 13
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
V
GS
= 10 V; I
D
= 25 A; V
DS
= 50 V;
Fig. 15; Fig. 14
V
GS
= 10 V; I
D
= 25 A; V
DS
= 50 V;
Fig. 14; Fig. 15
-
59
83
nC
-
17
23.8
nC
-
10.8
13.9
mΩ
-
19.4
25
mΩ
Nexperia
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol
E
DS(AL)S
Parameter
non-repetitive drain-
source avalanche
energy
[1]
Conditions
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 68 A;
V
sup
≤ 100 V; unclamped; R
GS
= 50 Ω
Min
-
Typ
-
Max
127
Unit
mJ
Avalanche ruggedness
Continuous current is limited by package
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
[1]
It is not possible to make connection to pin 2.
6. Ordering information
Table 3.
Ordering information
Package
Name
PSMN013-100BS
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
7. Marking
Table 4.
Marking codes
Marking code
PSMN013-100BS
Type number
PSMN013-100BS
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
PSMN013-100BS
Parameter
drain-source voltage
drain-gate voltage
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
≤ 175 °C; T
j
≥ 25 °C; R
GS
= 20 kΩ
All information provided in this document is subject to legal disclaimers.
Min
-
-
©
Max
100
100
Unit
V
V
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 February 2014
2 / 13
Nexperia
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol
V
GS
P
tot
I
D
Parameter
gate-source voltage
total power dissipation
drain current
Conditions
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 2
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
[1]
[1]
Min
-20
-
-
-
-
-55
-55
-
Max
20
170
47
68
272
175
175
260
Unit
V
W
A
A
A
°C
°C
°C
I
DM
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
peak drain current
storage temperature
junction temperature
peak soldering temperature
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 68 A;
V
sup
≤ 100 V; unclamped; R
GS
= 50 Ω
[1]
-
-
68
272
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[1]
120
P
der
(%)
80
-
127
mJ
Continuous current is limited by package
03aa16
80
I
D
(A)
60
003aac512
40
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Continuous drain current as a function of
mounting base temperature
PSMN013-100BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 February 2014
3 / 13
Nexperia
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
10
3
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
003aae168
10
2
t
p
=10 µs
100 µs
10
DC
1
1 ms
10 ms
100 ms
10
- 1
1
10
10
2
V
DS
(V)
10
3
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
1
Z
th (j-mb)
(K/W)
10
-1
δ = 0.5
0.2
0.1
0.05
10
-2
0.02
P
δ=
t
p
T
Conditions
Fig. 4
Min
-
Typ
0.5
Max
0.9
Unit
K/W
R
th(j-a)
minimum footprint; mounted on a
printed-circuit board
-
50
-
K/W
003a a d575
10
-3
s ingle s hot
t
p
t
T
10
-4
1e -6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s )
10
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
All information provided in this document is subject to legal disclaimers.
©
PSMN013-100BS
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 February 2014
4 / 13
Nexperia
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 10; Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 100 V; V
GS
= 0 V; T
j
= 125 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
I
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
Fig. 12; Fig. 13
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
Fig. 12; Fig. 13
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 13
R
G
Q
G(tot)
gate resistance
f = 1 MHz
0.5
1
2
Ω
-
10.8
13.9
mΩ
-
29.5
38.9
mΩ
-
-
-
-
-
-
0.06
10
10
19.4
100
2
100
100
25
µA
µA
nA
nA
mΩ
-
-
4.6
V
2
3
4
V
Min
90
100
1
Typ
-
-
-
Max
-
-
-
Unit
V
V
V
Static characteristics
V
GS(th)
Dynamic characteristics
total gate charge
I
D
= 25 A; V
DS
= 50 V; V
GS
= 10 V;
Fig. 14; Fig. 15
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V
Q
GS
Q
GS(th)
Q
GS(th-pl)
Q
GD
V
GS(pl)
C
iss
C
oss
PSMN013-100BS
-
-
-
-
-
-
59
47.6
13.8
9.2
4.6
17
4.4
3195
221
©
83
66.7
19.4
-
-
23.8
-
4315
300
nC
nC
nC
nC
nC
nC
V
pF
pF
gate-source charge
pre-threshold gate-
source charge
post-threshold gate-
source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
I
D
= 25 A; V
DS
= 50 V; V
GS
= 10 V;
Fig. 14; Fig. 15
I
D
= 25 A; V
DS
= 50 V; V
GS
= 10 V;
Fig. 15; Fig. 14
V
DS
= 50 V;
Fig. 15; Fig. 14
V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 16
-
-
-
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 February 2014
5 / 13
