Data Sheet
PT7C5020AL series
Crystal Oscillator
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Features
•
•
•
R
D
built-in to reduce crystal current in the
oscillator circuit
2.25 to 3.6V operating supply voltage range
Recommended operating oscillation frequency
range(varies with version)
2.5V operating: 60 to 155MHz
3.0V operating: 60 to 170MHz
•
•
•
•
•
•
•
•
•
•
•
Feedback
resistor
with
good
temperature
characteristics built-in
Oscillator capacitors with excellent frequency
response built-in
Standby function (High impedance in standby
mode, oscillator stops)
Low standby current (Power-save pull-up resistor
built-in)
Oscillator detector function
CMOS output duty level (1/2VDD)
50±5% output duty level (at 1/2VDD)
30pF output load(3.3V operation)
Molybdenum-gate CMOS process
-40 to 85℃ operating temperature range
Die form
PT7C
PT7C
Device Type
Clock Series
XO 5020 Series
Series Type
5020
5014
AA
Description
The PT7C5020AL series are high-frequency, 3rd
overtone
crystal
oscillator
module
ICs.
They
incorporate an oscillator circuit and an output butter
that operate at high frequency on a single chip. The
oscillator circuit employs CMOS inverters and a built-
in damping resistor R
D
, reducing the crystal current
compared with existing devices. The damping resistor
R
D
is fabricated using PTI’s unique high-precision-
thin-film
resistor
technology,
which
suppresses
oscillator characteristic variations due to changes in
temperature and voltage to a minimum. The PT7C5020
series can be utilized to construct stable, high-
frequency, 3rd overtone crystal oscillators.
Ordering Information
Part no.
PT7C5020ALxDE
PT7C5020ALxWE
PT7C5020ALxWF
Package type
Die form
Lead free SOIC-8
Wafer form
Note:
Below is the detailed definition of Part No.
Application
•
Used for crystal oscillator
LL
A1
Operating Frequency Range
Suffix
A
B
C
D
Operating Voltage(MHz)
2.5V
3.0V
60 to 90
60 to 80
80 to 125
70 to 115
105 to 135
115 to 145
110 to 155
135 to 170
PT0265(12/07)
1
Ver:1
Data Sheet
PT7C5020AL series
Crystal Oscillator
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Series Configuration
Recommended operating
frequency range
1
[MHz]
2.5V
operation
PT7C5020ALA
PT7C5020ALB
PT7C5020ALC
60 to 80
70 to 115
105 to 135
3.0V
operation
60 to 90
80 to 125
115 to 145
gm
ratio
0.6
0.8
1.0
Oscillator circuit constants
Built-in
Feedback Damping
capacitance
resistance resistance
R
D
[Ω]
R
f
[kΩ]
C
G
[pF] C
D
[pF]
4
3
1
7
3
3
2.5
4.5
3.3
200
57
57
CMOS
Yes
High
impedance
Standby mode
INHN
Input Oscillator
stop
level
function
Output
state
Version
PT7C5020ALD 110 to 155
135 to 170
1.0
1
5
2.2
57
Note1:
The recommended operating frequency is a yardstick value derived from the crystal used for PTI characteristics
authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to
crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated.
Block Diagram
Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
INHN
HIGH (or open)
LOW
Q
fo output frequency
High impedance
Oscillator
Normal operation
Stopped
Power-save Pull-up Resistance
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the
pull-up resistance becomes large to reduce the current consumption during standby.
PT0265(12/07)
2
Ver:1
Data Sheet
PT7C5020AL series
Crystal Oscillator
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Pad Configuration
Sensor
VDD
Q
Die No.
GND
INHN
XT
XTN
Pad Coordinate File
Pad Name
X Coordinate
Y Coordinate
Pad Name
X Coordinate
511.50
593.60
590.10
Y Coordinate
92.90
251.10
457.30
sensor
-50
740.00
XTN
VDD
92.80
513.30
GND
INHN
92.70
309.80
Q
XT
160.50
92.70
Note:
Substrate is connected to GND or VDD or floating.
Die Size:
770µm*790µm (Including scribe line size 100µm*100µm.)
Die Thickness:
220±20µm
Pad Size:
90µm*90µm
Pad/Pin Description
Sym.
INHN
XT
XTN
GND
Q
NC
VDD
Type
I
I
O
P
O
-
P
Description
Output state control input. High impedance when LOW. Power-saving pull-up resistor built
in.
Amplifier input.
Crystal oscillator connected between XT and XTN
Amplifier output.
Ground
Output. Output frequency, high impedance is standby mode.
No connection.
Supply voltage
PT0265(12/07)
3
Ver:1
Data Sheet
PT7C5020AL series
Crystal Oscillator
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Maximum Ratings
Note:
oC to +150oC
Storage Temperature ................................................................................- 65
Stresses greater than those listed under MAXIMUM
Ambient Temperature with Power Applied................................................- 40oC to +85oC RATINGS may cause permanent damage to the
Supply Voltage to Ground Potential (V
DD
to GND) ...............- 0.5V to +7.0V device. This is a stress rating only and functional
DC Input (All Other Inputs except V
DD
& GND) ... -0.5V to V
DD
+0.5V operation of the device at these or any other condi-
DC Output............................................................... -0.5V to V
DD
+0.5V tions above those indicated in the operational sec-
DC Output Current (all outputs) ................................................... 25mA tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
(GND=0V)
Sym.
Parameter
Series
Conditions
C
L
≤
15pF
f
≤
125MHz
PT7C5020A
LA/ALB
V
DD
Supply voltage
C
L
≤
30pF
C
L
≤
15pF
C
L
≤
30pF
C
L
≤
15pF
C
L
≤
15pF
C
L
≤
30pF
C
L
≤
15pF
-
-
Min
2.7
3.0
2.7
1
2.25
2.25
2.25
1
2.7
3.0
2.25
0
-40
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
3.6
3.6
3.6
1
2.75
2.75
2.75
1
3.6
3.6
2.75
V
DD
+85
V
°C
V
Unit
f
≤
106MHz
f
≤
70MHz
f
≤
125MHz
f
≤
170MHz
PT7C5020A
LC/ALD
V
IN
T
A
Input voltage
Operating temperature
All series
All series
f
≤
125MHz
f
≤
155MHz
-
-
Note 1: The output duty cycle variability increases than other condition.
PT0265(12/07)
4
Ver:1
Data Sheet
PT7C5020AL series
Crystal Oscillator
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DC Electrical Characteristics
2.5V operation (V
DD
= 2.25 to 2.75V, GND=0V, T
A
= -40 to 85°C, unless otherwise noted.)
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Parameter
HIGH-level output
voltage
LOW-level output
voltage
HIGH-level input
voltage
LOW-level input
voltage
Output leakage current
Conditions
Q:Measurement cct1, V
DD
=2.25V, I
OH
=8mA
Q:Measurement cct2, V
DD
=2.25V, I
OH
=8mA
INHN
INHN
V
OH
= V
DD
V
OL
= GND
C
L
=15Pf
F=80MHz
PT7C5020ALA
C
L
=30Pf
F=70MHz
C
L
=15Pf
Measurementcct3,
F=106MHz
load cct1
PT7C5020ALB
C
L
=30Pf
INHN=open
F=70MHz
C
L
=15Pf
PT7C5020ALC
F=135MHz
C
L
=15Pf
PT7C5020ALD
F=155MHz
Measurementcct3,INHN=LOW
Q:Measurement cct2,
INHN=LOW
Measurement cct4
Design value
A monitor pattern on a wafer is
tested
Measurement cct5
Design value
A monitor pattern on a wafer is
tested
PT7C5020ALA
PT7C5020ALB
PT7C5020ALC
PT7C5020ALD
PT7C5020ALA
PT7C5020ALB
PT7C5020ALC
PT7C5020ALD
1.75
-
0.7
V
DD
-
-
-
-
-
-
-
-
-
-
2
50
2.12
3.82
2.8
1.87
50
170
48.4
48.4
48.4
8.5
3.40
2.55
0.85
0.85
5.95
2.55
2.55
4.25
Rating
1.95
0.3
-
-
-
-
15
20
20
20
25
30
-
6
100
2.5
4.5
3.3
2.2
100
200
57
57
57
10
4
3
1
1
7
3
3
5
-
0.4
-
0.3
V
DD
10
10
40
50
50
50
60
70
3
12
150
2.88
5.18
3.8
2.53
150
230
65.6
65.6
65.6
11.5
4.60
3.45
1.15
1.15
8.05
3.45
3.45
5.75
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
µA
MΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
Ω
Ω
Ω
Ω
pF
pF
pF
pF
pF
pF
pF
pF
pF
I
DD
Current consumption
I
ST
R
UP1
R
UP2
R
f1
Standby current
INHN pull-up
resistance
AC feedback
resistance
DC feedback
resistance
Oscillator amplifier
output resistance
AC feedback
capacitance
R
f2
R
D
C
f
Design value. A monitor pattern on a wafer is tested
Design value.
A monitor pattern on a wafer is
tested
PT7C5020ALA
PT7C5020ALB
PT7C5020ALC
PT7C5020ALD
PT7C5020ALA
PT7C5020ALB
PT7C5020ALC
PT7C5020ALD
C
G
Built-in capacitance
C
D
Design value.
A monitor pattern on a wafer is
tested
PT0265(12/07)
5
Ver:1
嵌入式系统
