e
PTB 20155
9 Watts, 610–960 MHz
UHF Power Transistor
Description
The 20155 is an NPN common base RF power transistor intended
for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
9 Watts, 610–960 MHz
Class C Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Gain & Return Loss vs. Frequency
10
8
(as measured in a broadband circuit)
Gain (dB)
0
-5
Gain (dB)
6
4
2
0
700
Return Loss (dB)
V
CC
= 28 V
Pin = 9 W
Return Loss (dB)
-10
-15
-20
-25
950
201
55
LOT
COD
E
750
800
850
900
Frequency (MHz)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4
6.7
65
0.37
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20155
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Output Capacitance
Collector Cut-off Current
(100% Tested)
e
Conditions
V
BE
= 0 V, I
C
= 5 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 300 mA
V
CB
= 28 V, I
E
= 0 A, f = 1 MHz
V
CB
= 28 V, I
E
= 0 A
Symbol
V
(BR)CES
V
(BR)EBO
h
FE
C
ob
I
CBO
Min
50
3.5
25
—
—
Typ
—
—
—
10.5
—
Max
—
—
100
11
1.5
Units
Volts
Volts
—
pF
mA
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 28 Vdc, Pout = 9 W, f = 960 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, Pout = 9 W, f = 960 MHz)
Symbol
G
pe
η
C
Min
8.0
45
Typ
9.0
53
Max
—
—
Units
dB
%
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 28 Vdc, Pout = 9 W)
Z Source
Z Load
Frequency
MHz
850
900
960
R
4.4
6.4
6.4
Z Source
jX
-10.7
-10.0
-14.3
R
8.6
9.3
7.8
Z Load
jX
3.6
4.9
3.1
2
e
Typical Performance
Gain & Efficiency vs. Power Out
10
8
6
60
50
40
30
PTB 20155
4
2
0
0
2
4
6
8
10
V
CC
= 28 V
f = 960 MHz
20
10
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20155 Uen Rev. C 09-28-98
3
Efficiency (%)
Gain (dB)
