e
PTB 20180
2.5 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20180 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
2.5 Watts, 1.8–2.0 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
1.0
Output Power (Watts)
0.8
0.6
0.4
20
18
0
LO
TC
OD
E
V
CC
= 26 V
0.2
0.0
0.00
I
CQ
= 20 mA
f = 2 GHz
0.02
0.04
0.06
0.08
0.10
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.5
10.0
0.057
–40 to +150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20180
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
Ω
V
BE
= 0 V, I
C
= 5 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 250 mA
Symbol
V
(BR)CER
V
(BR)CES
V
(BR)EBO
h
FE
Min
50
50
4
20
Typ
—
—
5
40
Max
—
—
—
—
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 1.0 W, I
CQ
= 20 mA, f = 2.0 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 20 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 20 mA,
f = 2.0 GHz—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
Ψ
Min
8
2.5
—
Typ
9.5
4.0
—
Max
—
—
5:1
Units
dB
Watts
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 20 mA)
Z Source
Z Load
Frequency
GHz
1.8
1.9
2.0
R
28.3
21.7
17.2
Z Source
jX
-18.1
-8.0
5.9
R
8.5
8.0
6.5
Z Load
jX
8.2
12.5
16.3
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20180 Uen Rev. D 09-28-98
2
5/19/98
微控制器 MCU
