PTFA092201E
PTFA092201F
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092201E and PTFA092201F are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092201E
Package H-36260-2
PTFA092201F
Package H-37260-2
2-Carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
60
50
-30
Features
•
•
•
IMD (dBc), ACPR (dBc)
Pb-free, RoHS-compliant and thermally-enhanced
packages
Broadband internal matching
Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.5 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
Typical CW performance, 960 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.5 dB
- Efficiency = 59%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
-35
Drain Efficiency (%)
IMD
40
30
20
10
0
30
35
40
ACPR
-40
-45
-50
•
Gain
Efficiency
45
50
-55
-60
•
•
•
Output Power, Avg. (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 55 W average
ƒ
1
= 950 MHz, ƒ
2
= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
Min
—
—
—
Typ
–37
18.5
30
Max
—
—
—
Unit
dBc
dB
%
η
D
All published data at T
CASE
= 25 °C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 03.1, 2009-02-20
PTFA092201E
PTFA092201F
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 220 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17.5
42
—
Typ
18.5
44
—
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.04
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1850 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25 °C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70 °C, 220 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
700
4.0
–40 to +150
0.25
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA092201E
PTFA092201F
V4
V4
Package Outline
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange,
single-ended
Shipping
Tray
Tray
Marking
PTFA092201E
PTFA092201F
Thermally-enhanced earless flange,
single-ended
*See Infineon distributor for future availability.
2 of 11
Data Sheet
Rev. 03.1, 2009-02-20
PTFA092201E
PTFA092201F
Typical Performance
(data taken in a production test fixture)
2-Carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
60
-30
2-Carrier WCDMA (high gain tune)
V
DD
= 30 V, I
DQ
= 2000 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
35
-30
30
25
20
15
10
5
0
30
35
T
CASE
= 25°C
Efficiency (%), Gain (dB)
Efficiency (%), Gain (dB)
IMD (dBc), ACPR (dBc)
IMD
40
30
20
10
0
30
35
40
45
50
-40
-45
-50
Gain
IMD
ACPR
-40
-45
-50
-55
ACPR
Gain
Efficiency
-55
-60
Efficiency
40
45
50
-60
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Power Sweep
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ
1
= 889 MHz, ƒ
2
= 894,
PAR = 7.1 dB each carrier at 0.01% probability
0
-10
35
22
21
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz
70
60
50
Efficiency
30
Drain Efficiency (%)
ACPR (dBc)
-20
-30
-40
-50
-60
0
10
20
30
40
50
25
20
20
Gain (dB)
19
18
17
16
15
30
Gain
40
30
20
ACPR
15
10
5
Efficiency
35
40
45
50
55
60
10
0
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03.1, 2009-02-20
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
50
T
CASE
= 90°C
-35
-35
PTFA092201E
PTFA092201F
Typical Performance
(cont.)
CW (high gain tuned)
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 2000 mA, ƒ = 960 MHz
22
21
20
70
50
0
2-Tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 110 W
Efficiency (%), Gain (dB)
60
45
40
35
30
25
20
Efficiency
Return Loss
-5
Drain Efficiency (%)
Gain
19
18
17
16
15
30
35
40
45
50
55
60
40
30
20
-15
-20
-25
-30
Efficiency
10
0
15
880
Gain
900
920
940
960
980
-35
1000
Output Power (dBm)
Frequency (MHz)
2-Tone Broadband (tuned for high gain)
V
DD
= 30 V, I
DQ
= 2000 m A, P
OUT
= 80 W
Power Sweep, CW
V
DD
= 30 V, ƒ = 960 MHz,
series show I
DQ
50
45
0
20
Efficiency (%), Gain (dB)
Efficiency
Return Los s
-5
Return Loss (dB)
Power Gain (dB)
40
35
30
25
20
15
880
-10
-15
-20
-25
19
2300 mA
1550 mA
18
1450 mA
Gain
900
920
940
960
980
-30
-35
1000
17
30
35
40
45
50
55
Frequency (MHz)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03.1, 2009-02-20
Return Loss (dB)
50
-10
Gain (dB)
PTFA092201E
PTFA092201F
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ
1
= 960, ƒ2 = 959 MHz
Intermodulation Distortion vs. Output Power
(high gain tune)
V
DD
= 30 V, I
DQ
= 2000 mA, ƒ
1
= 859, ƒ
2
= 960 MHz
-20
-30
-40
-50
-60
-70
-80
30
35
40
45
50
55
-20
-30
3rd Order
IMD (dBc)
IMD (dBc)
-40
-50
-60
-70
-80
30
3rd Order
5th
5th
7th
7th
35
40
45
50
55
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Output Power vs. Supply Voltage
I
DQ
= 1850 mA, ƒ = 960 MHz
IS-95 CDMA Performance
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz
55
40
-40
Output Power (dBm)
54
Drain Efficiency (%)
30
-50
53
20
Efficiency
Alt
1
1.98 MHz
-60
52
10
-70
51
24
26
28
30
32
34
36
0
25
30
35
40
45
50
-80
Supply Voltage (V)
Output Power, Avg. (dBm)
Data Sheet
5 of 11
Rev. 03.1, 2009-02-20
Adj. Ch. Power Ratio (dBc)
Adj 750 kHz
