PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 1930 – 1990 MHz
Description
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA192001E
Package H-36260-2
PTFA192001F
Package H-37260-2
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 1960 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-25
30
d
•
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
-30
-35
-40
-45
-50
-55
34
36
IM3
in
ue
25
20
15
10
5
0
Efficiency
sc
o
38
40
42
nt
ACPR
44
46
48
Output Power, avg. (dBm)
di
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
pr
•
•
•
•
•
•
•
2-Carrier WCDMA Drive-up
Features
Pb-free, RoHS-compliant and thermally-enhanced
packages
Broadband internal matching
Typical two-carrier WCDMA performance at 1990
MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 15.9 dB
- Efficiency = 27%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
Typical single-carrier WCDMA performance at 1960
MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 48.5 dBm
- Linear Gain = 15.9 dB
- Efficiency = 34%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –40 dBc
Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 57%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
od
*See Infineon distributor for future availability.
Rev. 08,
2017-07-19
uc
t
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements
(tested in Infineon test fixture)
ƒ
1
= 1985 MHz, ƒ
2
= 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
V
DD
= 30 V, I
DQ
= 1.8 A, P
OUT
= 50 W average
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15.3
26.5
—
Typ
15.9
27
–36
Max
—
—
–34
Unit
dB
%
dBc
η
D
IMD
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
od
Min
—
—
—
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 200 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
uc
Typ
15.9
41
–30
t
—
—
—
—
65
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
V
GS
= 0 V, I
DS
= 10 mA
in
Conditions
ue
d
pr
η
D
IMD
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
sc
o
nt
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.8 A
V
GS
= 10 V, V
DS
= 0 V
0.05
2.5
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
di
Symbol
V
DSS
V
GS
T
J
P
D
Value
Unit
V
V
°C
W
W/°C
°C
°C/W
Rev. 08, 2017-07-19
–0.5 to +12
200
625
3.57
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
Data Sheet
2 of 11
T
STG
R
θJC
–40 to +150
0.28
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA192001E
PTFA192001F
V4
V4
Package Type
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA192001E
PTFA192001F
Typical Performance
(data taken in a production test fixture)
Intermodulation Distortion Products v. Output Power
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ
1
= 1957.5 MHz, ƒ
2
= 1962.5 MHz
-20
Broadband Performance
40
od
Efficiency
Gain
1890
1920
V
DD
= 30 V, I
DQ
= 1600 mA, P
OUT
= 50 W
uc
1950
t
-5
Intermodulation Distortion (dBc)
pr
35
30
25
20
15
10
1860
Gain (dB), Efficiency (%)
-30
d
IM3
-40
IM5
-15
-20
-25
-30
-35
2040
-50
IM7
-60
10
100
nt
in
1000
1980
2010
Output Power, PEP (W)
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 08, 2017-07-19
di
sc
o
Input Return Loss (dB)
Up
Low
Return Loss
-10
ue
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1800 mA, ƒ = 1990 MHz
-20
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 30 V I
DQ
= 1800 m A , ƒ = 1960 MHz,
P
OUT
= 53 dBm PEP
65
17
16
Intermodulation Distortion (dBc)
Gain (dB)
15
14
13
45
35
-35
-40
-45
-50
-55
3rd Order
od
0
5
10
15
20
12
0
40
80
120
160
200
240
15
pr
Efficiency
T
CASE
= 25°C
T
CASE
= 90°C
25
uc
5th
7th
25
30
35
40
Gain
Drain Efficiency (%)
-30
Output Power (W)
2-Tone Drive-up
in
ue
Two-carrier WCDMA at Selected Biases
V
DD
= 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-30
-35
2.0 A
1.8 A
2.2 A
-25
sc
o
nt
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
45
40
35
Intermodulation Distortion (dBc)
-30
-35
-40
-45
-50
-55
-60
42
44
46
Efficiency
IM3
3rd Order IMD (dBc)
Drain Efficiency (%)
di
IM5
IM7
30
25
20
15
10
d
-40
-45
-50
-55
34
36
Tone Spacing (MHz)
1.4 A
1.6 A
48
50
52
54
56
38
40
t
42
44
46
55
-25
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
4 of 11
Rev. 08, 2017-07-19
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
100
10
Power Gain vs. Power Sweep (CW) over
Temperature
V
DD
= 30 V, I
DQ
= 1500 m A, ƒ = 1990 MHz
18
17
-15C
V
DD
= 30 V, I
DQ
= 1500 mA, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
Power Gain (dB)
Probability (%)
1
0.1
0.01
48 dBm
52 dBm
50.5 dBm
50 dBm
46 dBm
Input
16
15
14
13
12
85C
0.001
1
2
3
4
5
6
7
8
pr
1
od
10
100
1000
Voltage Sweep
in
ue
sc
o
-10
d
50
1.03
Peak-to-Average (dB)
nt
I
DQ
= 1800 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Gain (dB), Drain Efficiency (%)
Normalized Bias Voltage (V)
3rd Order Intermodulation
Distortion (dBc)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
-20
40
-30
di
Efficiency
30
IM3 Up
-40
20
Gain
-50
23
25
27
29
31
33
10
Case Temperature (°C)
Supply Voltage (V)
Data Sheet
5 of 11
uc
Output Power (W)
25C
t
Rev. 08, 2017-07-19
NXP MCU
