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PTVA120501EAV1R2

RF Power Field-Effect Transistor,

器件类别:分立半导体    晶体管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
,
Reach Compliance Code
compliant
峰值回流温度(摄氏度)
NOT SPECIFIED
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
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PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET
50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power ampli-
fier applications in the 1200 to 1400 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120501EA
Package H-36265-2
Features
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
300 µs pulse width, 10% duty cycle
60
55
Efficiency
Power Sweep, Pulsed RF
70
Broadband input matching
High gain and efficiency
Typical Pulsed CW performance, 1200 – 1400MHz,
50 V, 300 µs pulse width, 10 % duty cycle, class AB
- Output power at P
1dB
=
54 W
- Efficiency = 55%
- Gain = 16 dB
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
Capable of withstanding a
10:1 load
mismatch
(all phase angles) at 50 W peak under RF pulse,
300 μS, 10% duty cycle.
Drain Efficiency (%)
60
50
Output Power
P
OUT
(dBm)
50
45
40
35
30
40
30
20
10
1200 MHz
1300 MHz
1400 MHz
18
22
26
30
34
a120501ea_g1-1
38
P
IN
(dBm)
RF Characteristics
Pulsed RF Performance
(tested in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50
W, ƒ
1
= 1200 MHz, ƒ
2
= 1300 MHz,
ƒ
3
= 1400 MHz, 300 μs pulse width, 10 % duty
cycle
Characteristic
Gain
Drain Efficiency
Return Loss
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
16.5
46
Typ
17
50
–10
Max
–7
Unit
dB
%
dB
h
D
IRL
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-05-26
PTVA120501EA
RF Characteristics
Typical RF Performance
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 50 mA, Input signal (t
r
= 7 ns, t
f
= 8 ns), 300 μs pulse width,
10%
duty cycle, class AB test
Mode of Op-
eration
Pulsed RF
Pulsed RF
Pulsed RF
ƒ
(MHz)
1200
1300
1400
IRL
(dB)
–8
–10
–8
P
1dB
Gain
(dB)
16
16
16
Eff
(%)
56
57
55
P
OUT
(W)
60
60
54
Gain
(dB)
14
14
14
P
3dB
Eff
(%)
58
58
57
P
OUT
(W)
78
78
57
Max
P
droop (pulse)
dB @ 50 W
0.20
0.20
0.15
t
r (ns)
@
50 W*
5
5
5
t
f (ns)
@
50 W*
<2
<2
<2
* Note = t
r
and t
f
are defined as
D
between input and output rise and fall times
Typical RF Performance
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 50 mA, 30 ms pulse width, 33% duty cycle, class AB test
Mode of Op-
eration
Pulsed RF
Pulsed RF
Pulsed RF
ƒ
(MHz)
1200
1300
1400
P
1dB
Gain
(dB)
16
16
16
Eff
(%)
57
56
49
P
OUT
(W)
57
55
50
Gain
(dB)
14
14
14
P
3dB
Eff
(%)
59
58
50
P
OUT
(W)
75
75
55
P
droop (pulse)
dB @ 50 W
0.3
0.3
0.2
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 105 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
105
3.0
Typ
0.4
3.5
Max
1
10
4.0
1
Unit
V
μA
μA
W
V
μA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 50 V, I
DQ
= 50 mA
V
GS
= 10 V, V
DS
= 0 V
Data Sheet
2 of 10
Rev. 02.1, 2016-05-26
PTVA120501EA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance
(T
CASE
= 70°C, 50 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
105
–6 to +12
200
–65 to +150
1.37
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTVA120501EA V1 R0
PTVA120501EA V1 R2
Order Code
PTVA120501EAV1R0XTMA1
PTVA120501EAV1R2XTMA1
Package Description
H-36265-2, bolt-down
H-36265-2, bolt-down
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Typical Performance
(data taken in a production test fixture)
Pulsed CW Performance
V
DD
= 50 V, I
DQ
= 50 mA
Small Signal CW Performance
Gain & Input Return Loss
V
DD
= 50 V, I
DQ
= 1.5 A
19
18
70
19
Gain
-1
-5
-9
-13
-17
-21
1550
Efficiency (%)
17
Gain (dB)
17
16
15
Gain
50
40
30
1400 MHz
1200 MHz
15
13
11
9
14
13
Efficiency
20
10
IRL
1300 MHz
a120501ea_gcw-1
36
38
40
42
44
46
48
a120501ea_gcw-2
950
1050
1150
1250
1350
1450
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 02.1, 2016-05-26
Input Return Loss (dB)
60
Power Gain (dB)
PTVA120501EA
Typical Performance
(cont.)
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
300 µs pulse width, 10% duty cycle
60
55
Efficiency
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
300 µs pulse width, 10% duty cycle
70
19
Power Sweep, Pulsed RF
Drain Efficiency (%)
60
50
Output Power
18
Gain
P
OUT
(dBm)
Gain (dB)
50
45
40
35
30
17
16
15
14
1200 MHz
1300 MHz
1400 MHz
a120501ea_g1-2
40
30
20
10
1200 MHz
1300 MHz
1400 MHz
18
22
26
30
34
a120501ea_g1-1
38
18
22
26
30
34
38
P
IN
(dBm)
P
IN
(dBm)
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
300 µs pulse width, 10% duty cycle
18.0
Gain
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
300 µs pulse width, 10% duty cycle
58
0.25
-5
-10
-15
-20
IRL
Power Sweep, Pulsed RF
Drain Efficiency (%)
17.8
56
Power Droop (dB)
0.20
0.15
0.10
0.05
0.00
1150
Power Droop
Gain (dB)
17.6
54
17.4
Efficiency
52
-25
-30
1450
17.2
1150
a120501ea_g1-3
1200
1250
1300
1350
1400
50
1450
a120501ea_g1-4
1200
1250
1300
1350
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
4 of 10
Rev. 02.1, 2016-05-26
IRL (dB)
PTVA120501EA
Typical Performance
(cont.)
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
16 ms pulse width, 50% duty cycle
60
55
Efficiency
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
16 ms pulse width, 50% duty cycle
70
19
Power Sweep, Pulsed RF
Drain Efficiency (%)
60
50
18
Gain
P
OUT
(dBm)
Gain (dB)
50
45
40
35
30
18
22
26
30
Output Power
1200 MHz
1300 MHz
1400 MHz
a120501ea_g4-1
17
16
1200 MHz
40
30
20
38
10
15
14
1300 MHz
1400 MHz
a120501ea_g4-2
34
18
22
26
30
34
38
P
IN
(dBm)
P
IN
(dBm)
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
16 ms pulse width, 50% duty cycle
17.4
Gain
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
16 ms pulse width, 50% duty cycle
60
0.25
Power Droop
Power Sweep, Pulsed RF
-5
-10
-15
-20
IRL
17.2
58
Drain Efficiency (%)
Power Droop (dB)
0.20
0.15
0.10
0.05
0.00
1150
Gain (dB)
17.0
56
16.8
Efficiency
54
-25
-30
1450
16.6
1150
a120501ea_g4-3
1200
1250
1300
1350
1400
52
1450
a120501ea_g4-4
1200
1250
1300
1350
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
5 of 10
Rev. 02.1, 2016-05-26
IRL (dB)
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参数对比
与PTVA120501EAV1R2相近的元器件有:PTVA120501EAV1R0、PTVA120501EAV1R2XTMA1。描述及对比如下:
型号 PTVA120501EAV1R2 PTVA120501EAV1R0 PTVA120501EAV1R2XTMA1
描述 RF Power Field-Effect Transistor, RF Power Field-Effect Transistor, RF Power Field-Effect Transistor,
是否Rohs认证 符合 符合 符合
Reach Compliance Code compliant compliant compliant
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
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