Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 3-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, PLASTIC, SIL, 8 PIN
厂商名称:Panasonic(松下)
厂商官网:http://www.panasonic.co.jp/semicon/e-index.html
下载文档型号 | PU3212 | PU4512 | PU4212 |
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描述 | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 3-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, PLASTIC, SIL, 8 PIN | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, PLASTIC, SIL, 10 PIN | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, PLASTIC, SIL, 10 PIN |
厂商名称 | Panasonic(松下) | Panasonic(松下) | Panasonic(松下) |
包装说明 | IN-LINE, R-PSIP-T8 | IN-LINE, R-PSIP-T10 | IN-LINE, R-PSIP-T10 |
针数 | 8 | 10 | 10 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 3 A | 3 A | 3 A |
集电极-发射极最大电压 | 80 V | 80 V | 80 V |
配置 | COMMON EMITTER, 3 ELEMENTS | 2 BANKS, COMMON EMITTER, 2 ELEMENTS | COMMON EMITTER, 4 ELEMENTS |
最小直流电流增益 (hFE) | 60 | 60 | 60 |
JESD-30 代码 | R-PSIP-T8 | R-PSIP-T10 | R-PSIP-T10 |
元件数量 | 3 | 4 | 4 |
端子数量 | 8 | 10 | 10 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE |
极性/信道类型 | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 30 MHz | 30 MHz | 30 MHz |