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PXTA92,115

Bipolar Transistors - BJT TRANS HV TAPE-7

器件类别:分立半导体    晶体管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
Brand Name
NXP Semiconductor
是否Rohs认证
符合
零件包装代码
SOT-89
包装说明
PLASTIC, SC-62, 3 PIN
针数
3
制造商包装代码
SOT89
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
6 pF
集电极-发射极最大电压
300 V
配置
SINGLE
最小直流电流增益 (hFE)
25
JEDEC-95代码
TO-243AA
JESD-30 代码
R-PSSO-F3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
1 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
FLAT
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
50 MHz
VCEsat-Max
0.5 V
Base Number Matches
1
文档预览
PXTA92
300 V, 100 mA PNP high-voltage transistor
Rev. 6 — 27 September 2011
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage transistor in a medium power and flat lead SOT89 (SC-62)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PXTA42.
1.2 Features and benefits
High breakdown voltage
AEC-Q101 qualified
Medium power and flat lead SMD plastic package
1.3 Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
V
CE
=
10
V;
I
C
=
10
mA
Conditions
open base
Min
-
-
-
40
Typ
-
-
-
-
Max
300
100
200
-
Unit
V
mA
mA
Nexperia
PXTA92
300 V, 100 mA PNP high-voltage transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
collector
base
3
2
1
3
1
sym079
Simplified outline
Graphic symbol
2
3. Ordering information
Table 3.
Ordering information
Package
Name
PXTA92
SC-62
Description
Version
plastic surface-mounted package; exposed die pad SOT89
for good heat transfer; 3 leads
Type number
4. Marking
Table 4.
PXTA92
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
*2D
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
300
300
5
100
200
100
1300
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
C
C
C
T
amb
25
C
[1]
-
-
65
65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 6 cm
2
.
PXTA92
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 27 September 2011
2 of 9
Nexperia
PXTA92
300 V, 100 mA PNP high-voltage transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
96
16
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
Conditions
Min
-
-
25
40
25
-
-
50
Typ
-
-
-
-
-
-
-
-
Max
250
100
-
-
-
500
900
-
mV
mV
MHz
Unit
nA
nA
collector-base cut-off V
CB
=
200
V; I
E
= 0 A
current
emitter-base cut-off
current
DC current gain
V
EB
=
3
V; I
C
= 0 A
V
CE
=
10
V; I
C
=
1
mA
V
CE
=
10
V;
I
C
=
10
mA
V
CE
=
10
V;
I
C
=
30
mA
V
CEsat
V
BEsat
f
T
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequency
I
C
=
20
mA; I
B
=
2
mA
I
C
=
20
mA; I
B
=
2
mA
V
CE
=
20
V;
I
C
=
10
mA;
f = 100 MHz
C
c
collector capacitance V
CB
=
20
V;
I
E
= i
e
= 0 A; f = 1 MHz
-
-
6
pF
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
PXTA92
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 27 September 2011
3 of 9
Nexperia
PXTA92
300 V, 100 mA PNP high-voltage transistor
9. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
0.48
0.35
3
0.44
0.23
06-08-29
1
0.53
0.40
1.5
Dimensions in mm
2
3
Fig 1.
Package outline PXTA92 (SOT89/SC-62)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PXTA92
Package Description
SOT89
8 mm pitch, 12 mm tape and reel; T1
8 mm pitch, 12 mm tape and reel; T3
[1]
[2]
[3]
For further information and the availability of packing methods, see
Section 14.
T1: normal taping
T3: 90 taping
[2]
[3]
Packing quantity
1000
-115
-120
4000
-135
-
PXTA92
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 27 September 2011
4 of 9
Nexperia
PXTA92
300 V, 100 mA PNP high-voltage transistor
11. Soldering
4.75
2.25
2
1.9
1.2
0.85
0.2
solder lands
1.7
0.5
4.85
solder resist
solder paste
occupied area
1.2
4.6
1
(3×)
1.1
(2×)
Dimensions in mm
1.5
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig 2.
Reflow soldering footprint PXTA92 (SOT89/SC-62)
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.5
(2×)
0.7
5.3
sot089_fw
1.9
Fig 3.
Wave soldering footprint PXTA92 (SOT89/SC-62)
PXTA92
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 27 September 2011
5 of 9
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