UNISONIC TECHNOLOGIES CO., LTD
PZTA42/43
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC
PZTA42/43
are high voltage transistors, designed for
telephone switch and high voltage switch.
NPN SILICON TRANSISTOR
FEATURES
* Collector-emitter voltage: V
CEO
=300V (UTC PZTA42)
V
CEO
=200V (UTC PZTA43)
* High current gain
* Complement to UTC PZTA92/93
* Collector power dissipation: P
C(MAX)
=1W
1
SOT-223
Lead-free:
PZTA42L / PZTA43L
Halogen-free:PZTA42G / PZTA43G
ORDERING INFORMATION
Normal
PZTA42-AA3-R
PZTA43-AA3-R
Ordering Number
Lead Free
PZTA42L-AA3-R
PZTA43L-AA3-R
Halogen Free
PZTA42G-AA3-R
PZTA43G-AA3-R
Package
SOT-223
SOT-223
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R207-005.D
PZTA42/43
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
SYMBOL
NPN SILICON TRANSISTOR
RATINGS
UNIT
PZTA42
300
V
Collector-Base Voltage
V
CBO
PZTA43
200
V
PZTA42
300
V
Collector-Emitter Voltage
V
CEO
PZTA43
200
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
500
mA
Collector Power Dissipation
Pc
1
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
TEST CONDITIONS
PZTA42
I
C
=100μA, I
E
=0
PZTA43
PZTA42
I
C
=1mA, I
B
=0
PZTA43
I
E
=100μA, I
C
=0
V
CB
=200V, I
E
=0
PZTA42
PZTA43
V
CB
=160V, I
E
=0
V
BE
=6V, I
C
=0
PZTA42
V
BE
=4V, I
C
=0
PZTA43
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
30mA
V
CE(SAT)
I
C
=20mA, I
B
=2mA
V
BE(SAT)
I
C
=20mA, I
B
=2mA
f
T
V
CE
=20V, I
C
=10mA, f=100MHz
PZTA42
C
cb
V
CB
=20V, I
E
=0 f=1MHz
PZTA43
MIN
300
200
300
200
6
TYP
MAX
UNIT
V
V
V
V
V
nA
nA
nA
nA
100
100
100
100
80
80
80
0.2
0.90
50
3
4
300
V
V
MHz
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-005.D
PZTA42/43
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
DC current Gain, h
FE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Current Gain Bandwidth Product (MHz)
V
CE(SAT)
, V
BE(SAT)
(V)
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