MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50DY-24B
•
•
•
•
•
I
C
Collector current ..........................
50A
V
CEX
Collector-emitter voltage .........
1200V
h
FE
DC current gain.............................
750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107.5
93±
0.25
12
E2 B2
2–φ6.5
4
B2
E2
18.5
34.5
13
C1
C2E1
E2
C2E1
23.5
23
E2
23
C1
B1 E1
5
4
E1
B1
3–M5
22
8
15
8
22
Tab#110, t=0.5
21
37.2
28.5
–0.5
LABEL
6.5MIN.
+1
(23)
(8)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
1200
1200
1200
7
50
50
400
3
50
–40~+150
–40~+125
Charged part to case, AC for 1 minute
Main terminal screw M5
2500
1.47~1.96
15~20
1.96~2.94
20~30
250
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Switching time
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
(Tj=25°C, unless otherwise noted)
Limits
Test conditions
V
CE
=1200V, V
EB
=2V
V
CB
=1200V, Emitter open
V
EB
=7V
I
C
=50A, I
B
=67mA
–I
C
=50A (diode forward voltage)
I
C
=50A, V
CE
=4V
Min.
—
—
—
—
—
—
750
—
V
CC
=600V, I
C
=50A, I
B1
=100mA, I
B2
=–1.0A
—
—
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
50
4.0
4.0
1.8
—
2.5
15
3.0
0.31
1.2
0.13
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/
W
°C/
W
°C/
W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
T
j
=25°C
10
4
7
5
4
3
2
10
3
7
5
4
3
2
10
2
10
0
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
T
j
=25°C
T
j
=125°C
V
CE
=10V
COLLECTOR CURRENT I
C
(A)
80
I
B
=67mA
60
DC CURRENT GAIN h
FE
I
B
=200mA
I
B
=400mA
40
I
B
=20mA
I
B
=10mA
V
CE
=4V
20
0
0
1
2
3
4
5
2 3 4 5 7 10
1
2 3 4 5 7 10
2
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
0
7
5
4
3
2
10
–1
7
5
4
3
2
10
–2
2.8
3.2
3.6
4.0
4.4
4.8
V
CE
=4V
T
j
=25°C
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
V
CE(sat)
10
0
7
5
4
3
I
B
=67mA
2
T
j
=25°C
10
–1
10
0
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
V
BE(sat)
BASE CURRENT I
B
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
3
2
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
t
on
, t
s
, t
f
(µs)
4
3
2
I
C
=30A
I
C
=50A
SWITCHING TIME
V
CC
=600V
10
1
I
B1
=100mA
7 I
B2
=–1A
5
T
j
=25°C
4
T
j
=125°C
3
2
10
0
7
5
4
3
t
s
1
0
10
–3
2 3 4 5 710
–2
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
T
j
=25°C
T
j
=125°C
t
f
t
on
3 4 5 7 10
1
2 3 4 5 7 10
2
2 3
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
REVERSE BIAS SAFE OPERATING AREA
120
t
s
, t
f
(µs)
t
s
10
1
7
5
4
3
2
COLLECTOR CURRENT I
C
(A)
2
T
j
=125°C
I
B2
=–1A
100
80
60
40
20
0
SWITCHING TIME
t
f
V
CC
=600V
10
0
I
C
=50A
7 I
B1
=100mA
T
j
=25°C
5
4
T
j
=125°C
3
10
–1
2 3 4 5 7 10
0
2 3 4 5 7 10
1
0
200 400 600 800 1000 1200 1400
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
FORWARD BIAS SAFE OPERATING AREA
2
100
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
1m
S
50µ
S
100µ
S
DERATING FACTOR (%)
10
2
7
5
3
2
10
1
7
5
3
2
200µ
S
90
80
70
60
50
40
30
20
10
0
0
20
40
60
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
DC
10
0
7
5 T
C
=25°C
NON–REPETITIVE
3
2
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
2
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
CASE TEMPERATURE
T
C
(°C)
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 5 710
1
2 3 5 7 10
2
0.5
0.4
Z
th (j–c)
(°C/ W)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
0.3
0.2
0.1
0
10
–3
2 3 5 7 10
–2
2 3 5 710
–1
2 3 5 7 10
0
0
0.4
0.8
1.2
T
j
=25°C
T
j
=125°C
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
SURGE COLLECTOR REVERSE CURRENT
–I
CSM
(A)
500
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10
2
7
5
4
3
2
10
0
400
I
rr
(A), Q
rr
(µc)
I
rr
t
rr
(µs)
Feb.1999
300
200
100
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
1
7
Q
rr
5
4
3
t
rr
V
CC
=600V
2
I
B1
=100mA
I
B2
=–1A
10
0
10
0
2 3 4 5 7 10
1
10
0
10
–1
2 3 4 5 7 10
2
T
j
=25°C
T
j
=125°C
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT I
F
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
10
0
2 3 5 7 10
0
2 3
2.0
1.8
1.6
Z
th (j–c)
(°C/ W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (s)
