Boost type Voltage Regulator with Reset
R1151N SERIES
NO. EA-092-120404
OUTLINE
The R1151N Series are CMOS-based boost type voltage regulator ICs with high output voltage accuracy, low sup-
ply current, and high ripple rejection. Each of these voltage regulator controllers consists of a voltage reference unit,
an error amplifier, comparators, resistors for output and reset voltage setting, a current limit protection circuit, and a
chip enable circuit.
In addition to low consumption current by CMOS process, the chip enable function prolongs the battery life. Dy-
namic response and ripple rejection of the R1151N Series are excellent, further these are low noise type, plus maxi-
mum operating input voltage tolerance is up to 18.5V thus these ICs are very suitable for the power supply for hand-
,
held equipment and other power management applications using AC adapter input voltage.
The output voltage of these ICs is internally fixed with high accuracy. Since the package for these ICs is SOT-23-6
(Mini-mold) package, high density mounting of the ICs on boards is possible.
FEATURES
•
Ultra-Low Supply Current ............................................... Typ. 70µA (I
OUT
=0mA)
•
Standby Mode ................................................................... Typ. 0.1µA
•
Low Dropout Voltage ....................................................... Typ. 0.1V (I
OUT
=100mA *Depends on External Transistor)
•
High Ripple Rejection ...................................................... Typ. 60dB (f=1kHz)
•
Low Temperature-Drift Coefficient of Output Voltage ....... Typ.±100ppm/°C
•
High Output Voltage Accuracy ........................................ ±2.0%
•
Excellent Dynamic Response
•
Small Package .................................................................. SOT-23-6 (Mini-mold)
•
Output Voltage.................................................................. Stepwise setting with a step of 0.1V in the range of 2.5V to 9.0V
•
Built-in chip enable circuit (2 types; A: active low, B: active high)
•
Output Capacitor .............................................................. Tantalum type recommendation (or Ceramic+Series Resistor)
•
Built-in output voltage detector ...................................... with delay (C version)
•
Detector Threshold Tolerance......................................... ±2.5%
•
Detector Threshold Voltage ............................................ Stepwise setting with a step of 0.1V in the range of 1.7V to 8.0V
•
Operating Input Voltage ................................................... Max. 18.5V
m
i
L
d
e
t
i
APPLICATIONS
•
Power source for handheld equipment such as cameras and videos.
•
Power source for home appliances.
•
Power source for battery-powered equipment.
1
R1151N
BLOCK DIAGRAMS
R1151NxxxB
4
V
DD
6
CE
1
EXT
+
-
Vref
V
DET
2
Vref
-
+
Current Limit
3 V
OUT
5 GND
R1151NxxxC
4
V
DD
6
CD
+
-
Vref
V
DET
2
-
SELECTION GUIDE
R1151Nxxxx-xx
↑↑ ↑
a b c
Code
a
The output voltage, mask option code, and the taping type for the ICs can be selected at the user's request. The
selection can be made with designating the part number as shown below;
←Part
Number
m
i
L
+
Vref
Current Limit
d
e
t
i
1
EXT
3 V
OUT
5 GND
Contents
Code Number for Voltage Setting
Setting mask option :
A: with CE (active at "L" type)
B: with CE (active at "H" type)
C: with the pin for external capacitor to set the output delay of voltage detector
Designation of Taping Type :
Ex. TR (Refer to Taping Specifications.)
b
c
2
R1151N
PIN CONFIGURATION
SOT-23-6
6
5
4
V
DD
GND
CE/CD
(MARK SIDE)
EXT
V
DET
V
OUT
1
2
3
PIN DESCRIPTIONS
Pin No.
1
2
3
4
4
5
6
Symbol
EXT
V
DET
V
OUT
CE or CE
CD
GND
V
DD
External Transistor Drive Pin
Voltage Detector Output Pin
Voltage Regulator Output pin
Chip Enable Pin (A/B version)
Pin for External capacitor to set Output Delay of Voltage Detector (C version)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
V
CE/CD
V
OUT
V
EXT
V
DET
I
EXT
P
D
Topt
Tstg
Item
Input Voltage
Input Voltage (CE /CE/CD Pin)
Output Voltage (V
OUT
Pin)
Output Voltage (EXT Pin)
Output Voltage (V
DET
Pin)
EXT Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
m
i
L
Ground Pin
Input Pin
d
e
t
i
20
30
Description
Rating
Unit
V
V
V
V
V
mA
mW
°C
°C
-0.3
∼
V
IN
+0.3
-0.3
∼
V
IN
+0.3
-0.3
∼
V
IN
+0.3
-0.3
∼
V
IN
+0.3
150
-40 ~ 85
-55 ~ 125
3
R1151N
ELECTRICAL CHARACTERISTICS
•
R1151NxxxA/B
Topt=25°C
Symbol
V
OUT
I
OUT
∆V
OUT
/∆I
OUT
V
DIF
I
SS
Istandby
I
EXT
leak
∆V
OUT
/∆V
IN
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
Supply Current (Standby)
EXT Leakage Current
Line Regulation
Conditions
V
IN
= Set V
OUT
+1V
I
OUT
= 50mA
V
IN
- V
OUT
= 1.0V
V
IN
= Set V
OUT
+1V
1mA
≤
I
OUT
≤
100mA
I
OUT
= 100mA
V
IN
= Set V
OUT
+1V I
OUT
= 0mA
,
V
IN
= 18.5V
Min.
V
OUT
×0.98
1
Note
Refer to the Load Regulation Table
0.1
Note
70
15
0.5
0.10
0.2
100
V
µA
µA
µA
%/V
Typ.
Max.
V
OUT
×1.02
Unit
V
A
Set V
OUT
+0.5V
≤
V
IN
≤
18.5V
I
OUT
= 50mA
RR
V
IN
∆V
OUT
/∆T
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Current Limit
f = 1kHz, Ripple 0.5Vp-p
V
IN
= Set V
OUT
+1V
Ilim
I
RPT
R
UD
V
CEH
V
CEL
-V
DET
Short Current Limit
CE /CE Pull-up/down Resistance
CE /CE Input Voltage "H"
CE /CE Input Voltage "L"
Detector Threshold
Detector Threshold
Hysteresis Range
Output Current 2
Detector Threshold
Temperature Coefficient
Output Delay Time
Minimum Operating Voltage
m
i
L
I
OUT
= 10mA
-40°C
≤
Topt
≤
85°C
V
IN
- V
OUT
= 1.0V
V
OUT
= 0V
-40°C
≤
Topt
≤
85°C
Base Current I
B
of PNP Tr.
d
e
t
i
0.00
8
1.5
0.00
-V
DET
×0.975
-V
DET
×0.03
2.0
0.02
60
18.5
dB
V
ppm
/°C
27
mA
±100
Base Current I
B
of PNP Tr.
0.7
2
V
IN
0.25
-V
DET
×1.025
-V
DET
×0.05
5.0
±100
0.1
0.9
1.1
-V
DET
×0.07
10.0
mA
MΩ
V
V
V
V
HYS
I
OUT2
∆V
DET
/∆T
tPLH
V
DDL
V
mA
ppm
/°C
ms
V
V
DD
= 1.5V V
DS
= 0.5V
,
Note: This item depends on the capability of external PNP transistor. Use low saturation type transistor with
hFE value range of 100 to 300.
4
R1151N
•
R1151NxxxC
Topt=25°C
Symbol
V
OUT
I
OUT
∆V
OUT
/∆I
OUT
V
DIF
I
SS
I
EXT
leak
∆V
OUT
/∆V
IN
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
EXT Leakage Current
Line Regulation
Set V
OUT
+0.5V
≤
V
IN
≤
18.5V
I
OUT
= 50mA
0.00
0.02
Conditions
V
IN
= Set V
OUT
+1V
I
OUT
= 50mA
V
IN
- V
OUT
= 1.0V
V
IN
= Set V
OUT
+1V
1mA
≤
I
OUT
≤
100mA
I
OUT
= 100mA
V
IN
= Set V
OUT
+1V I
OUT
= 0mA
,
Min.
V
OUT
Typ.
Max.
V
OUT
×1.02
1
*Note1
Refer to the Load Regulation Table
0.1
*Note1
70
100
0.5
0.10
V
µA
µA
%/V
Unit
V
A
×
0.98
RR
V
IN
∆V
OUT
/∆T
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Current Limit
f = 1kHz, Ripple 0.5Vp-p
V
IN
= Set V
OUT
+1V
I
OUT
= 10mA
-40°C
≤
Topt
≤
85°C
Ilim
I
RPT
Short Current Limit
-V
DET
Detector Threshold
Detector Threshold
Hysteresis Range
Output Current 2
Detector Threshold
V
HYS
I
OUT2
∆V
DET
/∆T
tPLH
V
DDL
m
i
L
V
OUT
= 0V
CD=220pF
*Note2
Base Current I
B
of PNP Tr.
V
IN
- V
OUT
= 1.0V
Base Current I
B
of PNP Tr.
d
e
t
i
8
-V
DET
×0.975
-V
DET
×0.03
2.0
0.9
60
18.5
±100
dB
V
ppm
/°C
27
mA
0.7
-V
DET
×1.025
-V
DET
×0.05
5.0
±100
1.6
0.9
2.7
1.1
-V
DET
×0.07
10.0
mA
V
V
mA
ppm
/°C
ms
V
V
DD
= 1.5V V
DS
= 0.5V
,
Temperature Coefficient
Output Delay Time
Minimum Operating Voltage
-40°C
≤
Topt
≤
85°C
Note1:This item depends on the capability of external PNP transistor. Use low saturation type transistor with
hFE value range of 100 to 300.
Note2:V
DET
pin is pulled-up to V
DD
via 470kΩ resistance. The time is between the rising edge of V
OUT
level from
0.9V to (+V
DET
)+2.0V and the reaching point to ((+V
DET
)+2.0V)/2 of the V
DET
output voltage.
5
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