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R1LV0408CSB-7LI

512K X 8 STANDARD SRAM, 70 ns, PDSO32
512K × 8 标准存储器, 70 ns, PDSO32

器件类别：存储    存储   

厂商名称：Renesas(瑞萨电子)

厂商官网：https://www.renesas.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
零件包装代码
TSOP2
包装说明
SOP,
针数
32
Reach Compliance Code
compli
ECCN代码
3A991.B.2.A
最长访问时间
70 ns
JESD-30 代码
R-PDSO-G32
内存密度
4194304 bi
内存集成电路类型
STANDARD SRAM
内存宽度
8
功能数量
1
端子数量
32
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX8
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
认证状态
Not Qualified
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子位置
DUAL
Base Number Matches
1
文档预览
R1LV0408C-I Series
Wide Temperature Range Version
4M SRAM (512-kword
×
8-bit)
REJ03C0098-0200Z
Rev. 2.00
May.25.2004
Description
The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword
×
8-bit. R1LV0408C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II and 32-pin STSOP.
Features
•
Single 3 V supply: 2.7 V to 3.6 V
•
Access time: 55/70 ns (max)
•
Power dissipation:
Active: 6 mW/MHz (typ)
Standby: 1.5
µW
(typ)
•
Completely static memory.
No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output.
Three state output
•
Directly TTL compatible.
All inputs and outputs
•
Battery backup operation.
•
Operating temperature:
−40
to +85°C
Rev.2.00, May.25.2004, page 1 of 12
R1LV0408C-I Series
Ordering Information
Type No.
R1LV0408CSP-5SI
R1LV0408CSP-7LI
R1LV0408CSB-5SI
R1LV0408CSB-7LI
R1LV0408CSA-5SI
R1LV0408CSA-7LI
Access time
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
8mm
×
13.4mm STSOP (32P3K-B)
400-mil 32-pin plastic TSOP II (32P3Y-H)
Package
525-mil 32-pin plastic SOP (32P2M-A)
Rev.2.00, May.25.2004, page 2 of 12
R1LV0408C-I Series
Pin Arrangement
32-pin SOP
32-pin TSOP
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Top view)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
A11
A9
A8
A13
WE#
A18
A15
V
CC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Top view)
32-pin STSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
V
SS
I/O2
I/O1
I/O0
A0
A1
A2
A3
Pin Description
Pin name
A0 to A18
I/O0 to I/O7
CS# (CS)
OE# (OE)
WE# (WE)
V
CC
V
SS
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Power supply
Ground
Rev.2.00, May.25.2004, page 3 of 12
R1LV0408C-I Series
Block Diagram
LSB
V
CC
V
SS
•
•
•
•
•
MSB
A11
A9
A8
A15
A18
A10
A13
A17
A16
A14
A12
Row
Decoder
Memory Matrix
2,048
×
2,048
I/O0
Input
Data
Control
I/O7
•
•
Column I/O
Column Decoder
•
•
LSB A3 A2A1A0 A4 A5 A6 A7 MSB
•
•
CS#
WE#
OE#
Timing Pulse Generator
Read/Write Control
Rev.2.00, May.25.2004, page 4 of 12
R1LV0408C-I Series
Operation Table
WE#
×
H
H
L
L
CS#
H
L
L
L
L
OE#
×
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
I/O0 to I/O7
High-Z
High-Z
Dout
Din
Din
Ref. cycle
Read cycle
Write cycle (1)
Write cycle (2)
Note: H: V
IH
, L: V
IL
,
×:
V
IH
or V
IL
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature range
Storage temperature range under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
−0.5
to +4.6
−0.5*
1
to V
CC
+ 0.5*
2
0.7
−40
to +85
−65
to +150
−40
to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. V
T
min:
−3.0
V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
(Ta =
−40
to +85°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Note:
V
IH
V
IL
Min
2.7
0
2.2
−0.3*
1
Typ
3.0
0
Max
3.6
0
V
CC
+ 0.3
0.6
Unit
V
V
V
V
1. V
IL
min:
−3.0
V for pulse half-width
≤
30 ns.
Rev.2.00, May.25.2004, page 5 of 12
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参数对比
与R1LV0408CSB-7LI相近的元器件有：R1LV0408C-I、R1LV0408CSB-5SI、R1LV0408CSP-5SI、R1LV0408CSP-7LI、R1LV0408CSA-5SI、R1LV0408CSA-7LI。描述及对比如下：
型号 R1LV0408CSB-7LI R1LV0408C-I R1LV0408CSB-5SI R1LV0408CSP-5SI R1LV0408CSP-7LI R1LV0408CSA-5SI R1LV0408CSA-7LI
描述 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32
内存宽度 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32
组织 512KX8 512K X 8 512KX8 512KX8 512KX8 512KX8 512KX8
表面贴装 YES Yes YES YES YES YES YES
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
零件包装代码 TSOP2 - TSOP2 SOIC SOIC TSOP TSOP
包装说明 SOP, - SOP, SOP, SOP, SOP, TSOP2, TSSOP32,.56,20
针数 32 - 32 32 32 32 32
Reach Compliance Code compli - compli compli compli compli unknow
ECCN代码 3A991.B.2.A - 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 70 ns - 55 ns 55 ns 70 ns 55 ns 70 ns
JESD-30 代码 R-PDSO-G32 - R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
内存密度 4194304 bi - 4194304 bi 4194304 bi 4194304 bi 4194304 bi 4194304 bi
内存集成电路类型 STANDARD SRAM - STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
字数 524288 words - 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 - 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C - 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP - SOP SOP SOP SOP TSOP2
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE
并行/串行 PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大供电电压 (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V - 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V - 3 V 3 V 3 V 3 V 3 V
技术 CMOS - CMOS CMOS CMOS CMOS CMOS
厂商名称 - - Renesas(瑞萨电子) Renesas(瑞萨电子) - Renesas(瑞萨电子) Renesas(瑞萨电子)
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