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RF1K49157

Power Field-Effect Transistor, 6.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

器件类别:分立半导体    晶体管   

厂商名称:Harris

厂商官网:http://www.harris.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Harris
包装说明
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
AVALANCHE RATED
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
30 V
最大漏极电流 (Abs) (ID)
6.3 A
最大漏极电流 (ID)
6.3 A
最大漏源导通电阻
0.03 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
MS-012AA
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
元件数量
1
端子数量
8
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
2 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
最大关闭时间(toff)
265 ns
最大开启时间(吨)
85 ns
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S E M I C O N D U C T O R
RF1K49157
6.3A, 30V, Avalanche Rated, Single N-Channel
LittleFET™ Enhancement Mode Power MOSFET
Description
The RF1K49157 Single N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It was designed for
use in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
Formerly developmental type TA49157.
January 1997
Features
• 6.3A, 30V
• r
DS(ON)
= 0.030Ω
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
RF1K49157
PACKAGE
MS-012AA
BRAND
RF1K49157
Symbol
NOTE: When ordering, use the entire part number. For ordering in tape
and reel, add the suffix 96 to the part number, i.e., RF1K4915796.
NC (1)
DRAIN (8)
SOURCE (2)
DRAIN (7)
SOURCE (3)
DRAIN (6)
GATE (4)
DRAIN (5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
LittleFET™ is a trademerk of Harris Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1997
File Number
4012.4
5-64
RF1K49157
Absolute Maximum Ratings
TA = 25
o
C Unless Otherwise Specified
RF1K49157
30
30
±20
6.3
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
260
UNITS
V
V
V
A
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
A
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
W
W/
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 30V,
V
GS
= 0V
V
GS
=
±20V
I
D
= 6.3A
V
GS
= 10V
V
GS
= 4.5V
T
A
= 25
o
C
T
A
= 150
o
C
MIN
30
1
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
DD
= 24V,
I
D
= 6.3A,
R
L
= 3.81Ω
-
-
-
-
-
-
Pulse width = 1s
Device mounted on FR-4 material
-
TYP
-
-
-
-
-
-
-
-
22
43
125
85
-
70
38
2.8
1575
700
200
-
MAX
-
3
1
50
100
0.030
0.060
85
-
-
-
-
265
88
48
3.5
-
-
-
62.5
UNITS
V
V
µA
µA
nA
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance
I
GSS
r
DS(ON)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Ambient
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JA
V
DD
= 15V, I
D
= 6.3A,
R
L
= 2.38Ω, V
GS
= 10V,
R
GS
= 25Ω
Source to Drain Diode Ratings and Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 6.3A
I
SD
= 6.3A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.25
60
UNITS
V
ns
5-65
RF1K49157
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
25
125
50
75
100
o
C)
T
A
, AMBIENT TEMPERATURE (
150
0.8
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
25
0.6
0.4
0.2
0.0
50
75
100
125
o
C)
T
A
, AMBIENT TEMPERATURE (
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
10
I
D
, DRAIN CURRENT (A)
Z
θJA
, NORMALIZED
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
1 0.02
0.01
P
DM
100
T
J
= MAX RATED, T
A
= 25
o
C
10
1
5ms
10ms
100ms
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
10
3
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.01
0.1
1s
V
DSS
MAX = 30V
DC
100
SINGLE PULSE
0.01
10
-3
10
-2
10
-1
10
0
10
1
10
2
t, RECTANGULAR PULSE DURATION (s)
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
300
I
DM
, PEAK CURRENT CAPABILITY (A)
100
I
AS
, AVALANCHE CURRENT (A)
V
GS
= 20V
V
GS
= 10V
50
T
A
= 25
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
10
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
10
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
0.1
=
I
25
10
-4
1
10
-5
150 - T
A
125
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
FIGURE 5. PEAK CURRENT CAPABILITY
NOTE: Refer to Harris Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
5-66
RF1K49157
Typical Performance Curves
50
V
GS
= 20V
V
GS
= 10V
V
GS
= 7V
V
GS
= 5V
30
V
GS
= 4V
20
(Continued)
50
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
40
40
PULSE TEST
-55
o
C
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
25
o
C
150
o
C
V
DD
= 15V
30
20
10
PULSE DURATION = 250µs, T
A
= 25
o
C
0
0
1.0
2.0
3.0
4.0
5.0
10
0
0.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.5
3.0
4.5
6.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
7.5
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
250
r
DS(ON)
, ON-STATE RESISTANCE (mΩ)
I
D
= 15A
200
I
D
= 6.3A
I
D
= 3.5A
I
D
= 1.75A
NORMALIZED ON RESISTANCE
2.0
PULSE DURATION = 250µs, V
GS
= 10V, I
D
= 6.3A
1.5
150
1.0
100
PULSE DURATION = 250µs, V
DD
= 15V
50
0.5
0
2.0
8.0
6.0
4.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
10.0
0
-80
-40
0
40
80
120
o
C)
T
J
, JUNCTION TEMPERATURE (
160
FIGURE 9. r
DS(ON)
FOR VARYING CONDITIONS OF GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
2.0
I
D
= 250µA
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
0
-80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
0
40
80
120
o
C)
T
J
, JUNCTION TEMPERATURE (
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5-67
RF1K49157
Typical Performance Curves
2500
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
= 0V, FREQUENCY (f) = 1MHz
2000
C, CAPACITANCE (pF)
C
ISS
1500
(Continued)
30
10.0
V
GS
, GATE-SOURCE VOLTAGE (V)
22.5
V
DD
= BV
DSS
15
R
L
= 4.76Ω
I
G(REF)
= 0.8mA
V
GS
= 10V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
7.5
5.0
1000
C
OSS
7.5
2.5
500
C
RSS
0
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
0
I G
(
REF
)
-
20
---------------------
I
G
(
AC T
)
I G
(
REF
)
t, TIME (µs)
-
80
---------------------
I
G
(
AC T
)
FIGURE 13. CAPACITANCE vs VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
R
G
-
+
BV
DSS
V
DS
V
DD
V
DD
0V
I
L
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
V
DD
R
L
V
DS
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
t
OFF
t
d(OFF)
t
f
90%
10%
0V
R
GS
DUT
V
GS
10%
50%
PULSE WIDTH
90%
50%
10%
FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
5-68
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