Preliminary
7
Typical Applications
• Multimode W-CDMA/GSM/DCS/EDGE
• W-CDMA Systems
• GSM Systems
RF2689
W-CDMA/GSM/DCS RECEIVE AGC
AND DEMODULATOR
Product Description
The RF2689 is an integrated complete IF AGC amplifier
and quadrature demodulator designed for the receive
section of W-CDMA and GSM/DCS applications. It is
designed to amplify received IF signals, while providing
70dB of gain control range, a total of 90dB gain, and
demodulate to baseband I and Q signals. This circuit is
designed as part of RFMD’s multimode W-CDMA/GSM/
DCS chipset, which also includes the RF2688 W-CDMA/
GSM/DCS transmit modulator and IF AGC/Upconverter.
The IC is manufactured on an advanced 25GHz F
T
Sili-
con Bi-CMOS process, and is packaged in a 20-pin,
4mmx4mm, leadless chip carrier.
1.00
0.90
0.60
0.24 typ
4.00
sq.
0.65
0.30
4 PLCS
3 0.20
2.10
sq.
12°
MAX
0.05
Dimensions in mm.
0.75
0.50
0.50
Note orientation of package.
0.23
0.13
4 PLCS
7
QUADRATURE
DEMODULATORS
NOTES:
1 Shaded lead is Pin 1.
2 Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
3
Dimension applies to plated terminal: to be measured between 0.02 mm
and 0.25 mm from terminal end.
4 Package Warpage: 0.05 mm max.
5 Die Thickness Allowable: 0.305 mm max.
Optimum Technology Matching® Applied
Package Style: LCC, 20-Pin, 4x4
ü
Si Bi-CMOS
Si BJT
GaAs HBT
SiGe HBT
GaAs MESFET
Si CMOS
Features
• Digitally Controlled Power Down Mode
• 2.7V to 3.3V Operation
14 I OUT+
13 I OUT-
VGC2
VGC1
20
1
17
18
IF+
IF-
GSM IN+ 2
GSM IN- 3
DIV2
W-CDMA IN+ 4
W-CDMA IN- 5
Gain
Control
• Digital LO Quadrature Divide-by-8
• IF AGC Amp with 70dB Gain Control
• 80dB Maximum Voltage Gain
15 CALEN
I/Q
Cal
16 FCLK
12 Q OUT+
Div
12 or 4
Mode Control
& Biasing
11 Q OUT-
DIV2
19 VREF2V
6
VCC
8
LO
7
MODE A
9
MODE B
10
EN RX
Ordering Information
RF2689
RF2689 PCBA
W-CDMA/GSM/DCS Receive AGC and Demodulator
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010815
7-39
RF2689
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Down Voltage (V
PD
)
Input RF Power
Ambient Operating Temperature
Storage Temperature
Preliminary
Rating
-0.5 to +5
-0.5 to V
CC
+0.7
+3
-40 to +85
-40 to +150
Unit
V
DC
V
DC
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
W-CDMA Mode
Specification
Min.
Typ.
Max.
Unit
Condition
Temp=25°C, V
CC
=3V, Z
LOAD
=60kΩ diff.,
LO=1520MHz@-10dBm, Z
SOURCE
=500Ω
diff.
IF Frequency
W-CDMA IF Input Impedance
190
1200
2400
MHz
Ω
Ω
Single-ended
Balance. An external resistor across the dif-
ferential input is used to define the input
impedance.
7
QUADRATURE
DEMODULATORS
LO Frequency
LO Input Level
LO Input Impedance
Maximum Voltage Gain
-20
76
1520
-10
50
80
0
MHz
dBm
Ω
dB
Single-ended.
Pin-to-Pin voltage gain.
Note: 10dB additional voltage gain in input
match 50Ω to 500Ω.
Minimum Voltage Gain
Gain Variation versus V
CC
and
Temperature
Gain Control Voltage
Input IP3
5
-3
0.3
10
+1
15
+3
2.4
dB
V
Defined with external 10kΩ resistor in series
with V
GC1
pin. Analog gain control.
Blockers at 10MHz and 20MHz offset.
Maximum Gain. V
GC
=2.4V
Minimum Gain. V
GC
=0.3V
Maximum Gain. V
GC
=2.4V
Minimum Gain V
GC
=0.3V
Measured differentially.
Out of band blocker causing 1dB of inband
gain compression. Blocker at 5MHz.
Maximum Gain. V
GC
=2.4V
Minimum Gain. V
GC
=0.3V
Butterworth third order, F
C
2.5M+10%
Calibrated. F
CLK
=13MHz, 3dB rolloff from
1MHz offset
A measure of IQ gain match and IQ quadra-
ture accuracy. Measured for baseband fre-
quencies 100kHz to 2.5MHz.
Resistive Load Impedance.
Differentially across op pins.
Capacitive Load Impedance.
To ground.
V
GC
=0.3V, P
IN
=-30dBm
V
GC
=0.3V, P
IN
=-30dBm
-52
-5
Noise Figure
Inband Output 1dB Compression
Compression
1.5
-48
0
5
56
2.0
7
58
dBm
dBm
dB
V
P-P
-48
-17
Baseband 3dB Bandwidth
Sideband Suppression
2.25
2.5
2.75
27
dBm
dBm
MHz
dB
DC Offset
Baseband External Load
20
+40
60
5
mV
kΩ
pF
V
dB
degree
Output DC Voltage
IQ Amplitude Balance
IQ Phase Balance
V
CC
-1.3
V
CC
-1.6
+0.2
+2
V
CC
-1.9
+0.5
+5
7-40
Rev A4 010815
Preliminary
Parameter
GSM/DCS Mode
RF2689
Specification
Min.
Typ.
Max.
Unit
Condition
Temp=25°C, V
CC
=3V, Z
LOAD
=60kΩ diff.,
LO=1080MHz@ -10dBm, Z
SOURCE
=500Ω
IF Frequency
2nd IF Frequency
LO Frequency
LO Input Level
LO Input Impedance
Maximum Voltage Gain
-20
77
225
45
1080
-10
50
83
0
MHz
MHz
MHz
dBm
Ω
dB
Single-ended.
V
GC
=0.5V to 2.4V
Pin-to-Pin voltage gain.
Note: 10dB additional voltage gain in input
match 50Ω to 500Ω.
Minimum Voltage Gain
Gain Variation versus V
CC
and
Temperature
Gain Control Voltage
Noise Figure
Input IP3
-15
-3
0.3
-10
+2
-5
+3
2.4
dB
dB
V
dB
Defined with external 10kΩ resistor in series
with GC pin. Analog gain control.
Maximum Gain. V
GC
=2.4V
Minimum Gain V
GC
=0.3V
Blockers at 800kHz and 1650kHz offset.
Maximum Gain. V
GC
=2.4V
Minimum Gain. V
GC
=0.3V
Maximum Gain. Measured differentially.
Out of band blocker causing 1dB of inband
gain compression. Blocker at 800kHz offset.
Maximum Gain. V
GC
=2.4V
Minimum Gain. V
GC
=0.3V
Single-ended
Balance. An external resistor across the dif-
ferential input is used to define the input
impedance.
Butterworth third order, F
C
250k+10%
3dB rolloff from 50kHz offset
Calibrated. F
CLK
=13MHz
Uncalibrated.
A measure of IQ gain match and IQ quadra-
ture accuracy. Measured for baseband fre-
quencies 100kHz to 2.5MHz.
Resistive Load Impedance.
Differentially across op pins.
Capacitive Load Impedance.
To ground.
V
GC
=0.3V, P
IN
=-30dBm
V
GC
=0.3V, P
IN
=-30dBm
6
80
-54
-5
1.5
-49
0
2.5
8
82
Inband Output 1dB Compression
Compression
GSM IF Input Impedance
-65
-17
1200
2400
dBm
dBm
Ω
Ω
Baseband 3dB Bandwidth
225
100
250
275
400
27
kHz
kHz
dB
Sideband Suppression
DC Offset
Baseband External Load
20
+60
60
5
mV
kΩ
pF
V
dB
degree
Output DC Voltage
IQ Amplitude Balance
IQ Amplitude Balance
V
CC
-1.3
V
CC
-1.6
+0.2
+2
V
CC
-1.9
+0.5
+5
Rev A4 010815
7-41
QUADRATURE
DEMODULATORS
dBm
dBm
V
P-P
7
RF2689
Parameter
Auto Calibration
F
CLK
Input Frequency
1
F
CLK
Signal Level
F
CLK
Pin Input Impedance
Calibration Time
Current, Auto Cal.
Current, Once Auto Cal Finished
13
0.4
20
200
1
1
2.7
3.0
<1
5
8
5
9
1.8
0
3.3
1.0
MHz
V
P-P
kΩ
us
mA
uA
V
µA
mA
mA
mA
mA
V
V
Single-ended.
Preliminary
Specification
Min.
Typ.
Max.
Unit
Condition
Disabled after calibration.
DC Specifications
Supply Voltage
Current Consumption
Power Down
W-CDMA Standby
W-CDMA
GSM/DCS Standby
GSM/DCS
Logic Levels
V
EN
High Voltage
V
EN
Low Voltage
6
10
6
12
V
CC
0.5
7
QUADRATURE
DEMODULATORS
1
Bondout
option available for 15.36MHz, 18MHz and 19MHz.
7-42
Rev A4 010815
Preliminary
Mode Control
Logic
EN RX
Chip Enable
If EN =0 then the whole IC is powered down
RF2689
Mode Control Truth Table
Mode
Power Down
GSM/DCS RX Warm-Up
GSM/DCS RX
W-CDMA RX Warm-Up
W-CDMA RX
EN RX
0
1
1
1
1
Mode B
X
0
1
0
1
Mode A
X
1
1
0
0
Auto Calibration Mode
The filters are automatically tuned when the CALEN pin goes high. The filters are reset to a nominal value whenever the
CALEN pin goes low. The auto calibration circuitry is independent of the “Mode A/B” and the EN RX control pins.
The EN RX and CALEN pins can be connected together if desired.
Truth Table
Mode
Power Down
GSM/DCS RX Warm-Up
GSM/DCS RX
W-CDMA RX Warm-Up
W-CDMA RX
W-CDMA GSM Input Amp
Input Amp
& 1st Mixer
0
0
0
0
0
0
1
1
0
0
Fixed
Divider
0
1
(div 2)
1
(div 2)
1
(div 2)
1
(div 2)
GSM
Divider
0
0
(div 2)
1
(div 2)
0
0
Second
Dividers
0
0
(div 12)
1
(div 12)
1
(div 4)
0
(div 4)
VGA
0
0
1
0
1
Demod
0
0
1
0
1
Baseband
& Filters
0
0
1
(250kHz)
0
1
(2.5MHz)
7
QUADRATURE
DEMODULATORS
Rev A4 010815
7-43
