Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= Rated BV
DSS
V
DS
= 0.8 x Rated BV
DSS
, V
DS
= 80V,
T
C
= 125
o
C
MIN
100
1
-
-
-
-
-
-
-
-
-
V
GS
= 0V, V
DS
= 25V, f = 1MHz
(Figure 9)
-
-
-
-
TYP
-
-
-
-
-
-
-
10
15
25
30
-
-
-
-
MAX
-
2
1
25
±
100
1.200
1.2
25
45
45
50
200
80
35
15
UNITS
V
V
µ
A
µ
A
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
I
GSS
r
DS(ON)
V
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θ
JC
V
GS
=
±
10V, V
DS
= 0
I
D
= 1A, V
GS
= 5V (Figures 6, 7)
I
D
= 1A, V
GS
= 5V
I
D
≈
1A, V
DD
= 50V, R
G
= 6.25
Ω
,
V
GS
= 5V, R
L
= 50
Ω
(Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTES:
2. Pulse test: width
≤
300
µ
s duty cycle
≤
2%.
3. Repetitive rating: pulse witdh limited by maximum junction temperature.
