CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
R
θJA
TO-251 and TO-252
TO-220
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Figure 14
V
DD
= 40V, I
D
= 14A,
R
L
= 2.86Ω
Figures 20, 21
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V, Figure 13
V
GS
= V
DS
, I
D
= 250µA, Figure12
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±10V
I
D
= 14A, V
GS
= 5V, Figures 9, 11
V
DD
= 25V, I
D
= 7A,
R
L
= 3.57Ω, V
GS
= 5V,
R
GS
= 0.6Ω
MIN
50
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
13
24
42
16
-
-
-
-
670
185
50
-
-
-
MAX
-
2
1
50
±100
0.100
60
-
-
-
-
100
40
25
1.5
-
-
-
3.125
100
80
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
SYMBOL
V
SD
t
rr
I
SD
= 14A
I
SD
= 14A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
6-136
RFD14N05L, RFD14N05LSM, RFP14N05L
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
25
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
12
0.8
0.6
0.4
0.2
0
Unless Otherwise Specified
16
8
4
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θ
JC
, NORMALIZED
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-2
10
-1
10
-3
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
P
DM
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
I
DM
, PEAK CURRENT CAPABILITY (A)
T
C
= 25
o
C
T
J
= MAX. RATED
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I
D
, DRAIN CURRENT (A)
=
I
25
100µs
10
1ms
10ms
100ms
DC
100
175 - T
C
150
1
0.5
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
10
10
-5
T
C
= 25
o
C
10
-4
V
GS
= 10V
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
6-137
RFD14N05L, RFD14N05LSM, RFP14N05L
Typical Performance Curves
50
I
AS
, AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
35
30
I
D
, DRAIN CURRENT (A)
25
20
15
10
5
0
V
GS
= 3V
V
GS
= 2.5V
0
1.5
3.0
4.5
6.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
7.5
PULSE DURATION = 80µs, T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX.
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
1
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
35
-55
o
C
175
o
C
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
30
25
20
15
10
5
0
0
1.5
3.0
4.5
6.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
7.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
DD
= 15V
25
o
C
250
I
D
= 7A
200
I
D
= 14A
I
D
= 28A
150
100
I
D
= 3.5A
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
0
2.5
3.0
3.5
4.0
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.0
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
160
140
SWITCHING TIME (ns)
120
100
80
V
DD
= 25V, I
D
= 14A, R
L
= 3.57Ω
2.5
t
d(OFF)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
GS
= 10V, I
D
= 14A
t
r
t
f
1.5
60
40
t
d(ON)
20
0
0
20
30
40
10
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
6-138
RFD14N05L, RFD14N05LSM, RFP14N05L
Typical Performance Curves
2.0
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
Unless Otherwise Specified
(Continued)
2.0
I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0
-80
-40
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
800
C
ISS
C, CAPACITANCE (pF)
600
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
C
OSS
200
C
RSS
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
V
DD
= BV
DSS
V
DD
= BV
DSS
5
40
4
30
3
400
20
10
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 3.57Ω
I
G(REF)
= 0.4mA
V
GS
= 5V
I G
(
REF
)
20 ------------------------
-
I G
(
ACT
)
t, TIME (µs)
I G
(
REF
)
80 ------------------------
-
I G
(
ACT
)
2
1
0
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260,
电源技术
