CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
V
DS
= 60V
V
GS
= 0V
T
C
= 25
o
C
T
C
= 150
o
C
MIN
60
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 48V, I
D
= 25A,
R
L
= 1.92Ω
I
g(REF)
= 0.75mA
(Figure 13)
-
-
-
-
-
-
(Figure 3)
-
-
TYP
-
-
-
-
-
-
-
14
30
45
22
-
-
-
-
975
330
95
-
-
MAX
-
4
1
50
±100
0.047
60
-
-
-
-
100
80
45
3
-
-
-
2.083
62
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
GS
=
±20V
I
D
= 25A, V
GS
= 10V (Figure 9)
V
DD
= 30V, I
D
= 12.5A
R
L
= 2.4Ω, V
GS
= 10V
R
GS
= 10Ω
(Figure 13)
V
DS
= 25V, V
GS
= 0V
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 25A
I
SD
= 25A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
4-512
RFP25N06, RF1S25N06SM
Typical Performance Curves
1.2
Unless Otherwise Specified
30
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
I
D
, DRAIN CURRENT (A)
25
20
15
10
5
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
J
C
x R
θ
J
C
+ T
C
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
1
P
DM
Z
θ
JC
, NORMALIZED
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
100
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
I
DM
, PEAK CURRENT (A)
V
GS
= 20V
200
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175
–
T C
I = I 25
-----------------------
-
150
V
GS
= 10V
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
10ms
100ms
DC
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
T
C
= 25
o
C
10
0
10
1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
4-513
RFP25N06, RF1S25N06SM
Typical Performance Curves
100
I
AS
, AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
70
60
I
D
, DRAIN CURRENT (A)
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
STARTING T
J
= 25
o
C
50
40
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 6V
10
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
1
0.01
1
0.1
t
AV
, TIME IN AVALANCHE (µs)
10
20
10
0
V
GS
= 4.5V
0
V
GS
= 5V
8
2
4
6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
