S E M I C O N D U C T O R
RFG50N06LE, RFP50N06LE,
RF1S50N06LE, RF1S50N06LESM
50A, 60V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
July 1996
Features
•
•
•
•
•
•
•
50A, 60V
r
DS(ON)
= 0.022Ω
2kV ESD Protected
Temperature Compensating
PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The
RFG50N06LE,
RFP50N06LE,
RF1S50N06LE,
and
RF1S50N06LESM are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed for use in
applications such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated directly from
integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
RFG50N06LE
RFP50N06LE
RF1S50N06LE
RF1S50N06LESM
PACKAGE
TO-247
TO-220AB
TO-262AA
TO-263AB
BRAND
FG50N06L
FP50N06L
F50N06LE
F50N06LE
DRAIN
(FLANGE)
A
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Note: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e.
RF1S50N06LESM9A.
Formerly developmental type TA49164.
Symbol
G
D
JEDEC TO-263AB
M
A
A
DRAIN
(FLANGE)
S
GATE
SOURCE
Absolute Maximum Ratings
T
C
= +25
o
C
RFG50N06LE, RFP50N06LE,
RF1S50N06LE, RF1S50N06LESM
60
60
±10
50
Refer to Peak Current Curve
Refer to UIS Curve
142
0.95
-55 to +175
260
2
UNITS
V
V
V
A
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain-Gate Voltage (R
GS
= 1MΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate-Source Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . ESD
W
W/
o
C
o
C
o
C
kV
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1996
File Number
4072.1
1
Specifications RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM
Electrical Specifications
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= 60V,
V
GS
= 0V
V
GS
=
±10V
I
D
= 50A, V
GS
= 5V
V
DD
= 30V, I
D
= 50A,
R
L
= 0.6Ω, V
GS
= 5V,
R
GS
= 2.5Ω
T
C
= +25
o
C
T
C
= +150
o
C
MIN
60
1
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
DD
= 48V,
I
D
= 50A,
R
L
= 0.96Ω
-
-
-
-
-
-
-
TO-247
TO-220, TO-262, and TO-263
-
-
TYP
-
-
-
-
-
-
-
20
170
48
90
-
96
57
2.2
2100
600
230
-
-
-
MAX
-
2
1
50
10
0.022
230
-
-
-
-
165
120
70
2.7
-
-
-
1.05
30
80
UNITS
V
V
µA
µA
µA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G(TOT)
Q
G(5)
Q
G(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
Source-Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
RR
TEST CONDITIONS
I
SD
= 50A
I
SD
= 50A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.5
130
UNITS
V
ns
2
RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM
Typical Performance Curves
500
I
D
, DRAIN CURRENT (A)
T
C
= +25
o
C
10
DUTY CYCLE
0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
100
100µs
Z
θ
JC
, NORMALIZED
THERMAL RESPONSE
1
1ms
10
10ms
100ms
DC
V
DSS
MAX = 60V
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
100
200
0.1
P
DM
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t
1
t
2
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
60
50
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
I
DM
, PEAK CURRENT CAPABILITY (A)
1000
V
GS
= 10V
V
GS
= 5V
100
T
C
= +25
o
C
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
FOR TEMPERATURES
ABOVE +25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
C
I
=
I
25
150
10
-2
10
-1
10
0
10
1
10
-4
10
-3
t, PULSE WIDTH (s)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
PULSE DURATION = 250µs, T
C
= +25
o
C
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
100
V
GS
= 10V
V
GS
= 5V
I
D
, DRAIN CURRENT (A)
75
V
GS
= 4V
100
-55
o
C
V
DD
= 15V
+25
o
C
+175
o
C
75
50
50
V
GS
= 3V
25
V
GS
= 2.5V
0
0
1.5
3.0
4.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
6.0
25
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0
0.0
1.5
3.0
4.5
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
6.0
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3
RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM
Typical Performance Curves
BV
DSS
, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
(Continued)
I
D
= 250µA
1.2
V
GS(TH)
, NORMALIZED GATE
THRESHOLD VOLTAGE
2.0
V
GS
= V
DS
, I
D
= 250µA
1.1
1.5
1.0
1.0
0.9
0.5
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
PULSE DURATION = 250µs, V
GS
= 5V, I
D
= 50A
r
DS(ON)
, NORMALIZED ON RESISTANCE
r
DS(ON)
, ON-STATE RESISTANCE (mΩ)
2.5
80
I
D
= 12.5A
60
PULSE DURATION = 250µs, V
DD
= 15V
I
D
= 50A
I
D
= 100A
2.0
1.5
40
I
D
= 25A
20
1.0
0.5
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 9. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 10. r
DS(ON)
FOR VARYING CONDITIONS OF GATE
VOLTAGE AND DRAIN CURRENT
V
DS
, DRAIN-SOURCE VOLTAGE (V)
500
SWITCHING TIME (ns)
400
t
R
45
R
L
=1.2Ω
I
G(REF)
= 1.2mA
V
GS
= 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
I G
(
REF
)
I G
(
REF
)
3.75
t
D(OFF)
300
t
F
200
100
0
0
10
20
30
40
50
R
GS
, GATE-TO-SOURCE RESISTANCE (Ω)
t
D(ON)
30
2.50
15
1.25
0
0
-
20
------------------
I
G
(
ACT
)
t, TIME (µs)
-
80
------------------
I
G
(
ACT
)
FIGURE 11. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
4
V
GS
, GATE-SOURCE VOLTAGE (V)
600
V
DD
= 30V, I
D
= 50A, R
L
= 0.6Ω
60
V
DD
= BV
DSS
V
DD
= BV
DSS
5.00
RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM
Typical Performance Curves
2500
C
ISS
C, CAPACITANCE (pF)
2000
I
AS
, AVALANCHE CURRENT (A)
100
(Continued)
V
GS
= 0V, FREQUENCY (f) = 1MHz
300
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
1500
STARTING T
J
= +25
o
C
10
STARTING T
J
= +150
o
C
1000
C
OSS
500
C
RSS
0
0
5
10
15
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
25
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
FIGURE 13. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 14. UNCLAMPED INDUCTIVE SWITCHING. REFER TO
HARRIS APPLICATION NOTES AN9321 AND
AN9322
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
(
o
C)
150
175
T
C
, CASE TEMPERATURE
FIGURE 15. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE
5
