CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJA
Pad Area = 0.171 in
2
(See note 2)
Pad Area = 0.068 in
2
(Figure 20)
Pad Area = 0.026 in
2
(Figure 20)
V
GS
= 0V to -20V
V
GS
= 0V to -10V
V
GS
= 0V to -2V
V
DD
= -15V, I
D
≅
2.1A,
R
L
= 7.1Ω
I
g(REF)
= -1.0mA
(Figures 13, 16, 17)
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
V
DS
= -30V, V
GS
= 0V
V
DS
= -30V, V
GS
= 0V, T
A
= 150
o
C
V
GS
=
±20V
I
D
= 2.1A, V
GS
= -10V (Figure 9)
I
D
= 2.1A, V
GS
= -4.5V (Figure 9)
V
DD
= -15V, I
D
≅
2.1A,
R
L
= 7.1Ω, V
GS
= −10V,
R
GS
= 21Ω
(Figures 18, 19)
MIN
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
0.120
0.300
-
13
18
43
24
-
27
14
1.3
620
240
30
-
-
-
MAX
-
-3
-1
-50
±100
0.150
0.360
50
-
-
-
-
100
33
17
1.6
-
-
-
110
128
147
UNITS
V
V
µA
µA
nA
Ω
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
NOTE:
2. 110
o
C/W measured using FR-4 board with 0.171 in
2
footprint for 1000 seconds.
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= -2.1A
I
SD
= -2.1A, dI
SD
/dt = 100A/µs
I
SD
= -2.1A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
-1.25
49
45
UNITS
V
ns
nC
2
RFT2P03L
Typical Performance Curves
Unless Otherwise Specified
1.2
POWER DISSIPATION MULTIPLIER
I
D
, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
-2.5
R
θJA
= 110
o
C/W
-2.0
-1.5
-1.0
-0.5
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
2
1
Z
θ
JA
, NORMALIZED
THERMAL IMPEDANCE
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
SINGLE PULSE
R
θJA
= 110
o
C/W
10
1
t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t, RECTANGULAR PULSE DURATION (s)
10
2
10
3
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
A
= 25
o
C
R
θJA
= 110
o
C/W
100µs
I
DM
, PEAK CURRENT (A)
-30
R
θJA
= 110
o
C/W
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
-10
1ms
-10
10ms
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
-0.1
-1
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-100
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
RFT2P03L
Typical Performance Curves
Unless Otherwise Specified
-6
-20
I
AS
, AVALANCHE CURRENT (A)
-5
I
D
, DRAIN CURRENT (A)
-4
-3
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
-16
V
GS
= -20V
V
GS
= -10V
V
GS
= -7V
V
GS
= -6V
(Continued)
-12
-2
-8
V
GS
= -5V
V
GS
= -4.5V
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
-1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
-4
PULSE DURATION = 250µs
T
A
= 25
o
C
0
-1.5
-3.0
-4.5
-6.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-7.5
0
NOTE: Refer to Harris Application Notes AN9321 and AN9322.
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