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RGP02-12E

0.5 A, 1200 V, SILICON, SIGNAL DIODE, DO-41

器件类别:分立半导体    二极管   

厂商名称:EIC [EIC discrete Semiconductors]

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
Reach Compliance Code
compli
ECCN代码
EAR99
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.8 V
最大非重复峰值正向电流
20 A
元件数量
1
最高工作温度
175 °C
最大输出电流
0.5 A
最大重复峰值反向电压
1200 V
最大反向恢复时间
0.3 µs
表面贴装
NO
文档预览
RGP02-12E // 20E
PRV : 1200 - 2000 Volts
Io : 0.5 Ampere
FEATURES :
*
*
*
*
*
*
*
*
Glass passivated junction
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
HIGH VOLTAGE
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Peak Forward Surge Current 8.3 ms. Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at 0.1 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
RGP02- RGP02- RGP02- RGP02- RGP02-
12E
14E
16E
18E
20E
1200
840
1200
1400
980
1400
1600
1120
1600
0.5
1800
1260
1800
2000
1400
2000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
T
J
T
STG
20
1.8
5.0
50
300
5.0
- 65 to + 150
- 65 to + 150
A
V
μA
μA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
Notes :
( 1 ) Reverse Recovery Test Conditions
: I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0
DC
Page 1 of 2
Rev. 03 : February 20, 2006
RATING AND CHARACTERISTIC CURVES ( RGP02-12E - RGP02-20E )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Ω
10
Ω
+ 0.5
D.U.T.
50 Vdc
(approx)
1
Ω
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25
Trr
+
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
0.5
25
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
0.4
20
8.3 ms SINGLE HALF SINE WAVE
Ta = 50
°C
0.3
15
0.2
10
0.1
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
5
0
1
2
4
6
10
20
40
60 100
AMBIENT TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
FORWARD CURRENT, AMPERES
1.0
Pulse Width = 300
μs
2% Duty Cycle
T
J
= 25
°C
0.1
10
T
J
= 100
°C
1.0
0.01
0.1
T
J
= 25
°C
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.01
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 03 : February 20, 2006
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参数对比
与RGP02-12E相近的元器件有:RGP02-14E、RGP02-16E、RGP02-12E_06、RGP02-18E、RGP02-20E。描述及对比如下:
型号 RGP02-12E RGP02-14E RGP02-16E RGP02-12E_06 RGP02-18E RGP02-20E
描述 0.5 A, 1200 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1400 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1600 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1400 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1800 V, SILICON, SIGNAL DIODE 0.5 A, 2000 V, SILICON, SIGNAL DIODE, DO-204AL
是否无铅 不含铅 不含铅 不含铅 - 不含铅 不含铅
是否Rohs认证 符合 符合 符合 - 符合 符合
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli - compli compli
ECCN代码 EAR99 EAR99 EAR99 - EAR99 EAR99
配置 SINGLE SINGLE SINGLE - SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.8 V 1.8 V 1.8 V - 1.8 V 1.8 V
最大非重复峰值正向电流 20 A 20 A 20 A - 20 A 20 A
元件数量 1 1 1 - 1 1
最高工作温度 175 °C 175 °C 175 °C - 175 °C 175 °C
最大输出电流 0.5 A 0.5 A 0.5 A - 0.5 A 0.5 A
最大重复峰值反向电压 1200 V 1400 V 1600 V - 1800 V 2000 V
最大反向恢复时间 0.3 µs 0.3 µs 0.3 µs - 0.3 µs 0.3 µs
表面贴装 NO NO NO - NO NO
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