Preliminary
Datasheet
RJL6032DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 3.3
typ. (at I
D
= 1 A, V
GS
= 10 V, Ta = 25C)
High speed switching
Built in fast recovery diode
R07DS0250EJ0100
Rev.1.00
Jan 27, 2010
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse) Note1
I
APNote3
Pch
Note 2
ch-c
Tch
Tstg
Value
600
30
2
8
2
30.6
4.08
150
–55 to +150
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0250EJ0100 Rev.1.00
Jan 27, 2010
Page 1 of 6
RJL6032DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gage charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.3
265
35
4.5
12
13
30
40
10.6
1.2
5.6
—
—
Max
—
10
0.1
4
3.7
—
—
—
—
—
—
—
—
—
—
1.5
160
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1 A, V
GS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
V
DD
= 300 V
I
D
= 1 A
V
GS
= 10 V
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 2 A
I
F
= 2 A, V
GS
= 0
Note 4
I
F
= 2 A, V
GS
= 0
V
DD
= 300 V
di
F
/dt = 100 A/s
Note:
4. Pulse test
R07DS0250EJ0100 Rev.1.00
Jan 27, 2010
Page 2 of 6
RJL6032DPP-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
5
Ta = 25°C
Pulse Test
5V
7V
10 V
20 V
4.6 V
4.4 V
4.8 V
Typical Output Characteristics
I
D
(A)
10
PW
1
10
=1
μ
s
00
Drain Current
0.1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
1000
Drain Current
μ
s
I
D
(A)
4
3
2
V
GS
= 4.2 V
1
0.01
0.001
0
0
4
8
12
16
20
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
5
I
D
(A)
4
Tc =
−25°C
25°C
75°C
3
Drain Current
3
2
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
1
0.1
1
10
0
0
2
4
6
8
10
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
10
V
GS
= 10 V
Pulse Test
8
I
D
= 2 A
1.5 A
1A
2
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
6
100
4
0
−25
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0250EJ0100 Rev.1.00
Jan 27, 2010
Page 3 of 6
RJL6032DPP-M0
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
Tc = 25°C
f = 1 MHz
Preliminary
Dynamic Input Characteristics (Typical)
V
DS
(V)
I
D
= 2 A
Ta = 25°C
1000
Ciss
Capacitance C (pF)
600
V
DS
400
V
DD
= 100 V
300 V
480 V
12
Drain to Source Voltage
8
Coss
10
Crss
1
0
200
V
DD
= 480 V
300 V
100 V
0
4
8
12
16
4
0
0
20
50
100
150
200
250
300
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
8
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
6
V
GS
= 0
Ta = 25°C
Pulse Test
4
I
D
= 10 mA
3
1 mA
0.1 mA
1
V
DS
= 10 V
0
-25
0
25
50
75
100 125 150
Reverse Drain Current
4
2
2
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0250EJ0100 Rev.1.00
Jan 27, 2010
Page 4 of 6
Gate to Source Voltage
100
V
GS
(V)
800
V
GS
16
RJL6032DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
T
C
= 25°C
Preliminary
1
D=1
0.5
0.3 0.2
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.08°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
.05
0.1
0
2
0.0
1shot pulse
0.01
0.03
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0250EJ0100 Rev.1.00
Jan 27, 2010
Page 5 of 6
