ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: rlt@mcb.at
http://www.roithner.mcb.at
RLT6505MG
TECHNICAL DATA
Visible Wavelength Laserdiode
Structure:
AlGaInP, index guided, single transverse mode
Lasing wavelength:
650 nm
NOTE!
Max. optical power:
5 mW
LASERDIODE
Package:
5.6 mm
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operation Case Temperature
Storage Temperature
SYMBOL
P
o
V
R(LD)
V
R(PD)
T
C
T
STG
RATING
5
2
30
-10 .. +40
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power
P
o
kink free
Threshold Current
I
th
cw
Operation Current
I
op
P
o
= 5 mW
Operating Voltage
V
op
P
o
= 5 mW
Lasing Wavelength
l
p
P
o
= 5 mW
Beam Divergence
P
o
= 5 mW
θ
//
Beam Divergence
P
o
= 5 mW
θ
⊥
Astigmatism
As
P
o
=5mW, NA=0.4
Monitor Current
I
m
P
o
= 5 mW, V
r
=5V
MIN
20
TYP
30
45
2.2
650
8
31
11
10
5
25
MAX
5
40
70
2.7
655
11
37
200
UNIT
mW
mA
mA
V
nm
°
°
µm
µA
