RN1131MFV,RN1132MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1131MFV, RN1132MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
0.5±0.05
0.13±0.05
1.BASE
2.EMITTER
3.COLLECTOR
0.5
0.45
Unit: mm
0.22±0.05
1.2±0.05
0.8±0.05
0.32±0.05
1.2±0.05
0.8±0.05
0.4
0.4
1
2
3
Complementary to RN2131MFV and RN2132MFV
Equivalent Circuit
VESM
Absolute Maximum Ratings
(Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
50
50
5
100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Land Pattern Example
Unit: mm
1.15
0.4
0.45
0.4
0.4
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1
:
Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Note:
Start of commercial production
2005-04
1
2014-03-01
RN1131MFV,RN1132MFV
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1131MFV
RN1132MFV
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.5mA
V
CB
= 10V, I
E
= 0, f = 1MHz
―
Min
―
―
120
―
―
70
140
Typ.
―
―
―
0.1
0.7
100
200
Max
100
100
700
0.3
―
130
260
Unit
nA
nA
―
V
pF
kΩ
2
2014-03-01
RN1131MFV,RN1132MFV
RN1131MFV
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1131MFV
IC - VI(OFF)
COMMON EMITTER
VCE = 0.2V
10
Ta = 100°C
25
-25
1000
-25
25
1
100
Ta = 100°C
COMMON EMITTER
VCE = 5V
10
0
1
2
3
4
5
0.1
0.1
1
10
100
INPUT VOLTAGE
VI(ON) ( V)
INPUT VOLTAGE
VI(OFF) ( V)
RN1132MFV
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1132MFV
IC - VI(OFF)
COMMON EMITTER
VCE = 0.2V
10
Ta = 100°C
25
1
-25
1000
-25
25
100
Ta = 100°C
COMMON EMITTER
VCE = 5V
10
0
2
4
6
8
10
0.1
0.1
1
10
100
INPUT VOLTAGE
VI(ON) ( V)
INPUT VOLTAGE
VI(OFF) ( V)
3
2014-03-01
RN1131MFV,RN1132MFV
RN1131MFV
1000
hFE - IC
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
RN1131MFV
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta = 100°C
COMMON EMITTER
IC/IB = 10
25
100
-25
0.1
Ta = 100°C
-25
25
COMMON EMITTER
VCE = 5V
10
0.1
1
10
100
COLLECTOR CURRENT
IC (mA)
0.01
0.1
1
10
100
COLLECTOR CURRENT
IC (mA)
RN1132MFV
1000
hFE - IC
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
RN1132MFV
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta = 100°C
COMMON EMITTER
IC/IB = 10
25
100
-25
0.1
Ta = 100°C
-25
COMMON EMITTER
VCE = 5V
10
0.1
1
10
100
COLLECTOR CURRENT
IC (mA)
25
0.01
0.1
1
COLLECTOR CURRENT
IC (mA)
10
4
2014-03-01
RN1131MFV,RN1132MFV
Type Name
Marking
RN1131MFV
X3
RN1132MFV
X4
5
2014-03-01
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