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RN1701TE85L

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

器件类别：分立半导体    晶体管   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
Reach Compliance Code
unknow
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
6 pF
集电极-发射极最大电压
50 V
配置
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
30
JESD-30 代码
R-PDSO-G5
元件数量
2
端子数量
5
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
VCEsat-Max
0.3 V
文档预览
RN1701~RN1706
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1701,RN1702,RN1703
RN1704,RN1705,RN1706
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in USV (ultra super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2701 to RN2706
Equivalent Circuit and Bias Resistor Values
Type No.
RN1701
RN1702
RN1703
RN1704
RN1705
RN1706
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
USV
JEDEC
―
JEITA
―
TOSHIBA
2-2L1A
Weight: 6.2mg (typ.)
Equivalent Circuit
(Top View)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1701 to 1706
RN1701 to 1706
RN1701 to 1704
RN1705, 1706
Symbol
V
CBO
V
CEO
V
EBO
I
c
P
c
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1
2010-04-02
RN1701~RN1706
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
RN1701 to 1706
RN1701
RN1702
Emitter cut-off current
RN1703
RN1704
RN1705
RN1706
RN1701
RN1702
DC current gain
RN1703
RN1704
RN1705
RN1706
Collector-emitter
saturation voltage
RN1701 to 1706
RN1701
RN1702
Input voltage (ON)
RN1703
RN1704
RN1705
RN1706
Input voltage (OFF)
Transition frequency
Collector output
capacitance
RN1701 to 1704
RN1705, 1706
RN1701 to 1706
RN1701 to 1706
RN1701
RN1702
Input resistor
RN1703
RN1704
RN1705
RN1706
RN1701 to 1704
Resistor ratio
RN1705
RN1706
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
CE
= 0.2V, I
C
= 5mA
I
C
= 5mA,
I
B
= 0.25mA
V
CE
= 5V, I
C
= 10mA
V
EB
= 5V, I
C
= 0
V
EB
= 10V, I
C
= 0
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
Min
―
―
0.82
0.38
0.17
0.082
0.078
0.074
30
50
70
80
80
80
―
1.1
1.2
1.3
1.5
0.6
0.7
1.0
0.5
―
―
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
―
―
250
3
4.7
10
22
47
2.2
4.7
1.0
Max
100
500
1.52
0.71
0.33
0.15
0.145
0.138
―
―
―
―
―
―
0.3
2.0
2.4
3.0
5.0
1.1
1.3
1.5
0.8
―
6
6.11
13
28.6
61.1
2.86
6.11
1.1
―
kΩ
V
MHz
pF
V
V
―
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2010-04-02
RN1701~RN1706
(Q1, Q2 Common)
3
2010-04-02
RN1701~RN1706
(Q1, Q2 Common)
4
2010-04-02
RN1701~RN1706
(Q1, Q2 Common)
5
2010-04-02
查看更多>
参数对比
与RN1701TE85L相近的元器件有：RN1701(TE85R)、RN1701TE85R、RN1701(TE85L)、RN1701-11。描述及对比如下：
型号 RN1701TE85L RN1701(TE85R) RN1701TE85R RN1701(TE85L) RN1701-11
描述 TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 5 PIN, BIP General Purpose Small Signal
Reach Compliance Code unknow unknow unknown unknown unknown
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTORS
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V
配置 COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 代码 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
元件数量 2 2 2 2 2
端子数量 5 5 5 5 5
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
厂商名称 Toshiba(东芝) - - Toshiba(东芝) Toshiba(东芝)
最小直流电流增益 (hFE) 30 30 30 30 -
最高工作温度 150 °C 150 °C 150 °C 150 °C -
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING -
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz -
包装说明 - SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
针数 - 5 - 5 5
ECCN代码 - EAR99 - EAR99 EAR99
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