RN2107MFV∼RN2109MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107MFV,RN2108MFV,RN2109MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
0.22±0.05
Unit: mm
1.2±0.05
0.8±0.05
0.32±0.05
0.13±0.05
1. BASE
2. EMITTER
3. COLLECTOR
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN1107MFV~RN1109MFV
Lead (Pb) - free
0.5±0.05
1.2±0.05
0.8±0.05
0.4
0.4
1
2
3
Equivalent Circuit and Bias Resistor Values
VESM
Type No.
RN2107MFV
RN2108MFV
RN2109MFV
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
JEITA
TOSHIBA
―
―
2-1L1A
Weight: 0.0015 g (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2107MFV
~RN2109MFV
RN2107MFV
Emitter-base voltage
RN2108MFV
RN2109MFV
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107MFV
~RN2109MFV
I
C
P
C
(Note)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
150
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
0.5
0.45
1.15
0.4
0.45
0.4
0.4
1
2005-03-30
RN2107MFV∼RN2109MFV
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff
current
RN2107MFV~
2109MFV
RN2107MFV
Emitter cutoff current
RN2108MFV
RN2109MFV
RN2107MFV
DC current gain
RN2108MFV
RN2109MFV
Collector-emitter
saturation voltage
RN2107MFV~
2109MFV
RN2107MFV
Input voltage (ON)
RN2108MFV
RN2109MFV
RN2107MFV
Input voltage (OFF)
RN2108MFV
RN2109MFV
Collector output
capacitance
RN2107MFV~
2109MFV
RN2107MFV
Input resistor
RN2108MFV
RN2109MFV
RN2107MFV
Resistor ratio
RN2108MFV
RN2109MFV
R1/R2
―
―
R1
―
―
C
ob
―
V
CB
=
−10
V, I
E
= 0,
f = 1 MH
z
V
I (OFF)
―
V
CE
=
−5
V,
I
C
=
−0.1
mA
V
I (ON)
―
V
CE
=
−0.2
V,
I
C
=
−5
mA
V
CE (sat)
―
I
C
=
−5
mA,
I
B
=
−0.25
mA
h
FE
―
V
CE
=
−5
V,
I
C
=
−10
mA
I
EBO
―
Symbol
I
CBO
I
CEO
Test
Circuit
―
Test Condition
V
CB
=
−50
V, I
E
= 0
V
CE
=
−50
V, I
B
= 0
V
EB
=
−6
V, I
C
= 0
V
EB
=
−7
V, I
C
= 0
V
EB
=
−15
V, I
C
= 0
Min
―
―
−0.081
−0.078
−0.167
80
80
70
―
−0.7
−1.0
−2.2
−0.5
−0.6
−1.5
―
7
15.4
32.9
0.17
0.374
1.71
Typ.
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
0.9
10
22
47
0.213
0.468
2.14
Max
−100
−500
−0.15
−0.145
−0.311
―
―
―
−0.3
−1.8
−2.6
−5.8
−1.0
−1.16
−2.6
―
13
28.6
61.1
0.255
0.562
2.56
―
kΩ
pF
V
V
V
―
mA
Unit
nA
nA
2
2005-03-30
RN2107MFV∼RN2109MFV
RN2107MFV
-100
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
-10000
RN2107MFV
IC - VI (OFF)
-10
Ta = 100°C
COLLECTOR CURRENT IC (µA)
-1000
Ta = 100°C
25
-25
25
-1
-25
EMITTER COMMON
VCE = -0.2V
-0.1
-0.1
-100
EMITTER COMMON
VCE = -5V
-10
-0.2
-1
-10
-100
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE
VI (ON) ( V)
INPUT VOLTAGE
VI (OFF) ( V)
RN2108MFV
-100
IC - VI (ON)
-10000
COLLECTOR CURRENT IC (µA)
RN2108MFV IC - VI (OFF)
EMITTER COMMON
VCE = -5V
COLLECTOR CURRENT IC (mA)
-10
Ta = 100°C
25
-1
-1000
Ta = 100°C
25
-25
-25
EMITTER COMMON
VCE = -0.2V
-100
-0.1
-0.1
-1
-10
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
INPUT VOLTAGE
VI (ON) ( V)
INPUT VOLTAGE
VI (OFF) ( V)
RN219MFV
-100
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
-10000
RN2109MFV
IC - VI (OFF)
COLLECTOR CURRENT IC (µA)
EMITTER COMMON
VCE = -0.2V
-10
EMITTER COMMON
VCE = -5V
-1000
Ta = 100°C
25
-25
Ta = 100°C
-1
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.6
-1
-1.4
-1.8
-2.2
-2.6
-3
INPUT VOLTAGE
VI (ON) ( V)
INPUT VOLTAGE
VI (OFF) ( V)
3
2005-03-30
RN2107MFV∼RN2109MFV
RN2107MFV
1000
hFE - IC
-1
RN2107MFV
VCE(sat) - IC
100
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
DC CURRENT GAIN
hFE
COMMON EMITTER
VCE = -5 V
Ta = 100°C
COMMON EMITTER
IC / IB = 10
-25
25
-0.1
Ta = 100°C
25
-25
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-0.01
-1
-10
COLLECTOR CURRENT
IC
(mA)
-100
RN2108MFV
1000
hFE - IC
-1
RN2108MFV
VCE(sat) - IC
100
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
DC CURRENT GAIN
hFE
COMMON EMITTER
VCE = -5 V
Ta = 100°C
COMMON EMITTER
IC / IB = 10
-25
25
-0.1
Ta = 100°C
25
-25
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-0.01
-1
-10
COLLECTOR CURRENT
IC (mA)
-100
RN2109MFV
1000
hFE- IC
-1
RN2109MFV
VCE(sat) - IC
Ta = 100°C
100
-25
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
VCE = -5 V
DC CURRENT GAIN
hFE
COMMON EMITTER
IC / IB = 10
25
-0.1
Ta = 100°C
-25
25
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-0.01
-1
-10
COLLECTOR CURRENT
IC (mA)
-100
4
2005-03-30
RN2107MFV∼RN2109MFV
Type Name
Marking
RN2107MFV
RN2108MFV
RN2109MFV
5
2005-03-30
工控电子
