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RN2706JE(TPL3)

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

器件类别:分立半导体    晶体管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Toshiba(东芝)
包装说明
,
Reach Compliance Code
unknown
最大集电极电流 (IC)
0.1 A
最小直流电流增益 (hFE)
80
元件数量
2
极性/信道类型
PNP
最大功率耗散 (Abs)
0.1 W
表面贴装
YES
晶体管元件材料
SILICON
文档预览
RN2701JE~RN2706JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2701JE,RN2702JE,RN2703JE
RN2704JE,RN2705JE,RN2706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (5-pin) package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Complementary to RN1701JE~RN1706JE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2701JE
RN2702JE
R2
RN2703JE
RN2704JE
E
RN2705JE
RN2706JE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
JEDEC
JEITA
TOSHIBA
2-2P1D
Weight: 0.003 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2701JE~
2706JE
RN2701JE~
2704JE
RN2705JE,
RN2706JE
Symbol
V
CBO
V
CEO
Rating
−50
−50
−10
V
EBO
−5
I
C
P
C
(Note 1)
T
j
T
stg
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Equivalent Circuit
(top view)
5
Q1
4
Q2
Emitter-base voltage
Collector current
Collector power dissipation RN2701JE~
2706JE
Junction temperature
Storage temperature range
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
RN2701JE~RN2706JE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
RN2701JE~2706JE
RN2701JE
RN2702JE
Emitter cut-off current
RN2703JE
RN2704JE
RN2705JE
RN2706JE
RN2701JE
RN2702JE
DC current gain
RN2703JE
RN2704JE
RN2705JE
RN2706JE
Collector-emitter
saturation voltage
RN2701JE~2706JE
RN2701JE
RN2702JE
Input voltage (ON)
RN2703JE
RN2704JE
RN2705JE
RN2706JE
Input voltage (OFF)
Transition frequency
Collector output
capacitance
RN2701JE~2704JE
RN2705JE, 2706JE
RN2701JE~2706JE
RN2701JE~2706JE
RN2701JE
RN2702JE
Input resistor
RN2703JE
RN2704JE
RN2705JE
RN2706JE
RN2701JE~2704JE
Resistor ratio
RN2705JE
RN2706JE
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
CE
= −5
V,
I
C
= −0.1
mA
V
CE
= −10
V,
I
C
= −5
mA
V
CB
= −10
V, I
E
=
0,
f
=
1 MHz
V
I (ON)
V
CE
= −0.2
V,
I
C
= −5
mA
V
CE (sat)
I
C
= −5
mA,
I
B
= −0.25
mA
h
FE
V
CE
= −5
V,
I
C
= −10
mA
I
EBO
V
EB
= −10
V, I
C
=
0
Symbol
I
CBO
I
CEO
Test Condition
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
Min
−0.82
−0.38
−0.17
−0.082
V
EB
= −5
V, I
C
=
0
−0.078
−0.074
30
50
70
80
80
80
−1.1
−1.2
−1.3
−1.5
−0.6
−0.7
−1.0
−0.5
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
−0.1
200
3
4.7
10
22
47
2.2
4.7
1.0
Max
−100
−500
−1.52
−0.71
−0.33
−0.15
−0.145
−0.138
−0.3
−2.0
−2.4
−3.0
−5.0
−1.1
−1.3
−1.5
−0.8
6
6.11
13
28.6
61.1
2.86
6.11
1.1
V
MHz
pF
V
V
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2007-11-01
RN2701JE~RN2706JE
Q1, Q2 Common
RN2701JE
RN2702JE
RN2703JE
RN2704JE
RN2705JE
RN2706JE
3
2007-11-01
RN2701JE~RN2706JE
Q1, Q2 Common
RN2701JE
RN2702JE
RN2703JE
RN2704JE
(μA)
RN2705JE
(μA)
RN2706JE
4
2007-11-01
RN2701JE~RN2706JE
RN2701JE
RN2702JE
RN2704JE
RN2703JE
RN2705JE
RN2706JE
5
2007-11-01
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