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RN2907TE85R

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

器件类别：分立半导体    晶体管   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
包装说明
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
unknow
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 0.213
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
6 pF
集电极-发射极最大电压
50 V
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
80
JESD-30 代码
R-PDSO-G6
元件数量
2
端子数量
6
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
VCEsat-Max
0.3 V
文档预览
RN2907~RN2909
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2907,RN2908,RN2909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1907~1909
Equivalent Circuit and Bias Resistor Values
Type No.
RN2907
RN2908
RN2909
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
―
JEDEC
―
JEITA
2-2J1A
TOSHIBA
Weight: 6.8 mg(typ.)
Equivalent Circuit
(Top View)
1
2007-11-01
RN2907~RN2909
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2907~2909
RN2907
Emitter-base voltage
RN2908
RN2909
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2907~2909
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
200
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* :
Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off
current
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
I
EBO
―
―
―
h
FE
―
―
V
CE (sat)
―
―
V
I (ON)
―
―
―
V
I (OFF)
―
―
f
T
C
ob
―
―
―
R1
―
―
―
R1/R2
―
―
―
―
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0,
f = 1MHz
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−0.2V,
I
C
=
−5mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−5V,
I
C
=
−10mA
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−6V,
I
C
= 0
V
EB
=
−7V,
I
C
= 0
V
EB
=
−15V,
I
C
= 0
Min
―
―
−0.081
−0.078
−0.167
80
80
70
―
−0.7
−1.0
−2.2
−0.5
−0.6
−1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
200
3
10
22
47
0.213
0.468
2.14
Max
−100
−500
−0.15
−0.145
−0.311
―
―
―
−0.3
−1.8
−2.6
−5.8
−1.0
−1.16
−2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
nA
nA
RN2907~2909
RN2907
Emitter cut-off
current
RN2908
RN2909
RN2907
DC current gain
RN2908
RN2909
Collector-emitter
saturation voltage
RN2907~2909
RN2907
Input voltage (ON)
RN2908
RN2909
RN2907
Input voltage (OFF)
RN2908
RN2909
Translation
frequency
Collector output
capacitance
RN2907~2909
RN2907~2909
RN2907
Input resistor
RN2908
RN2909
RN2907
Resistor ratio
RN2908
RN2909
2
2007-11-01
RN2907~RN2909
(Q1, Q2 Common)
3
2007-11-01
RN2907~RN2909
(Q1, Q2 Common)
4
2007-11-01
RN2907~RN2909
Type Name
Marking
RN2907
RN2908
RN2909
5
2007-11-01
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参数对比
与RN2907TE85R相近的元器件有：RN2907(TE85L)、RN2907TE85L、RN2907TE85N、RN2907(TE85R)。描述及对比如下：
型号 RN2907TE85R RN2907(TE85L) RN2907TE85L RN2907TE85N RN2907(TE85R)
描述 TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
厂商名称 Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknow unknown unknown unknown unknow
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 80 80 80 80
JESD-30 代码 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
元件数量 2 2 2 2 2
端子数量 6 6 6 6 6
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
基于收集器的最大容量 6 pF - 6 pF 6 pF -
最高工作温度 150 °C - 150 °C 150 °C -
VCEsat-Max 0.3 V - 0.3 V 0.3 V -
ECCN代码 - EAR99 - EAR99 EAR99
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