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RN4985AFS

TRANSISTOR 80 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1F1D, FS6, 6 PIN, BIP General Purpose Small Signal

器件类别：分立半导体    晶体管   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Toshiba(东芝)
包装说明
SMALL OUTLINE, R-PDSO-F6
针数
6
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 21.36
最大集电极电流 (IC)
0.08 A
集电极-发射极最大电压
50 V
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
80
JESD-30 代码
R-PDSO-F6
元件数量
2
端子数量
6
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
NPN AND PNP
最大功率耗散 (Abs)
0.05 W
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
RN4985
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4985
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Unit: mm
Equivalent Circuit and Bias Resister Values
R1: 2.2kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
5
100
Unit
V
V
V
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8 mg (typ.)
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
1
2007-11-01
RN4985
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating
Marking
Equivalent Circuit
(Top View)
2
2007-11-01
RN4985
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 0.2V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1 MHz
Min
―
―
0.078
80
―
0.6
0.5
―
―
Typ.
―
―
―
―
0.1
―
―
250
3
Max
100
500
0.145
―
0.3
1.1
0.8
―
6
Unit
nA
mA
―
V
V
V
MHz
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−10mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−0.2V,
I
C
=
−5mA
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
Min
―
―
−0.078
80
―
−0.6
−0.5
―
―
Typ.
―
―
―
―
−0.1
―
―
200
3
Max
−100
−500
−0.145
―
−0.3
−1.1
−0.8
―
6
Unit
nA
mA
―
V
V
V
MHz
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circui
t
―
―
Test Condition
―
―
Min
1.54
Typ.
2.2
Max
2.86
Unit
kΩ
―
0.0421 0.0468 0.0515
3
2007-11-01
RN4985
Q1
4
2007-11-01
RN4985
Q2
5
2007-11-01
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参数对比
与RN4985AFS相近的元器件有：RN4985(TE85R)、RN4985(TE85L)、RN4985FS。描述及对比如下：
型号 RN4985AFS RN4985(TE85R) RN4985(TE85L) RN4985FS
描述 TRANSISTOR 80 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1F1D, FS6, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 50 mA, 20 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1F1D, FS6, 6 PIN, BIP General Purpose Small Signal
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-F6
针数 6 6 6 6
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 0.0468 BUILT-IN BIAS RESISTOR RATIO IS 0.0468 BUILT-IN BIAS RESISTOR RATIO IS 21.36
最大集电极电流 (IC) 0.08 A 0.1 A 0.1 A 0.05 A
集电极-发射极最大电压 50 V 50 V 50 V 20 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 80 80 120
JESD-30 代码 R-PDSO-F6 R-PDSO-G6 R-PDSO-G6 R-PDSO-F6
元件数量 2 2 2 2
端子数量 6 6 6 6
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 FLAT GULL WING GULL WING FLAT
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
厂商名称 Toshiba(东芝) - Toshiba(东芝) Toshiba(东芝)
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器件捷径:
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