RQ7E055AT
Pch -30V -5.5A Middle Power MOSFET
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Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
-30V
27mΩ
±5.5A
1.5W
TSMT8
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Inner circuit
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Features
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
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Absolute maximum ratings
(T
a
= 25°C)
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Application
Type
Switching
Embossed
Tape
180
8
3000
TR
JQ
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D*1
I
D,pulse*2
V
GSS
E
AS*3
I
AS*3
P
D*4
T
j
T
stg
Value
-30
±5.5
±18
±20
22.0
-5.5
1.5
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
℃
℃
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150218 - Rev.002
RQ7E055AT
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
Symbol
R
thJA*4
Values
Min.
-
Typ.
-
Max.
83
Unit
℃
/W
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
-30
-
-
-
-1.0
-
-
-
5.0
Typ.
-
-22
-
-
-
2.9
21
29
-
Max.
-
-
-1
±100
-2.5
-
27
38
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
Δ
V
(BR)DSS
I
D
= -1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
nA
V
mV/
℃
mΩ
I
DSS
I
GSS
V
GS(th)
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
Δ
V
GS(th)
I
D
= -1mA
ΔT
j
referenced to 25
℃
R
DS(on)*5
|Y
fs
|
*5
V
GS
= -10V, I
D
= -5.5A
V
GS
= -4.5V, I
D
= -5.5A
V
DS
= -5V, I
D
= -5.5A
S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L
⋍
1mH, V
DD
= -15V, R
G
= 25Ω, STARTING T
ch
= 25
℃
Fig.3-1,3-2
*4 Mounted on a ceramic boad (30×30×0.8mm)
*5 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150218 - Rev.002
RQ7E055AT
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*5
t
r*5
t
d(off)*5
t
f*5
Conditions
V
GS
= 0V
V
DS
= -15V
f = 1MHz
V
DD
⋍
-15V,V
GS
= -10V
Values
Min.
-
-
-
-
-
-
-
Typ.
940
170
130
9.6
16
55
22
Max.
-
-
-
-
-
-
-
Unit
pF
I
D
= -2.75A
R
L
⋍
5.5Ω
R
G
= 10Ω
ns
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Gate charge characteristics
(T
a
= 25°C)
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*5
Q
gs*5
Q
gd*5
Conditions
V
GS
= -10V
Values
Min.
-
-
-
-
Typ.
20.8
10.4
3.2
4.0
Max.
-
-
-
-
Unit
V
DD
⋍
-15V
I
D
= -5.5A
V
GS
= -4.5V
nC
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Parameter
Symbol
I
S*1
Conditions
Values
Min.
-
Typ.
-
-
-
Max.
-1.25
-18
-1.2
Unit
A
A
V
Body diode continuous
forward current
Body diode
pulse current
Forward voltage
T
a
= 25
℃
I
SP*2
V
SD*5
V
GS
= 0V, I
S
= -1.25A
-
-
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© 2015 ROHM Co., Ltd. All rights reserved.
3/11
20150218 - Rev.002
RQ7E055AT
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2015 ROHM Co., Ltd. All rights reserved.
4/11
20150218 - Rev.002
RQ7E055AT
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20150218 - Rev.002
