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S25FL256SAGNFA013

Flash, 64MX4, PDSO8, WSON-8

器件类别:存储    存储   

厂商名称:Cypress(赛普拉斯)

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器件参数
参数名称
属性值
Objectid
8271961736
包装说明
HVSON,
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
ALSO CONFIGURABLE AS 256M X 1
备用内存宽度
2
启动块
BOTTOM/TOP
最大时钟频率 (fCLK)
133 MHz
JESD-30 代码
R-PDSO-N8
长度
8 mm
内存密度
268435456 bit
内存集成电路类型
FLASH
内存宽度
4
功能数量
1
端子数量
8
字数
67108864 words
字数代码
64000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
64MX4
封装主体材料
PLASTIC/EPOXY
封装代码
HVSON
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行
SERIAL
编程电压
3 V
筛选级别
AEC-Q100
座面最大高度
0.8 mm
最大压摆率
0.1 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
NO LEAD
端子节距
1.27 mm
端子位置
DUAL
类型
NOR TYPE
宽度
6 mm
最长写入周期时间 (tWC)
500 ms
文档预览
S25FL128S/S25FL256S
128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)
3.0V SPI Flash Memory
Features
CMOS 3.0 Volt Core with Versatile I/O
Serial Peripheral Interface (SPI) with Multi-I/O
– SPI Clock polarity and phase modes 0 and 3
– Double Data Rate (DDR) option
– Extended Addressing: 24- or 32-bit address options
– Serial Command set and footprint compatible with
S25FL-A, S25FL-K, and S25FL-P SPI families
– Multi I/O Command set and footprint compatible with
S25FL-P SPI family
READ Commands
– Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad
DDR
– AutoBoot - power up or reset and execute a Normal or
Quad read command automatically at a preselected
address
– Common Flash Interface (CFI) data for configuration
information.
Programming (1.5 Mbytes/s)
– 256 or 512 Byte Page Programming buffer options
– Quad-Input Page Programming (QPP) for slow clock
systems
– Automatic ECC -internal hardware Error Correction Code
generation with single bit error correction
Erase (0.5 to 0.65 Mbytes/s)
– Hybrid sector size option - physical set of thirty two 4-kbyte
sectors at top or bottom of address space with all
remaining sectors of 64 kbytes, for compatibility with prior
generation S25FL devices
– Uniform sector option - always erase 256-kbyte blocks for
software compatibility with higher density and future
devices.
Cycling Endurance
– 100,000 Program-Erase Cycles, minimum
Data Retention
– 20 Year Data Retention, minimum
Security features
– One Time Program (OTP) array of 1024 bytes
– Block Protection:
– Status Register bits to control protection against
program or erase of a contiguous range of sectors.
– Hardware and software control options
– Advanced Sector Protection (ASP)
– Individual sector protection controlled by boot code or
password
Cypress
®
65 nm MirrorBit
®
Technology with Eclipse
Architecture
Core Supply Voltage: 2.7V to 3.6V
I/O Supply Voltage: 1.65V to 3.6V
– SO16 and FBGA packages
Temperature Range / Grade:
– Industrial (-40°C to +85°C)
– Industrial Plus (-40°C to +105°C)
– Automotive AEC-Q100 Grade 3 (-40°C to +85°C)
– Automotive AEC-Q100 Grade 2 (-40°C to +105°C)
– Automotive AEC-Q100 Grade 1 (-40°C to +125°C)
Packages (all Pb-free)
– 16-lead SOIC (300 mil)
– WSON 6 x 8 mm
– BGA-24 6 x 8 mm
– 5 x 5 ball (FAB024) and 4 x 6 ball (FAC024) footprint
options
Cypress Semiconductor Corporation
Document Number: 001-98283 Rev. *N
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 14, 2017
S25FL128S/S25FL256S
– Known Good Die and Known Tested Die
Logic Block Diagram
CS#
SCK
SI/IO0
SO/IO1
I/O
WP#/IO2
HOLD#/IO3
RESET#
Data Path
Control
Logic
X Decoders
SRAM
MirrorBit Array
Y Decoders
Data Latch
Document Number: 001-98283 Rev. *N
Page 2 of 146
S25FL128S/S25FL256S
Performance Summary
Maximum Read Rates with the Same Core and I/O Voltage (V
IO
= V
CC
= 2.7V to 3.6V)
Command
Read
Fast Read
Dual Read
Quad Read
Clock Rate (MHz)
50
133
104
104
Mbytes/s
6.25
16.6
26
52
Maximum Read Rates with Lower I/O Voltage (V
IO
= 1.65V to 2.7V, V
CC
= 2.7V to 3.6V)
Command
Read
Fast Read
Dual Read
Quad Read
Clock Rate (MHz)
50
66
66
66
Mbytes/s
6.25
8.25
16.5
33
Maximum Read Rates DDR (V
IO
= V
CC
= 3V to 3.6V)
Command
Fast Read DDR
Dual Read DDR
Quad Read DDR
Clock Rate (MHz)
80
80
80
Mbytes/s
20
40
80
Typical Program and Erase Rates
Operation
Page Programming (256-byte page buffer - Hybrid Sector Option)
Page Programming (512-byte page buffer - Uniform Sector Option)
4-kbyte Physical Sector Erase (Hybrid Sector Option)
64-kbyte Physical Sector Erase (Hybrid Sector Option)
256-kbyte Logical Sector Erase (Uniform Sector Option)
kbytes/s
1000
1500
30
500
500
Current Consumption
Operation
Serial Read 50 MHz
Serial Read 133 MHz
Quad Read 104 MHz
Quad DDR Read 80 MHz
Program
Erase
Standby
Current (mA)
16 (max)
33 (max)
61 (max)
90 (max)
100 (max)
100 (max)
0.07 (typ)
Document Number: 001-98283 Rev. *N
Page 3 of 146
S25FL128S/S25FL256S
Contents
1.
1.1
1.2
1.3
1.4
2.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.10
2.11
2.12
2.13
2.14
2.15
2.16
3.
3.1
3.2
3.3
3.4
3.5
4.
4.1
4.2
4.3
4.4
4.5
5.
5.1
5.2
5.3
5.4
5.5
6.
6.1
6.2
6.3
6.4
Overview
.......................................................................
General Description .......................................................
Migration Notes..............................................................
Glossary.........................................................................
Other Resources............................................................
4
4
5
7
7
Software Interface
7.
7.1
7.2
7.3
7.4
7.5
8.
8.1
8.2
8.3
8.4
9.
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
9.10
Address Space Maps..................................................
44
Overview....................................................................... 44
Flash Memory Array...................................................... 44
ID-CFI Address Space .................................................. 46
OTP Address Space ..................................................... 46
Registers....................................................................... 48
Data Protection
........................................................... 58
Secure Silicon Region (OTP)........................................ 58
Write Enable Command................................................ 58
Block Protection ............................................................ 59
Advanced Sector Protection ......................................... 60
Commands
.................................................................. 64
Command Set Summary............................................... 65
Identification Commands .............................................. 71
Register Access Commands......................................... 73
Read Memory Array Commands .................................. 84
Program Flash Array Commands ............................... 100
Erase Flash Array Commands.................................... 106
One Time Program Array Commands ........................ 111
Advanced Sector Protection Commands .................... 112
Reset Commands ....................................................... 118
Embedded Algorithm Performance Tables ................. 119
Hardware Interface
Signal Descriptions
..................................................... 8
Input/Output Summary................................................... 8
Address and Data Configuration.................................... 9
RESET# ......................................................................... 9
Serial Clock (SCK) ......................................................... 9
Chip Select (CS#) .......................................................... 9
Serial Input (SI) / IO0 ................................................... 10
Serial Output (SO) / IO1............................................... 10
Write Protect (WP#) / IO2 ............................................ 10
Hold (HOLD#) / IO3 ..................................................... 10
Core Voltage Supply (V
CC
) .......................................... 11
Versatile I/O Power Supply (V
IO
) ................................. 11
Supply and Signal Ground (V
SS
) ................................. 11
Not Connected (NC) .................................................... 11
Reserved for Future Use (RFU)................................... 11
Do Not Use (DNU) ....................................................... 11
Block Diagrams............................................................ 12
Signal Protocols.........................................................
SPI Clock Modes .........................................................
Command Protocol ......................................................
Interface States............................................................
Configuration Register Effects on the Interface ...........
Data Protection ............................................................
Electrical Specifications............................................
Absolute Maximum Ratings .........................................
Thermal Resistance .....................................................
Operating Ranges........................................................
Power-Up and Power-Down ........................................
DC Characteristics .......................................................
Timing Specifications................................................
Key to Switching Waveforms .......................................
AC Test Conditions ......................................................
Reset............................................................................
SDR AC Characteristics...............................................
DDR AC Characteristics ..............................................
Physical Interface
......................................................
SOIC 16-Lead Package ...............................................
WSON Package...........................................................
FAB024 24-Ball BGA Package ....................................
FAC024 24-Ball BGA Package ....................................
13
13
14
18
22
22
23
23
23
23
25
26
28
28
28
29
31
35
37
37
39
40
42
10. Data Integrity
............................................................. 121
10.1 Erase Endurance ........................................................ 121
10.2 Data Retention ............................................................ 121
11. Software Interface Reference
.................................. 122
11.1 Command Summary ................................................... 122
11.2 Device ID and Common Flash Interface
(ID-CFI) Address Map................................................. 124
11.3 Device ID and Common Flash Interface
(ID-CFI) ASO Map — Automotive Only ...................... 137
11.4 Registers..................................................................... 137
11.5 Initial Delivery State .................................................... 140
12.
13.
Ordering Information
................................................ 141
Contacting Cypress
.................................................. 143
14. Revision History........................................................
144
Sales, Solutions, and Legal Information ........................ 148
Worldwide Sales and Design Support ......................... 148
Products ...................................................................... 148
PSoC® Solutions ........................................................ 148
Cypress Developer Community ................................... 148
Technical Support ....................................................... 148
Document Number: 001-98283 Rev. *N
Page 3 of 148
S25FL128S/S25FL256S
1. Overview
1.1
General Description
The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using:
MirrorBit technology - that stores two data bits in each memory array transistor
Eclipse architecture - that dramatically improves program and erase performance
65 nm process lithography
This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and
output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands.
This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for Double Data Rate (DDR)
read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock.
The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to
be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase
algorithms.
Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates
supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,
asynchronous, NOR flash memories while reducing signal count dramatically.
The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety
of embedded applications. They are ideal for code shadowing, XIP, and data storage.
Document Number: 001-98283 Rev. *N
Page 4 of 148
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