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S29CD032J0PFFI010

Flash Memory Nor

器件类别:存储   

厂商名称:Cypress(赛普拉斯)

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器件参数
参数名称
属性值
产品种类
Product Category
Flash Memory
制造商
Manufacturer
Cypress(赛普拉斯)
RoHS
Details
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
FBGA-80
Memory Size
32 Mbit
接口类型
Interface Type
Parallel
Memory Type
NOR
速度
Speed
66 MHz
电源电压-最大
Supply Voltage - Max
2.75 V
电源电压-最小
Supply Voltage - Min
2.5 V
Supply Current - Max
90 mA
工作温度范围
Operating Temperature Range
- 40 C to + 85 C
系列
Packaging
Tray
Architecture
Sector
Data Bus Width
32 bit
Maximum Clock Frequency
66 MHz
最大工作温度
Maximum Operating Temperature
+ 85 C
最小工作温度
Minimum Operating Temperature
- 40 C
Moisture Sensitive
Yes
Organization
1 M x 32
Standard
Common Flash Interface (CFI)
工厂包装数量
Factory Pack Quantity
180
Timing Type
Asynchronous, Synchronous
类型
Type
Boot Block
文档预览
S29CD032J
S29CD016J
S29CL032J
S29CL016J
32/16 Mbit, 2.6/3.3 V, Dual Boot,
Simultaneous Read/Write, Burst Flash
General Description
The Cypress S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single V
CC
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
x32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
– CD016J and CL016J: Eight 2k Double word, Thirty 16k
Double word, and Eight 2k Double Word sectors
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k
Double Word, and Eight 2k Double Word sectors
VersatileI/O™ control (1.65V to 3.6V)
Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with wrap around
Secured Silicon Sector that can be either factory or
customer locked
20 year data retention (typical)
Cycling Endurance: 1 million write cycles per sector (typical)
Command set compatible with JEDEC (JC42.4) standard
Supports Common Flash Interface (CFI)
Extended Temperature range
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase operation
completion
Hardware (WP#) protection of two outermost sectors in the
large bank
Ready/Busy (RY/BY#) output indicates data available to
system
Suspend and Resume commands for Program and Erase
Operation
Offered Packages
– 80-pin PQFP
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)
– Pb-free package option available
– Known Good Die
Cypress Semiconductor Corporation
Document Number: 002-00948 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 08, 2017
S29CD032J
S29CD016J
S29CL032J
S29CL016J
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max Asynch. Access Time, ns (t
ACC
)
Max Synch. Burst Access, ns (t
BACC
)
Min Initial Clock Delay (clock cycles)
Max CE# Access Time, ns (t
CE
)
Max OE# Access time, ns (t
OE
)
75 (32 Mb only)
54
8
5
54
20
66
54
8
5
54
20
56
54
8
5
54
20
40
54
8
4
54
20
Current Consumption (Max values)
Continuous Burst Read @ 75 MHz
Program
Erase
Standby Mode
90 mA
50 mA
50 mA
60 µA
Typical Program and Erase Times
Double Word Programming
Sector Erase
18 µs
1.0 s
Notice for the 32Mb S29CD-J and S29CL-J devices only:
Refer to the application note “Recommended
Mode of Operation for Cypress
®
110 nm S29CD032J/S29CL032J Flash Memory”
publication number
S29CD-CL032J_Recommend_AN
for programming best practices.
Document Number: 002-00948 Rev. *C
Page 2 of 74
S29CD032J
S29CD016J
S29CL032J
S29CL016J
Contents
1.
1.1
2.
3.
4.
5.
5.1
5.2
5.3
5.4
5.5
5.6
6.
6.1
7.
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
8.
8.1
8.2
8.3
8.4
8.5
8.6
9.
9.1
Ordering Information
................................................... 4
Valid Combinations ........................................................ 5
Input/Output Descriptions
and Logic Symbols
...................................................... 6
Block Diagram..............................................................
7
Block Diagram of Simultaneous
Read/Write Circuit........................................................
8
Physical Dimensions/Connection Diagrams.............
9
80-Pin PQFP Connection Diagram ................................ 9
PQR080–80-Lead Plastic Quad Flat
Package Physical Dimensions..................................... 10
80-Ball Fortified BGA Connection Diagram ................. 11
Special Package Handling Instructions........................ 11
LAA080–80-ball Fortified Ball Grid Array
(13 x 11 mm) Physical Dimensions.............................. 12
LAD080–80-ball Fortified Ball Grid Array
(11 x 9 mm) Physical Dimensions................................ 13
Product Overview
...................................................... 14
Memory Map ................................................................ 14
Device Operations
.....................................................
Device Operation Table ...............................................
Asynchronous Read.....................................................
Hardware Reset (RESET#)..........................................
Synchronous (Burst) Read Mode
and Configuration Register ..........................................
Autoselect ....................................................................
VersatileI/O (V
IO
) Control.............................................
Program/Erase Operations ..........................................
Write Operation Status.................................................
Reset Command ..........................................................
Advanced Sector Protection/Unprotection
.............
Advanced Sector Protection Overview ........................
Persistent Protection Bits.............................................
Persistent Protection Bit Lock Bit.................................
Dynamic Protection Bits...............................................
Password Protection Method .......................................
Hardware Data Protection Methods.............................
19
19
20
21
21
26
27
27
32
36
37
38
39
41
41
42
43
9.2
10.
11.
11.1
11.2
11.3
11.4
Secured Silicon Sector Entry
and Exit Commands...................................................... 45
Electronic Marking......................................................
46
Power Conservation Modes.......................................
46
Standby Mode............................................................... 46
Automatic Sleep Mode.................................................. 46
Hardware RESET# Input Operation.............................. 46
Output Disable (OE#).................................................... 46
12. Electrical Specifications.............................................
47
12.1 Absolute Maximum Ratings .......................................... 47
13.
Operating Ranges
....................................................... 48
14. DC Characteristics......................................................
49
14.1 Zero Power Flash.......................................................... 50
15.
Test Conditions
........................................................... 51
16. Test Specifications
..................................................... 51
16.1 Switching Waveforms ................................................... 51
17.
17.1
17.2
17.3
17.4
17.5
17.6
17.7
AC Characteristics......................................................
52
V
CC
and V
IO
Power-up.................................................. 52
Asynchronous Operations............................................. 52
Synchronous Operations .............................................. 54
Hardware Reset (RESET#)........................................... 56
Write Protect (WP#) ...................................................... 57
Erase/Program Operations ........................................... 57
Alternate CE# Controlled
Erase/Program Operations ........................................... 62
17.8 Erase and Programming Performance ......................... 63
17.9 PQFP and Fortified BGA Pin Capacitance ................... 63
18. Appendix 1
.................................................................. 64
18.1 Common Flash Memory Interface (CFI) ....................... 64
19. Appendix 2
.................................................................. 67
19.1 Command Definitions.................................................... 67
20. Revision History..........................................................
69
Sales, Solutions, and Legal Information .......................... 74
Worldwide Sales and Design Support ........................... 74
Products ........................................................................ 74
PSoC® Solutions .......................................................... 74
Cypress Developer Community ..................................... 74
Technical Support ......................................................... 74
Secured Silicon Sector Flash Memory Region
....... 44
Secured Silicon Sector Protection Bit .......................... 45
Document Number: 002-00948 Rev. *C
Page 3 of 74
S29CD032J
S29CD016J
S29CL032J
S29CL016J
1.
Ordering Information
0
J
F
A
I
0
0
0
Packing Type
0 = Tray, FBGA: 180 per tray, min. 10 trays per box
Tray, PQFP: 66 per tray, min. 10 trays per box
2 = 7” Tape and Reel, FBGA: 400 per reel
3 = 13” Tape and Reel, FBGA: 1600 per reel
13” Tape and Reel, PQFP: 500 per reel
Boot Sector Option (16th Character)
0 = Top Boot with Simultaneous Operation
1 = Bottom Boot with Simultaneous Operation
2 = Top Boot without Simultaneous Operation
3 = Bottom Boot without Simultaneous Operation
Autoselect ID Option (15th Character)
0 = 7E, 08, 01/00 Autoselect ID
1 = 7E, 36, 01/00 Autoselect ID
0 = 7E, 46, 01/00 Autoselect ID
0 = 7E, 09, 01/00 Autoselect ID
0 = 7E, 49, 01/00 Autoselect ID
Temperature Range
I = Industrial (–40 °C to +85 °C)
M = Extended (–40 °C to +125 °C)
Material Set
A = Standard
F = Pb-free Option
Package Type
Q = Plastic Quad Flat Package (PQFP)
F = Fortified Ball Grid Array, 1.0 mm pitch package, 13
11 mm package
B = Fortified Ball Grid Array, 1.0 mm pitch package, 11
9 mm package
Clock Frequency (11th Character)
J = 40 MHz
M = 56 MHz
P = 66 MHz
R = 75 MHz
Initial Burst Access Delay (10th Character)
0 = 5-1-1-1, 6-1-1-1, and above
1 = 4-1-1-1 (40 MHz only)
Device Number/Description
S29CD032J/S29CD016J (2.5 volt-only), S29CL032J/S29CL016J (3.3 Volt-only)
32 or 16 Mbit (1M or 512k
32-Bit) CMOS Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Manufactured on 110 nm floating gate technology
The order number (Valid Combination) is formed by the following:
S29CD032J
S29CL032J
S29CD016J only
S29CL016J only
S29CD032J only
S29CL032J only
Document Number: 002-00948 Rev. *C
Page 4 of 74
S29CD032J
S29CD016J
S29CL032J
S29CL016J
1.1
Valid Combinations
Valid Combinations lists configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
S29CD-J/CL-J Valid Combinations
Device
Number
Initial Burst
Access Delay
0, 1
S29CD016J
0
M, P
Clock
Frequency
J
Package
Type
Q
B, F
Q
B, F
Q
B, F
Q
B, F
Q
B, F
Q
B, F
Q
Material
Set
Temperature
Range
Autoselect ID
Option
Boot Sector
Option
Packing
Type
0, 3
0, 2, 3
0, 3
0, 2, 3
0, 3
0, 1
0, 1
S29CL016J
0
J
0, 1, 2, 3
0, 2, 3
0, 3
0, 2, 3
0, 3
0, 2, 3
0, 3
M, P
0, 1
J
M, P
S29CD032J
0
R
A, F
I, M
0, 2, 3
0, 1
(2)
0
2, 3
0, 1
(2)
2, 3
0, 3
B, F
Q
B, F
Q
B, F
Q
R
B, F
0, 2, 3
0, 3
0, 1
J
0, 1, 2, 3
0, 2, 3
0, 3
0, 2, 3
M, P
S29CL032J
0
0, 1
(2)
2, 3
0, 1
(2)
2, 3
0, 3
0, 2, 3
Notes
1. The ordering part number that appears on BGA packages omits the leading “S29”.
2. Contact factory for availability.
Document Number: 002-00948 Rev. *C
Page 5 of 74
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参数对比
与S29CD032J0PFFI010相近的元器件有:S29CD016J0MQFM010、S29CL016J1JQFM030P、S29CL016J0JQFM030、S29CD016J0MQFM030。描述及对比如下:
型号 S29CD032J0PFFI010 S29CD016J0MQFM010 S29CL016J1JQFM030P S29CL016J0JQFM030 S29CD016J0MQFM030
描述 Flash Memory Nor Latches Tri-St Octal D-Type Flash Memory Nor Precision Amplifiers High Voltage Precision Op Amp Flash Memory Nor
产品种类
Product Category
Flash Memory Flash Memory Flash Memory Flash Memory Flash Memory
制造商
Manufacturer
Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
RoHS Details Details Details Details Details
系列
Packaging
Tray Tray Tray Tray Tray
Moisture Sensitive Yes Yes Yes Yes Yes
工厂包装数量
Factory Pack Quantity
180 66 66 66 66
安装风格
Mounting Style
SMD/SMT SMD/SMT - SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
FBGA-80 PQFP-80 - PQFP-80 PQFP-80
Memory Size 32 Mbit 16 Mbit - 16 Mbit 16 Mbit
接口类型
Interface Type
Parallel Parallel - Parallel Parallel
Memory Type NOR NOR - NOR NOR
速度
Speed
66 MHz 56 MHz - 40 MHz 56 MHz
电源电压-最大
Supply Voltage - Max
2.75 V 2.75 V - 3.6 V 2.75 V
电源电压-最小
Supply Voltage - Min
2.5 V 2.5 V - 3 V 2.5 V
Supply Current - Max 90 mA 90 mA - 90 mA 90 mA
工作温度范围
Operating Temperature Range
- 40 C to + 85 C - 40 C to + 125 C - - 40 C to + 125 C - 40 C to + 125 C
Architecture Sector Sector - Sector Sector
Data Bus Width 32 bit 32 bit - 32 bit 32 bit
Maximum Clock Frequency 66 MHz 56 MHz - 40 MHz 56 MHz
最大工作温度
Maximum Operating Temperature
+ 85 C + 125 C - + 125 C + 125 C
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C - - 40 C - 40 C
Organization 1 M x 32 512 k x 32 - 512 k x 32 512 k x 32
Standard Common Flash Interface (CFI) Common Flash Interface (CFI) - Common Flash Interface (CFI) Common Flash Interface (CFI)
Timing Type Asynchronous, Synchronous Asynchronous, Synchronous - Asynchronous, Synchronous Asynchronous, Synchronous
类型
Type
Boot Block Boot Block - Boot Block Boot Block
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